IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
MPN: IAUC120N04S6L012ATMA1 ✓ Hoạt độngIAUC120N04S6L012ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. N-channel enhancement-mode MOSFETs like this one are the dominant switching element in low-voltage synchronous buck converters, half-bridges, and full-bridges. Within the wider taxonomy, this part sits as: N-channel MOSFET → power MOSFET → discrete semiconductor → semiconductor. The OptiMOS 6 family is Infineon's 6th-generation trench-technology platform for ≤40 V and ≤100 V rails, optimised for lower RDS(on) per mm² and lower switching losses versus the prior OptiMOS 5 generation.
Key electrical features include a maximum drain-source voltage VDS of 40 V, a typical on-state resistance RDS(on) of 1.2 mΩ at 10 V VGS, and a continuous drain current ID of 120 A at TC. The device is qualified to AEC-Q101 for automotive use, and the part code suffix 'A' indicates automotive grade. The PG-TDSON-8 footprint with a large exposed drain pad provides a low thermal resistance path, supporting sustained high-current operation on FR-4 PCB substrates when properly laid out with sufficient copper area.
OptiMOS 6 technology uses an advanced split-gate trench structure that reduces both conduction loss (lower RDS(on) per cell) and switching loss (lower gate charge Qg and output capacitance Coss). Compared with the prior OptiMOS 5 generation at the same voltage class, the 1.2 mΩ figure represents a substantial improvement, enabling either higher current density on the same footprint or cooler operation at the same load. This is critical for 12 V automotive systems that must deliver high current in constrained PCB areas.
Typical applications include 12 V automotive ECU power supplies, electric power steering (EPS), battery management system (BMS) protection, DC-DC converter high-side switches, motor drive H-bridges, hot-swap / OR-ing controllers, and industrial 24 V/36 V high-current switching. The automotive-grade qualification makes it suitable for under-the-hood and chassis electronics where ambient temperature can exceed 105 °C.
When designing with this part, prioritise a low-inductance PCB layout: minimise the source-loop and gate-loop area, use multiple vias under the exposed pad for thermal dissipation, and choose a gate driver capable of sourcing/sinking >1 A to switch the Qg quickly. A 10 kΩ gate-source pull-down is recommended to keep the MOSFET off during controller reset.
This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single source for selecting and sourcing the IAUC120N04S6L012ATMA1 for next-generation 12 V automotive and industrial power designs.
Bộ thay thế dễ dàng lắp đặt cho IAUC120N04S6L012ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUC120N04S6L012ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Automotive Qualification, Part Family, MSL Level.
IAUC100N04S6L025ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUC60N04S6N031HATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUC120N06S5L011ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N04S6L012ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 40V |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TC | 120 A |
| Pulsed Drain Current (IDM) | 480 A |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΩ (typ) |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissipation (PD) at TC | 115 W |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C (junction) |
| Hộp | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) |
| Kiểu lắp đặt | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Delivery Form | Tape & Reel |
Cấu hình chân IAUC120N04S6L012ATMA1
| Chân 1 | GATE — Gate control input; drive with 10 V VGS for full enhancement |
| Chân 2 | SOURCE — Source connection (electrically common to thermal pad region) |
| Chân 3 | SOURCE — Source connection (electrically common to thermal pad region) |
| Chân 4 | SOURCE — Source connection (electrically common to thermal pad region) |
| Chân 5 | SOURCE — Source connection (electrically common to thermal pad region) |
| Chân 6 | SOURCE — Source connection (electrically common to thermal pad region) |
| Chân 7 | SOURCE — Source connection (electrically common to thermal pad region) |
| Chân 8 | DRAIN (Exposed Pad) — Drain connection via exposed thermal pad on underside of package |
Khu vực hoạt động an toàn - IAUC120N04S6L012ATMA1
Ứng dụng tiêu biểu
IAUC120N04S6L012ATMA1 phù hợp cho 6 Áp dụngs: Automotive ECU 12 V Power Supply, Electric Power Steering (EPS) H-Bridge, Battery Management System (BMS) Protection Switch, Industrial High-Current DC-DC Converter, Hot-Swap / OR-ing Controller Switch, BLDC Motor Drive Three-Phase Inverter.
Automotive ECU 12 V Power Supply
The IAUC120N04S6L012ATMA1 is well suited to 12 V automotive ECU power supplies where it acts as the high-side or low-side switch in synchronous buck converters feeding microcontrollers and ASIL-rated ICs. Its 1.2 mΩ typical RDS(on) at 10 V VGS limits conduction loss to about 12 W at 100 A load, which keeps the junction temperature rise manageable on a properly laid-out PCB. AEC-Q101 qualification and a 175 °C maximum junction temperature support under-hood ambient conditions up to 105 °C. Compared with a Schottky-diode-based rectifier, a synchronous MOSFET at this RDS(on) dramatically reduces rectifier loss and improves overall efficiency by 4-6 percentage points at full load, helping the ECU meet automotive quiescent-current and efficiency budgets.
Được đề xuất
Electric Power Steering (EPS) H-Bridge
In EPS motor drive H-bridges, the IAUC120N04S6L012ATMA1 serves as the four switching elements that commutate the BLDC motor stator phases. Its 480 A pulsed drain current (IDM) rating comfortably handles the inrush and braking energy of EPS motors, while 1.2 mΩ RDS(on) reduces I²R loss and therefore motor-copper heating. AEC-Q101 qualification is essential for chassis-mounted automotive systems, and the PG-TDSON-8 package's exposed pad allows direct solder attachment to a copper heat-spreader for sustained 100 A+ operation. The OptiMOS 6 generation also offers lower Qg than the prior OptiMOS 5 family, reducing switching loss at the 20 kHz PWM frequencies typical of EPS drives.
Được đề xuất
Battery Management System (BMS) Protection Switch
The IAUC120N04S6L012ATMA1 functions as the high-current charge/discharge MOSFET in a 12 V Li-ion BMS, sitting in series between the battery pack and the load/charger. Its 1.2 mΩ RDS(on) limits the always-on conduction loss in BMS applications that are continuously in the discharge path - a 100 A continuous load dissipates only 12 W. AEC-Q101 qualification satisfies the automotive functional-safety requirements for battery-pack electronics. The 40 V VDS rating provides 2x headroom over a 12 V nominal battery (which can spike to 18 V under load-dump conditions), so a single IAUC120N04S6L012ATMA1 can replace two back-to-back lower-voltage MOSFETs used for reverse-battery protection, halving the footprint.
Được đề xuất
Industrial High-Current DC-DC Converter
In 24 V industrial buck and buck-boost converters, the IAUC120N04S6L012ATMA1 acts as the main switching element, with 40 V VDS providing adequate margin for 24 V nominal rails (which can swing to 36 V during transients). Its 1.2 mΩ RDS(on) enables 50-100 A converter designs with >95 % efficiency, while the 115 W power dissipation rating gives significant thermal headroom for continuous operation. The PG-TDSON-8 package is well supported by standard reflow processes and the part's MSL-1 rating simplifies logistics. Compared with older OptiMOS 3 or OptiMOS 5 designs, the 6th-generation technology cuts switching loss by ~30 %, allowing higher switching frequencies and smaller magnetics.
Được đề xuất
Hot-Swap / OR-ing Controller Switch
The IAUC120N04S6L012ATMA1 is ideal for 12 V server and telecom hot-swap controllers where it must survive inrush surges while dissipating steady-state load current. Its 480 A pulsed drain current (IDM) handles the inrush of large bulk capacitors, and the 1.2 mΩ RDS(on) keeps the steady-state voltage drop below 100 mV at 100 A. OR-ing applications benefit from the low body-diode forward drop characteristic of OptiMOS 6 technology, which reduces shoot-through losses during input-source switchover. AEC-Q101 qualification is overkill for telecom but provides extra margin for industrial and outdoor applications with harsh thermal environments.
Được đề xuất
BLDC Motor Drive Three-Phase Inverter
The IAUC120N04S6L012ATMA1 is well matched to the low-side switches of a three-phase BLDC inverter for industrial motor drives up to 100 A phase current. Its 1.2 mΩ RDS(on) reduces conduction loss in the PWM low-side path, while the OptiMOS 6 generation's low Qg keeps switching loss manageable at 20-50 kHz PWM. The PG-TDSON-8 package enables direct PCB mounting of all six switches in a compact three-phase footprint. For applications requiring both low-side and high-side switches, the part can be paired with a P-channel MOSFET in a half-bridge configuration, though most modern designs prefer all-N-channel bridges for symmetric RDS(on).
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUC120N04S6L012ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUC100N04S6L025ATMA1 | IAUC60N04S6N031HATMA1 | IAUC120N06S5L011ATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| VDS (Drain-Source Voltage) | 40 V | 40 V | 40 V | 60 V (+50%) |
| Continuous Drain Current (ID) at TC | 120 A | 100 A (-17%) | 60 A (-50%) | 120 A (same) |
| Pulsed Drain Current (IDM) | 480 A | 400 A (-17%) | 240 A (-50%) | 480 A (same) |
| RDS(on) typical at 10V VGS | 1.2 mΩ | 2.5 mΩ (+108%) | 3.1 mΩ (+158%) | 1.1 mΩ (slightly lower) |
| Power Dissipation (PD) at TC | 115 W | 100 W | 75 W | 115 W |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Generation / Process | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 |
Bảo phân biệt quan trọng
- Lowest RDS(on) in 40 V OptiMOS 6 120A class (vsIAUC100N04S6L025ATMA1)
- 40 V voltage class optimized for 12 V automotive (vsIAUC120N06S5L011ATMA1)
- OptiMOS 6 generation (newest 40V platform) (vsIAUC120N06S5L011ATMA1 (OptiMOS 5))
Ghi chú thiết kế
Estimated: at ID=100 A continuous with RDS(on)=1.2 mΩ, the steady-state conduction loss is P = I² × R = 100² × 0.0012 = 12 W. The PG-TDSON-8 package has a typical junction-to-ambient thermal resistance of about 50 °C/W on a 1-square-inch 2 oz copper pour, which yields a junction temperature rise of 12 × 50 = 600 °C - well above the 175 °C limit. Therefore the PCB must be designed with at least 3-4 square inches of 2 oz copper on the drain tab, multiple thermal vias to inner-layer copper planes, and ideally an active airflow or a small heatsink. For 50 A continuous, the dissipation drops to 3 W and a 1 sq.in. copper pour is generally sufficient.
Minimise the source-loop and gate-loop inductance by placing the gate-drive components within 5 mm of the gate and source pins. Use a kelvin-source connection if the source pad is shared with the high-current path: route the gate-drive ground return directly to the source pin rather than to the system ground. The exposed drain pad must be soldered to a copper pour that extends at least 5 mm beyond the package edge on all sides, with a via array (0.3 mm drill, 0.6 mm pitch) to inner thermal planes. These layout practices reduce ringing, suppress dv/dt-induced false turn-on, and keep the MOSFET within its SOA.
Do not exceed VGS = ±20 V - even brief overshoots above 20 V can permanently damage the thin gate oxide of OptiMOS 6 parts. Add a 10 kΩ gate-to-source pull-down resistor to keep the MOSFET off during MCU reset or floating-GATE fault conditions. For half-bridge configurations, insert a small (1-5 Ω) gate resistor to damp the gate-drive loop LC resonance, but do not exceed 10 Ω or the switching loss will rise sharply. Finally, do not parallel two IAUC120N04S6L012ATMA1s without matched gate resistors and a shared gate-driver - the very low RDS(on) of 1.2 mΩ means even small VGS mismatch creates severe current imbalance during turn-on.
Thông tin tuân thủ
AEC-Q101 (automotive) qualified per Infineon product page. RoHS and REACH compliant. Lead-free and halogen-free per PG-TDSON-8 package materials declaration. Note: AEC-Q100 nomenclature is sometimes used interchangeably with AEC-Q101 for discrete semiconductors; this part is qualified to AEC-Q101 for discrete MOSFETs.
