IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
MPN: IAUC100N04S6L020ATMA1 ✓ Hoạt độngIAUC100N04S6L020ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used in switching power conversion, motor drive, and load management. The IAUC100N04S6L020 belongs to the OptiMOS 6 family, which sits in the discrete-semiconductor hierarchy: MOSFET -> power transistor -> discrete semiconductor -> semiconductor device. The N-channel variant requires a positive gate-source voltage to conduct and is the dominant choice for low-side switching, high-current synchronous rectification, and OR-ing applications.
Key features of the IAUC100N04S6L020 include a 40 V drain-source breakdown voltage (V<sub>(BR)DSS</sub>) suitable for 12 V and 24 V automotive rails, a maximum R<sub>DS(on)</sub> of 2.04 mΩ at V<sub>GS</sub>=10 V and I<sub>D</sub>=50 A, low gate charge Q<sub>G</sub> for high-frequency switching, and an operating junction temperature range of -55 °C to +175 °C. The leadless SS08 (PG-TDSON-8) package offers a top-side cooling thermal pad that drastically reduces thermal resistance compared with DPAK, allowing 75 W dissipation on a standard JEDEC 1s0p PCB footprint.
The OptiMOS 6 platform improves switching figure-of-merit (R<sub>DS(on)</sub> x Q<sub>g</sub>) over earlier OptiMOS generations, reducing both conduction and switching losses in 40 V automotive systems. The 2 mΩ on-resistance at 100 A means the device dissipates only ~20 W at full rated current, a value that would have required a much larger TO-220 part a decade ago.
Typical applications for this part include 12 V/24 V automotive ECU power switching, electric power steering (EPS) and braking system MOSFETs, BLDC motor drive half-bridges, high-current DC-DC converter synchronous rectifiers, battery management system (BMS) protection switches, and USB-PD / e-fuse load switches. The combination of automotive-grade qualification and SS08 footprint makes it a drop-in upgrade for older OptiMOS 5 designs.
When designing with the IAUC100N04S6L020, ensure the gate drive voltage reaches at least 10 V for full enhancement and use a Kelvin-source connection (pin 4) to avoid R<sub>DS(on)</sub> degradation from source-bond inductance. Keep the source-pad copper pour to at least 100 mm² to achieve the rated 75 W dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and design notes not found on the manufacturer datasheet - including same-brand OptiMOS 6 family variants and cross-brand equivalents that share the PG-TDSON-8 footprint.
Bộ thay thế dễ dàng lắp đặt cho IAUC100N04S6L020ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUC100N04S6L020ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, MSL Level, Part Family.
IAUC100N04S6L014ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUC100N04S6L025ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N04S6L012ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC60N04S6N044ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSZ070N08LS5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IPD70R1K4P7SAUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC100N04S6L020ATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V |
| Continuous Drain Current (Tc) | 100 A |
| Power Dissipation (Tc) | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | 2.04 mΩ |
| RDS(on) Typical | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | 2.0 V |
| Technology | OptiMOS 6 |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C (TJ) |
| Hộp | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| Kiểu lắp đặt | Surface Mount |
| Qualification | Automotive grade |
| Packaging | Tape & Reel (TMA1) |
| Trạng thái RoHS | Compliant |
Cấu hình chân IAUC100N04S6L020ATMA1
| Chân 1 | Source — Power source connection (bonded to thermal pad internally on some variants) |
| Chân 2 | Source — Power source connection |
| Chân 3 | Source — Power source connection |
| Chân 4 | Kelvin Source — Kelvin-source connection for gate-drive return, reduces Ls effect on R<sub>DS(on)</sub> |
| Chân 5 | Gate — Gate input, drive with V<sub>GS</sub>=10 V for full enhancement |
| Chân 6 | Drain — Power drain connection |
| Chân 7 | Drain — Power drain connection |
| Chân 8 | Drain — Power drain connection, bonded to thermal pad on PCB top side |
Ứng dụng tiêu biểu
IAUC100N04S6L020ATMA1 phù hợp cho 6 Áp dụngs: Automotive ECU Power Switching, Electric Power Steering (EPS) and Braking Systems, High-Current DC-DC Synchronous Rectifier, Battery Management System (BMS) Protection Switch, BLDC Motor Drive Half-Bridge, USB-PD and eFuse Load Switch.
Automotive ECU Power Switching
The IAUC100N04S6L020ATMA1's 40 V V<sub>(BR)DSS</sub> and 100 A continuous drain current directly address 12 V and 24 V automotive ECU switching. Its OptiMOS 6 silicon delivers 2.04 mΩ max R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, keeping conduction losses under 20 W at full rated current - small enough to dissipate on the PG-TDSON-8's top-side thermal pad without a heatsink. The AEC-Q101 automotive qualification, -55 to +175 °C junction range and load-dump transient capability make it a robust high-side/low-side switch for body control modules and lighting ECUs, where it is typically driven by a TPS1H100-Q1 or BTS50080-1TEA gate driver from a 5 V logic-level PWM input.
Được đề xuất
Electric Power Steering (EPS) and Braking Systems
In EPS and ABS/ESC power blocks the IAUC100N04S6L020ATMA1 forms the high-current half-bridge switches that drive the BLDC motor stator windings. Its 100 A continuous drain current handles peak transient currents seen during parking maneuvers, while the 2 mΩ R<sub>DS(on)</sub> minimizes I²R losses in the high-current path - critical for system efficiency and thermal budget. The PG-TDSON-8 footprint allows top-side cooling via the exposed pad, and the automotive qualification ensures compliance with ISO 26262 functional-safety analysis requirements.
Được đề xuất
High-Current DC-DC Synchronous Rectifier
The IAUC100N04S6L020ATMA1 is an excellent synchronous rectifier for 12 V to 1 V/3.3 V buck converters in server, telecom and automotive point-of-load applications. Its 2.04 mΩ R<sub>DS(on)</sub> and low Q<sub>G</sub> of the OptiMOS 6 platform minimize both conduction and switching losses at 200 kHz - 1 MHz switching frequencies, achieving peak efficiencies above 95%. The PG-TDSON-8 package allows direct top-side cooling on a 100 mm² copper pour, and the 40 V V<sub>(BR)DSS</sub> provides adequate margin above 24 V input transients with proper snubbing.
Được đề xuất
Battery Management System (BMS) Protection Switch
As a high-side disconnect switch in 12 V and 48 V mild-hybrid BMS systems, the IAUC100N04S6L020ATMA1's 100 A continuous rating and 2 mΩ R<sub>DS(on)</sub> minimize both voltage drop and heat generation during normal operation. The OptiMOS 6 cell provides robust avalanche energy (E<sub>AS</sub>) and short-circuit withstand, critical for handling inrush currents during pre-charge and load-dump transients. The PG-TDSON-8 footprint allows compact PCB layout alongside current-sense shunts, and the automotive qualification meets the reliability demands of battery-pack applications.
Được đề xuất
BLDC Motor Drive Half-Bridge
For industrial and automotive BLDC motor drives (HVAC blowers, water pumps, e-bikes), the IAUC100N04S6L020ATMA1 serves as the low-side or high-side switch in a 3-phase inverter topology. Its 100 A continuous and 2 mΩ R<sub>DS(on)</sub> sustain PWM switching at 20-50 kHz while keeping the thermal envelope manageable on a standard 4-layer PCB. The PG-TDSON-8 footprint enables a compact 6-MOSFET inverter on a footprint under 25 mm x 25 mm, and pairing the part with IRS2008STRPBF or IR21271STRPBF gate drivers yields a robust, automotive-grade solution.
Được đề xuất
USB-PD and eFuse Load Switch
In USB-PD 3.1 EPR (140 W) and high-current eFuse applications the IAUC100N04S6L020ATMA1 acts as the high-side protection switch in 12 V/24 V systems. Its 2.04 mΩ R<sub>DS(on)</sub> keeps conduction loss under 0.2 W at 10 A continuous load - small enough to avoid thermal shutdown without a heatsink - and the 40 V V<sub>(BR)DSS</sub> withstands load-dump transients on automotive 12 V rails. The device's fast switching speed, controlled by a BTS4141NHUMA1 or BTS70012-1ESP high-side driver, enables sub-millisecond overcurrent and reverse-current protection.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUC100N04S6L020ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUC100N04S6L014ATMA1 | IAUC100N04S6L025ATMA1 | IAUC120N04S6L012ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (Tc) | 100 A | 100 A | 100 A | 120 A | 60 A |
| RDS(on) max @ VGS=10V | 2.04 mΩ | 1.4 mΩ | 2.5 mΩ | 1.2 mΩ | 4.4 mΩ |
| Technology | OptiMOS 6 40V | OptiMOS 6 40V | OptiMOS 6 40V | OptiMOS 6 40V | OptiMOS 6 40V |
| Automotive Qualified | Yes | Yes | Yes | Yes | Yes |
| Power Dissipation (Tc) | 75 W | 75 W (similar) | 75 W (similar) | 100 W | 50 W |
| Price (qty-1, USD) | 1.95 | ~2.40 | ~1.65 | ~2.80 | ~1.10 |
Bảo phân biệt quan trọng
- Lowest R_DS(on) at V_GS=10V in 5x6 mm SS08 package for 40 V class (vsIAUC100N04S6L025ATMA1)
- 100 A continuous drain current rating (vsIAUC60N04S6N044ATMA1)
- AEC-Q101 automotive qualification with OptiMOS 6 robustness (vsIAUC120N04S6L012ATMA1)
- Kelvin-source pin (pin 4) for cleaner gate drive (vsIPD70R1K4P7SAUMA1 (different voltage class))
Ghi chú thiết kế
Estimated: at I_D=100A and R_DS(on)=2.04 mΩ, conduction loss = I²R = 100² × 0.00204 = 20.4 W. The PG-TDSON-8 (SS08) package achieves a θ_JC of approximately 2.0 °C/W, so junction temperature rise above case = 20.4 × 2.0 = ~41 °C. Keep the case below 135 °C to maintain junction under 175 °C, which requires mounting on at least 100 mm² of top-side copper pour on a 1-oz 4-layer PCB.
Use the Kelvin-source pin (pin 4) as the gate-drive return path rather than bonding it to the power source. This eliminates source-inductance-induced R_DS(on) degradation during fast switching transitions (e.g., 50 V/ns). Place the gate driver within 5 mm of pins 4 and 5, and use a 10 Ω gate resistor to dampen ringing without slowing switching excessively.
Do not exceed V_GS=±20 V (even briefly) - the thin gate oxide of the OptiMOS 6 platform is not as robust as older OptiMOS generations. Use a gate-clamp TVS or a gate-driver with integrated V_GS clamping. Also, do not assume the source pins (1-3) and the thermal pad are internally bonded; the datasheet symbol shows them as separate for Kelvin-source flexibility - always check the specific variant's internal connection.
Keep the high-current loop (drain-source) area below 50 mm² to minimize parasitic inductance that can overshoot V_DS above 40 V during turn-off. Use 4-layer PCB with 2-oz top-side copper for the source/drain pads and a solid ground plane on layer 2 for return current. Place gate-loop components on the opposite side of the chip from the power loop.
Estimated: at 200 kHz switching with 100 A load, the dV/dt on the drain node can exceed 10 V/ns, radiating EMI in the 30-300 MHz band. Add a small RC snubber (e.g., 10 Ω + 1 nF) across drain-source if EMI fails CISPR 25 Class 5 testing in automotive applications.
Thông tin tuân thủ
AEC-Q101 automotive qualified per Infineon OptiMOS 6 family specifications. RoHS and REACH compliant. Lead-free and halogen-free per the TMA1 suffix designation.
