IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon
MPN: IPD90N06S407ATMA2 ✓ Hoạt độngIPD90N06S407ATMA2 Tóm tắt
What is an N-channel power MOSFET? An N-channel power MOSFET is a voltage-controlled majority-carrier switch whose conduction between drain and source is modulated by the gate-to-source voltage. It belongs to the discrete-semiconductor hierarchy: power MOSFET -> MOSFET -> transistor -> discrete semiconductor. Because the majority carrier is the electron, N-channel devices typically achieve lower R_DS(on) per unit silicon area than equivalent P-channel MOSFETs, which is why the IPD90N06S407ATMA2 can deliver 90 A with only 6.9 mOhm on-state loss. The OptiMOS family that this part belongs to is optimised for low R_DS(on) and high-current switching.
Key features include 100% avalanche-tested ruggedness, AEC-Q101 automotive qualification, MSL1 moisture sensitivity up to 260 C peak reflow, and an operating junction-temperature range of -55 C to +175 C. The standard gate-threshold of 4 V at 40 uA simplifies logic-level driving, and the +20 V absolute maximum V_GS rating protects against typical gate-driver transients. RoHS-compliant Green-Product construction supports automotive and industrial designs subject to REACH and conflict-mineral reporting.
The device uses Infineon's advanced trench-cell architecture, which minimises cell pitch while maximising channel width per die area. The 56 nC typical Q_G at 10 V indicates a moderate gate-charge budget, allowing switching frequencies of 100 kHz to 500 kHz in SMPS and motor-drive applications without exceeding the gate-driver's source/sink current capability. Ultra-low R_DS(on) at 60 V reduces conduction loss in high-current loops.
Typical applications include automotive 12 V/24 V high-current switching, H-bridge motor drivers, DC-DC converter synchronous-rectifier stages, electronic power-steering (EPS) and braking systems, and industrial solenoid/relay drivers. The combination of high current, low on-resistance and AEC-Q101 qualification makes it well suited to body-electronics and chassis ECUs.
When designing with this part, ensure the drain tab/PCB copper area is sized for the 79 W thermal budget (R_thJC low, but R_thJA depends on PCB footprint) and that the gate-drive voltage reaches 10 V for full R_DS(on) enhancement. A gate-source resistor of 10 kOhm to 100 kOhm prevents floating-gate turn-on during high dV/dt transients.
This page synthesises distributor pricing as of 2026-09-13, drop-in alternatives in the same DPAK footprint, and practical design notes that complement the manufacturer datasheet for cross-brand selection and BOM-risk mitigation.
Bộ thay thế dễ dàng lắp đặt cho IPD90N06S407ATMA2 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPD90N06S407ATMA2 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
IPD90N06S4-07
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD048N06N3GATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD048N06L3GBTMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD33CN10NGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD200N15N3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD60R225C7ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD90N06S407ATMA2 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | 60 V |
| Continuous Drain Current (I_D at T_C) | 90 A |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | 6.9 mOhm |
| Gate Threshold Voltage (V_GS(th)) | 4 V at 40 uA |
| Total Gate Charge (Q_G) at V_GS=10 V | 56 nC |
| Maximum Power Dissipation (P_D at T_C) | 79 W |
| Nhiệt độ mối nối hoạt động | -55 C to +175 C |
| Hộp | PG-TO252-3-11 (DPAK) |
| Kiểu lắp đặt | Surface Mount |
| Lead-Free / RoHS | Yes (Green Product) |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) |
| Automotive Qualification | AEC-Q101 Qualified |
| Avalanche Rating | 100% Avalanche Tested |
Cấu hình chân IPD90N06S407ATMA2
| Chân 1 | Gate — Gate drive input; drive to 10 V for full enhancement to 6.9 mOhm R_DS(on) |
| Chân 2 | Drain — Drain terminal; internally connected to the mounting tab for thermal dissipation |
| Chân 3 | Source — Source terminal; connect 10 kOhm gate-source resistor here to prevent false turn-on |
Khu vực hoạt động an toàn (DC, T_C=25 C)
Ứng dụng tiêu biểu
IPD90N06S407ATMA2 phù hợp cho 6 Áp dụngs: Automotive 12 V/24 V High-Current Load Switch, H-Bridge DC Motor Driver (Half-Bridge Switch), Synchronous-Rectifier Stage in DC-DC Converter, Electronic Power-Steering (EPS) and Braking System, Industrial Solenoid and Relay Driver, Battery Protection and Hot-Swap in 12 V-24 V Systems.
Automotive 12 V/24 V High-Current Load Switch
The IPD90N06S407ATMA2's 90 A continuous drain current and 6.9 mOhm R_DS(on) at V_GS=10 V make it ideal for automotive body-electronic load switches driving headlamps, PTC heaters, and high-current solenoids. With 60 V V_DS it tolerates 24 V load-dump transients (per ISO 7637-2) with adequate margin. The AEC-Q101 qualification and -55 C to +175 C junction-temperature rating let it sit in the engine bay or chassis harness. Placed between battery feed and the load with a 10 V gate drive from a body-control MCU, it dissipates roughly 6.9 mOhm x I_load^2 - for a 30 A headlamp that is only 6.2 W of conduction loss, far below the 79 W thermal budget.
Được đề xuất
H-Bridge DC Motor Driver (Half-Bridge Switch)
As a low-side or high-side switch in a 12 V-24 V brushed-DC H-bridge driving seat-position, window, or wiper motors, the IPD90N06S407ATMA2 handles motor inrush and stall currents up to 90 A with 6.9 mOhm conduction loss. The 56 nC Q_G at V_GS=10 V is compatible with 1 A gate drivers at PWM frequencies up to 20 kHz. Its 100% avalanche-tested ruggedness absorbs the inductive kickback when PWM duty cycle commutates the motor winding. Mounted on the DPAK tab with 1 sq-in copper pour, R_thJA is sufficient for continuous 30 A switching without external heatsinking.
Được đề xuất
Synchronous-Rectifier Stage in DC-DC Converter
In a 12 V-to-3.3 V/5 V buck converter's synchronous-rectifier position, the IPD90N06S407ATMA2's 6.9 mOhm R_DS(on) and 56 nC Q_G minimise both conduction and switching losses. The 60 V V_DS rating handles 12 V-input transients with substantial margin, and AEC-Q101 qualification suits automotive POL converters. Operating at 100-300 kHz with a 1 A gate driver, dead-time body-diode conduction is short. Compared to a Schottky diode at 30 A output, the synchronous-rectifier MOSFET saves 1.2 W of rectification loss while reducing PCB temperature rise.
Được đề xuất
Electronic Power-Steering (EPS) and Braking System
The IPD90N06S407ATMA2's AEC-Q101 qualification and 175 C junction-temperature rating suit safety-critical chassis applications such as EPS motor drives and electronic stability-control (ESC) hydraulic-valve switches. Its 90 A current rating covers peak torque demands of EPS brushless motors, while the 60 V V_DS tolerates 24 V truck/lorry platforms. The 100% avalanche rating absorbs the regenerative braking energy when the motor returns current to the bus. This part is also pin-compatible with other Infineon 60 V DPAK MOSFETs for sourcing flexibility.
Được đề xuất
Industrial Solenoid and Relay Driver
Industrial solenoid valves, hydraulic actuators, and high-inrush relay coils draw 10-50 A inrush that the IPD90N06S407ATMA2 can switch directly with its 90 A pulsed-current capability and 6.9 mOhm R_DS(on). The 60 V V_DS handles 24 V and 48 V industrial bus rails with adequate margin, and the 175 C junction rating supports enclosed industrial cabinets. Drive the gate with 10 V from a PLC or industrial MCU, with a 10 kOhm gate-source resistor to prevent false turn-on from dV/dt on the drain. The DPAK package allows compact PCB layouts in DIN-rail PLC modules.
Được đề xuất
Battery Protection and Hot-Swap in 12 V-24 V Systems
In battery-management and hot-swap-inrush-control circuits for 12 V or 24 V battery packs, the IPD90N06S407ATMA2 serves as the disconnect switch or inrush limiter. Its 60 V V_DS handles the battery voltage plus transient ringing, and the 6.9 mOhm R_DS(on) keeps conduction loss under 5 W even at full 90 A load. AEC-Q101 qualification makes it suitable for e-bike and light-EV battery packs where automotive-grade reliability is expected. Use a low-side N-channel configuration with a charge-pump gate driver for full enhancement.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPD90N06S407ATMA2 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPD90N06S4-07 | IPD048N06N3GATMA1 | IPD048N06L3GBTMA1 | IPD33CN10NGATMA1 | IPD200N15N3GATMA1 | IPD60R225C7ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| V_DS Max | 60 V | 60 V | 60 V | 60 V | 100 V | 150 V | 600 V |
| Continuous Drain Current | 90 A | 90 A | 50 A | 50 A | 33 A | 50 A | 14 A |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Bảo phân biệt quan trọng
- Highest current capability in DPAK at 60 V (90 A continuous) (vsIPD048N06N3GATMA1)
- 100% Avalanche-tested ruggedness for unclamped inductive switching (vsIPD200N15N3GATMA1)
- AEC-Q101 automotive qualification with MSL1 to 260 C (vsIPD048N06L3GBTMA1)
Ghi chú thiết kế
Estimated: At 90 A continuous load, the IPD90N06S407ATMA2 dissipates P = I^2 x R_DS(on) = 90^2 x 6.9 mOhm = 56 W when fully enhanced at V_GS=10 V. The DPAK PG-TO252-3-11 tab should be soldered to a copper pour of at least 1 sq-in (645 sq-mm) on the top layer for thermal dissipation; additional inner-layer copper connected via thermal vias further reduces R_thJA. Without adequate copper area, the junction will exceed 175 C and trigger thermal shutdown. In pulsed motor or solenoid applications, calculate the RMS current to estimate average dissipation rather than peak current.
Recommended: Follow IPC-7352 DPAK land-pattern guidelines when designing the PCB footprint - the drain pad must accommodate the tab plus 0.5 mm of solder fillet on each side. Place a 10 kOhm gate-source resistor (R_GS) directly between the gate and source pins on the PCB to prevent floating-gate turn-on during high dV/dt transients. Route the gate trace away from the drain switching node to minimise parasitic Miller coupling, and use a Kelvin source connection when the source-current path is shared with the gate-drive return.
Critical: (1) Driving the gate with only 5 V logic-level signal will leave the MOSFET in partial enhancement, increasing R_DS(on) by 3-5x and causing thermal failure - always drive V_GS to 10 V for full enhancement. (2) The absolute maximum V_GS is +/-20 V; exceeding this destroys the gate oxide. (3) For unclamped inductive switching (relay coils, solenoids), add a freewheeling diode or TVS clamp because the 60 V V_DS rating can be exceeded by L x dI/dt transients. (4) Do not connect the drain tab to the drain trace only - it must be soldered to a copper pour for thermal and electrical performance.
Thông tin tuân thủ
AEC-Q101 automotive-qualified per Infineon datasheet. MSL1 to 260 C peak reflow. Green-Product (RoHS-compliant) construction. Halogen-free per Infineon product family declarations. Lead-free finish (NiPdAu or matte-tin).
