IAUCN04S7L014ATMA1 - 40V 120A OptiMOS N-MOSFET | Infineon
MPN: IAUCN04S7L014ATMA1 ✓ Hoạt độngIAUCN04S7L014ATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses a gate signal to modulate conduction between source and drain. MOSFETs sit within the broader semiconductor hierarchy of transistors, and the IAUCN04S7L014 belongs to Infineon's OptiMOS 5 40 V automotive family - one of several generations optimized for progressively lower on-state resistance and gate charge. Low R<sub>DS(on)</sub> reduces conduction losses, which is critical for energy efficiency in battery-powered and high-current automotive loads.
Key features of this part include 1.43 mΩ typical R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, a 40 V drain-source breakdown voltage suitable for 12 V and 24 V automotive rails, and a 120 A continuous drain current rating. The PG-TDSON-8-34 (TDSON EP) package exposes the drain pad to the PCB for direct thermal coupling, enabling high power dissipation without external heatsinks in compact motor-drive modules. The device is qualified to AEC-Q101 for automotive reliability.
The architecture uses Infineon's OptiMOS trench technology with a low-figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) to minimize switching losses at high frequency. The 8-pin TDSON EP package combines small outline with low package parasitics, allowing fast switching edges and clean gate drive. Combined with the AEC-Q101 qualification, this makes the device suitable for safety-relevant automotive electronics where thermal cycling, vibration, and lifetime reliability are mandatory.
Typical applications for this part include BLDC motor drives for electric water pumps, oil pumps, and cooling fans, 12 V and 24 V automotive load switching such as solenoid and relay replacement, electric power steering (EPS) systems, and high-current DC-DC converter primary switches. The 1.43 mΩ R<sub>DS(on)</sub> is particularly important in motor-drive half-bridges where conduction losses directly affect efficiency and thermal rise.
When designing with this part, keep the gate-drive voltage above 10 V to fully enhance the channel and achieve the rated R<sub>DS(on)</sub>. Use Kelvin-source connection if available to suppress gate-loop inductance, and minimize the source-to-ground parasitic inductance on the PCB. The exposed pad (EP) must be soldered to a sufficient copper area - typically 1 oz copper over at least 1 cm² - to keep junction temperature within safe limits under continuous high-current operation.
Bộ thay thế dễ dàng lắp đặt cho IAUCN04S7L014ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUCN04S7L014ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Mounting Type, MSL Level, Automotive Qualification, Operating Temperature Range.
IAUCN04S7N037GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7L050HATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N015GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC019N04LSTATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPC100N04S5L1R5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7L014ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 40V Automotive |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 120 A |
| On-Resistance RDS(on) Max | 1.43 mΩ |
| Khoảng nhiệt độ hoạt động | -55°C to +175°C (typical automotive MOSFET range) |
| Hộp | PG-TDSON-8-34 (TDSON EP, 8-pin) |
| Kiểu lắp đặt | Surface Mount |
| Qualification | AEC-Q101 (Automotive) |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Configuration | Single N-Channel MOSFET |
Cấu hình chân IAUCN04S7L014ATMA1
| Chân 1 | Source — Source connection (low-side return path) |
| Chân 2 | Source — Source connection |
| Chân 3 | Source — Source connection |
| Chân 4 | Source — Source connection |
| Chân 5 | Source — Source connection |
| Chân 6 | Gate — Gate drive input |
| Chân 7 | Source — Source connection |
| Chân 8 | Source — Source connection |
| Chân EP | Drain — Exposed pad - drain terminal, also serves as thermal dissipation path |
Khu vực hoạt động an toàn - PG-TDSON-8-34
Ứng dụng tiêu biểu
IAUCN04S7L014ATMA1 phù hợp cho 6 Áp dụngs: BLDC Motor Drive for Automotive Water/Oil Pumps, Electric Power Steering (EPS) Systems, 12V/24V High-Current Load Switching, Automotive DC-DC Converter Primary Switch, Battery Management System (BMS) Protection Switch, Industrial 24V Brushless DC Motor Drive.
BLDC Motor Drive for Automotive Water/Oil Pumps
The IAUCN04S7L014ATMA1 fits BLDC motor drives for automotive water pumps and oil pumps because of its 1.43 mΩ maximum on-resistance and 120 A continuous drain current, both of which directly minimize conduction losses in the half-bridge switching leg. The 40 V drain-source rating comfortably covers 12 V board-net transients up to ~35 V during load-dump. AEC-Q101 qualification is mandatory for under-houd automotive loads. The TDSON-8-34 package's exposed drain pad enables PCB-side cooling without an external heatsink. Compared with a relay, the MOSFET provides silent, fast PWM commutation at 25-50 kHz for variable-speed pump control.
Được đề xuất
Electric Power Steering (EPS) Systems
The IAUCN04S7L014ATMA1 suits EPS three-phase inverter stages because its 1.43 mΩ R<sub>DS(on)</sub> keeps I²R losses low at the 60-100 A phase currents typical of column-assist EPS systems. The 40 V VDS rating absorbs 12 V back-EMFA transients during regenerative braking. AEC-Q101 qualification and -55°C to +175°C operating range are required for under-houd reliability. The PG-TDSON-8-34's low package inductance keeps switching edges clean at 20 kHz PWM, reducing EMI that would otherwise complicate ISO 11452-2 compliance.
Được đề xuất
12V/24V High-Current Load Switching
The IAUCN04S7L014ATMA1 serves as a high-side or low-side switch for 12 V/24 V automotive loads such as seat heaters, defrosters, and DC-DC converter primary switches where its 1.43 mΩ R<sub>DS(on)</sub> minimizes voltage drop and dissipation at 30-100 A continuous currents. The 40 V VDS rating tolerates 24 V board-net transients up to ~35 V. AEC-Q101 and TDSON-8-34's exposed pad enable compact, automotive-grade designs without bulky heatsinks, while the 120 A ID rating provides 2x+ headroom over typical peak loads for thermal margin.
Được đề xuất
Automotive DC-DC Converter Primary Switch
The IAUCN04S7L014ATMA1 works as a primary-side switch in 12 V to 48 V bidirectional DC-DC converters where 40 V VDS comfortably covers 12 V input and 1.43 mΩ R<sub>DS(on)</sub> keeps conduction loss low at the 80-120 A primary currents typical of mild-hybrid vehicles. AEC-Q101 qualification is required for automotive power conversion. The low Qg reduces gate-drive losses at 100-200 kHz switching, and the TDSON-8-34 footprint allows direct PCB cooling through the exposed drain pad.
Được đề xuất
Battery Management System (BMS) Protection Switch
The IAUCN04S7L014ATMA1 acts as a 12 V/24 V battery pack protection or pre-charge switch where its 120 A continuous current and 40 V VDS safely interrupt full load and short-circuit events. The 1.43 mΩ R<sub>DS(on)</sub> minimizes steady-state conduction loss during normal operation. AEC-Q101 qualification makes the device acceptable for automotive BMS reference designs, and the TDSON-8-34 footprint allows compact integration next to shunt current sensors.
Được đề xuất
Industrial 24V Brushless DC Motor Drive
The IAUCN04S7L014ATMA1 is suitable for industrial 24 V BLDC drives (pumps, fans, small servo motors) because 40 V VDS tolerates 24 V nominal plus inductive spikes and 120 A continuous current supports motors up to several hundred watts. The 1.43 mΩ R<sub>DS(on)</sub> keeps conduction loss low at high duty cycles. While AEC-Q101 is over-spec for industrial, the part's rugged trench technology and exposed-pad TDSON-8-34 package provide long-life thermal performance in factory-floor equipment running 24/7.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUCN04S7L014ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUCN04S7N037GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N015GATMA1 | BSC019N04LSTATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8-34 (TDSON EP) - same | PG-TDSON-8-34 (TDSON EP) - same | PG-TDSON-8-34 (TDSON EP) - same | PG-TDSON-8 (TDSON EP) - same family | PG-TDSON-8-34 (TDSON EP) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID) | 120 A | 120 A | 120 A | 120 A | 100 A | 120 A |
| On-Resistance RDS(on) Max | 1.43 mΩ | 3.7 mΩ | 5.0 mΩ | 1.5 mΩ | 1.9 mΩ | 1.5 mΩ |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | No (industrial) | Yes |
| Process / Family | OptiMOS 5 40V Automotive | OptiMOS 5 40V Automotive | OptiMOS 5 40V Automotive | OptiMOS 5 40V Automotive | OptiMOS (industrial) | OptiMOS 5 40V Automotive |
Bảo phân biệt quan trọng
- Lower RDS(on) for higher efficiency in high-current motor phases (vsBSC019N04LSTATMA1)
- Tighter RDS(on) within the same OptiMOS 5 40V family (vsIAUCN04S7N037GATMA1)
- Full automotive qualification (vsBSC019N04LSTATMA1)
Ghi chú thiết kế
Estimated: at continuous 120 A load and 1.43 mΩ RDS(on), conduction dissipation is approximately 120² × 0.00143 ≈ 20.6 W. The PG-TDSON-8-34's exposed drain pad must be soldered to a PCB copper area of at least 1 cm² (1 oz copper) to keep junction temperature rise within safe limits; 2-4 cm² is recommended for continuous full-load operation. Use multiple thermal vias under the exposed pad to conduct heat into inner PCB copper planes.
Place the gate-drive return path (Kelvin source connection) directly between the gate-driver ground and the source pin closest to the gate. Minimize source-loop inductance to prevent gate-voltage ringing that could exceed VGS(max). Use a 10 Ω gate resistor with 4.7 nF of gate-source capacitance for damping. Keep the gate trace short and away from the drain switching node to avoid dv/dt-induced turn-on.
Do not operate the gate below the threshold voltage in the linear region - keep VGS at least 10 V for full enhancement into the rated 1.43 mΩ RDS(on). Do not exceed 40 V VDS or 120 A ID, and respect the SOA envelope in pulsed applications. Ensure AEC-Q101 variants are used for automotive designs; do not substitute non-automotive MOSFETs in safety-relevant loads.
Thông tin tuân thủ
AEC-Q101 qualified per Arrow.com listing. RoHS compliant per Infineon product page. Lead-free and halogen-free per automotive-grade OptiMOS 5 datasheet family standard.
