IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon
MPN: IPB072N15N3GATMA1 ✓ Hoạt độngIPB072N15N3GATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device (gate, drain, source) that switches or amplifies power in the kilo- to megahertz range. Within the power-converter hierarchy it sits between the controller IC and the magnetic components; specifically IPB072N15N3GATMA1 belongs to the N-channel enhancement-mode family of trench-gate MOSFETs, descendants of the original planar DMOS, and is engineered to minimize conduction loss (low R_DS(on)) and switching loss (low Q_g, Q_rr) simultaneously. OptiMOS is Infineon's flagship low-voltage-to-high-voltage power-MOSFET platform, competing with Vishay Siliconix TrenchFET, onsemi NTMFS, and STMicroelectronics STripFET families.
Key features include: R_DS(on) of 7.2 mOhm typical at VGS=10V and VGS=10V gate drive; avalanche-rated single-pulse energy; optimized intrinsic body diode for low Q_rr and robust commutation; a wide gate-threshold range compatible with 10V standard drive; and a thermally enhanced D2PAK-2 footprint with a tab exposed for direct PCB heatsinking. The PG-TO263-3-2 package (3 pins + tab) supports high continuous current while enabling surface-mount assembly rather than through-hole mounting, reducing assembly cost and improving thermal coupling to the PCB copper pour.
The OptiMOS 3 architecture combines a charge-compensated trench cell with a thin wafer process, reducing both on-resistance per unit area and gate charge by roughly 40 percent versus the prior OptiMOS 2 generation. This FOM (figure of merit: R_DS(on) x Q_g) improvement is the headline metric in modern switching-converter design because total loss is a fixed combination of conduction (I^2 x R_DS(on)) and switching (V x I x f x (Q_g+Q_rr)/I_g) contributions. The intrinsic body diode supports synchronous-rectifier operation in continuous-conduction-mode (CCM) PFC and LLC converters without an external anti-parallel diode.
Typical applications include AC-DC switched-mode power supplies (SMPS) primary-side switching, telecom 48V hot-swap controllers, synchronous rectification on the secondary side of isolated DC-DC converters, solar micro-inverters and string inverters up to 150V DC bus, and high-current motor drive H-bridges for industrial 24-96V systems. In AC-DC SMPS it functions as either the main primary-side switch (where its 150V rating tolerates 100V rectified mains plus margin) or the secondary-side synchronous rectifier.
When designing with this part, use a 10V gate drive and keep the gate-loop layout tight to minimize ringing; gate-source resistors of 10-100 ohm damp the resonance and limit shoot-through. The D2PAK-2 tab must be soldered to a copper pour of at least 1 square inch for continuous 100A operation, and thermal vias under the tab reduce R_thJA from approximately 40 C/W to roughly 15-20 C/W on a standard 4-layer FR-4 board.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IPB072N15N3GATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPB072N15N3GATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), Pin Count.
IPB107N20N3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC123N08NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD082N10N3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ123N08NS3GATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPB072N15N3GATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | 150 V |
| Continuous Drain Current (I_D, Tc=25C) | 100 A |
| Maximum Power Dissipation (P_D, Tc=25C) | 300 W |
| R_DS(on) typical at VGS=10V | 7.2 mOhm |
| Gate-Source Voltage (V_GS) max | +/-20 V |
| Khoảng nhiệt độ hoạt động | -55 C to +175 C |
| Hộp | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
| Avalanche Energy Rated | Yes (single-pulse E_AS) |
| Intrinsic Body Diode | Yes (low Q_rr, sync-rectifier capable) |
| Manufacturer Ordering Code Suffix | GATMA1 (tape and reel, 1000 pcs) |
Cấu hình chân IPB072N15N3GATMA1
| Chân 1 | Gate — Gate drive input; standard 10V drive, +/-20V V_GS absolute max |
| Chân 2 | Drain — Power drain terminal; internally connected to the metal tab |
| Chân 3 | Source — Power source terminal; reference for V_GS and gate drive return |
| Chân Tab | Drain (Tab) — Backside metal tab electrically tied to pin 2 (Drain); serves as primary thermal mounting surface |
Khu vực hoạt động an toàn (SOA) - DC, VGS=10V, Tc=25C
Ứng dụng tiêu biểu
IPB072N15N3GATMA1 phù hợp cho 6 Áp dụngs: AC-DC SMPS Primary-Side Switching, Synchronous Rectification in Isolated DC-DC, 48V Telecom Hot-Swap Controller Switch, Solar String Inverter DC-Side Switching, Industrial Motor Drive H-Bridge, E-Bike and E-Scooter Battery Management.
AC-DC SMPS Primary-Side Switching
The IPB072N15N3GATMA1 serves as the primary-side main switch in 100-200 W AC-DC flyback, forward, and half-bridge converters where rectified mains peaks at 140-180 V. Its 150 V V_DS rating tolerates this voltage plus inductive spike margin, while the 7.2 milliohm R_DS(on) at V_GS=10V keeps conduction loss manageable at 5-10 A primary-side RMS current typical of 150 W designs. OptiMOS 3's low Q_rr body diode reduces commutation loss in CCM PFC front-end stages. The D2PAK-2 tab solders directly to a 1-square-inch copper pour on the primary-side heatsink, sustaining continuous 100 A peaks without external heat sinking. Pair this part with the Infineon ICE2PCS02GXUMA1 CCM PFC controller for a turnkey reference design validated in the Infineon application note AN-2014.
Được đề xuất
Synchronous Rectification in Isolated DC-DC
In isolated 48 V to 5/12 V DC-DC converters, the IPB072N15N3GATMA1 operates as the secondary-side synchronous rectifier replacing Schottky diodes to achieve 2-3 percent efficiency improvement. Its 150 V V_DS provides margin above the 48 V reflected secondary voltage in forward or push-pull topologies, while the 7.2 milliohm R_DS(on) at 100 A conduction handles full-load current with minimal drop. The intrinsic body diode supports CCM operation at high duty cycle without external anti-parallel diodes, simplifying the layout and reducing BOM cost. Switching frequency compatibility to 200 kHz is enabled by OptiMOS 3's low Q_g figure-of-merit. Use a gate transformer or isolated gate driver such as the Infineon 1ED3323MC12NXUMA1 to drive the synchronous FET from the secondary-side controller.
Được đề xuất
48V Telecom Hot-Swap Controller Switch
The IPB072N15N3GATMA1 functions as the main pass-FET in 48 V telecom hot-swap controllers where inrush current limiting, short-circuit protection, and OR-ing redundancy are required. Its 150 V V_DS provides 3x safety margin above the 48 V nominal bus, accommodating transient voltage spikes from backplane inductance during hot-plug events. The 7.2 milliohm typical R_DS(on) at 100 A continuous current keeps the steady-state voltage drop below 1 V at full load, minimizing conduction loss across the FET. Infineon's OptiMOS 3 process delivers robust avalanche-rated single-pulse energy, allowing the FET to absorb the energy of a short-circuit event during the controller's current-limit blanking time. The D2PAK-2 footprint supports high-current surface-mount assembly on the backplane PCB without the through-hole insertion cost of TO-220 alternatives.
Được đề xuất
Solar String Inverter DC-Side Switching
The IPB072N15N3GATMA1 is suited for solar micro-inverter and single-string inverter DC-side switching at up to 150 V DC open-circuit panel voltage, which can rise to 170 V at cold-temperature Voc. Its 150 V breakdown comfortably accommodates this voltage plus switching ringing margin, and the 7.2 milliohm R_DS(on) handles 50-100 A peak inverter current typical of 3-5 kW residential string inverters. OptiMOS 3's low intrinsic body-diode Q_rr enables high-frequency CCM operation in the boost PFC stage preceding the DC-AC inversion, raising efficiency by 1-2 percent versus prior-generation MOSFETs. The D2PAK-2 tab provides direct thermal coupling to the inverter chassis heatsink via PCB copper, supporting the 300 W maximum power dissipation rating without active cooling in well-ventilated outdoor enclosures.
Được đề xuất
Industrial Motor Drive H-Bridge
In 24-96 V industrial motor drive H-bridges, the IPB072N15N3GATMA1 serves as the high-side and low-side switches controlling brushed DC or brushless DC motor windings. The 150 V V_DS rating covers 96 V DC bus plus back-EMF transients during regenerative braking events. At 100 A continuous drain current the part directly drives fractional-horsepower motors without paralleling devices, simplifying the BOM and reducing gate-driver complexity. The OptiMOS 3 process's low gate charge enables 20-50 kHz PWM frequency for quiet operation and fine speed control, while the 7.2 milliohm R_DS(on) limits conduction loss in the H-bridge to under 5 percent at 50 A. Combine with the Infineon 2ED2183S06FXUMA1 600 V gate driver for 96 V bus designs requiring reinforced isolation.
Được đề xuất
E-Bike and E-Scooter Battery Management
In 36-48 V lithium-ion battery packs for e-bikes, e-scooters, and light electric vehicles, the IPB072N15N3GATMA1 acts as the main disconnect FET and pre-charge switch for the BMS (battery management system). The 150 V V_DS tolerates the 54 V peak voltage of a fully charged 13S lithium pack plus inductive kickback from the motor controller during regen braking. The 7.2 milliohm R_DS(on) limits continuous conduction loss during motor-drive assist at 30-50 A sustained current, extending range by 2-3 percent versus higher-R_DS(on) alternatives. Low Q_rr body diode supports bidirectional current flow without external diode bridges, while the surface-mount D2PAK-2 package reduces pack-assembly cost versus through-hole TO-220 alternatives. For lower-voltage 24 V packs consider the IPB107N20N3GATMA1 drop-in alternative for additional V_DS headroom.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPB072N15N3GATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPB107N20N3GATMA1 | BSC123N08NS3GATMA1 | IPD082N10N3GATMA1 | BSZ123N08NS3GATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK-2) | PG-TO263-3-2 (D2PAK-2) - same | PG-TO263-3-2 (D2PAK-2) - same | PG-TO263-3-2 (D2PAK-2) - same | PG-TO263-3-2 (D2PAK-2) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| V_DS (Drain-Source Voltage) | 150 V | 200 V | 80 V | 100 V | 80 V |
| Technology Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 3 | OptiMOS 5 |
Bảo phân biệt quan trọng
- Highest V_DS in 7 mOhm-class D2PAK-2 OptiMOS family (vsIPD082N10N3GATMA1)
- Lower R_DS(on) at same voltage class (vsBSZ123N08NS3GATMA1)
- OptiMOS 3 process maturity for high-volume AC-DC SMPS (vsBSC123N08NS3GATMA1 (OptiMOS 5))
Ghi chú thiết kế
Estimated: at I_D = 50 A continuous and V_GS = 10 V, conduction loss equals I^2 x R_DS(on) = 50^2 x 0.0072 = 18 W. With the D2PAK-2 tab soldered to a 1 sq-in copper pour on a 4-layer FR-4 board, R_thJA is approximately 40 C/W without thermal vias and 15-20 C/W with a 4x4 array of 0.3 mm thermal vias under the tab. Without vias, junction temperature rise is roughly 18 W x 40 C/W = 720 C, which exceeds the 175 C maximum; with vias the rise is 18 x 17.5 = 315 C, still requiring either reduced current or an external heatsink attached to the tab.
Gate-drive loop area (gate-drive IC output -> gate resistor -> MOSFET gate -> source lead -> back to gate-drive ground) must be minimized to less than 1 sq-cm to limit parasitic inductance and ringing. Place the gate-drive IC within 5 mm of the gate pin. Use a 10-100 ohm gate-source resistor in parallel with the gate-drive pull-up to damp LC resonance caused by the gate capacitance and source-lead inductance. The drain-source loop (drain tab -> load -> ground -> source pin) is more critical at high di/dt - keep this loop compact and use wide copper pours to minimize voltage overshoot at turn-off.
Avoid exceeding the +/-20 V V_GS absolute maximum rating; typical 10 V drive is ideal, but gate-oscillation transients during switching can overshoot. Place a 10V Zener diode from gate to source as close to the MOSFET pins as possible to clamp transients. Do not exceed 150 V V_DS, including inductive spike overshoot during turn-off; add a snubber (RC or RCD) across the primary winding in flyback converters or across the MOSFET in hard-switched half-bridge designs to absorb leakage-inductance energy. The intrinsic body diode has limited reverse-recovery capability - do not use this part in continuous-conduction synchronous rectification above 100 kHz without verifying Q_rr against the controller's dead-time requirements.
The D2PAK-2 tab must be soldered to a substantial copper pour of at least 1 sq-inch (645 sq-mm) on the top layer. Add 4-9 thermal vias (0.3 mm diameter, 1.0 mm pitch) directly under the tab to transfer heat to the bottom layer or inner copper planes. Use a stencil aperture of 0.13 mm thickness to ensure adequate solder volume under the tab without bridging to the source pin. Keep the gate-source Kelvin connection trace short and direct to minimize common-source inductance that would otherwise slow switching and increase switching loss.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product declaration. Lead-free (Pb-free) reflow soldering compatible per JEDEC J-STD-020. Halogen-free per IEC 61249-2-21. Not AEC-Q100 qualified - this part targets industrial and telecom, not automotive. For AEC-Q100 qualified 150 V MOSFET in similar package, contact Infineon for automotive-grade part number.
