BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
MPN: BSC123N08NS3GATMA1 ✓ Hoạt độngBSC123N08NS3GATMA1 Tóm tắt
N-channel power MOSFETs are voltage-controlled switches that use a gate-source voltage to modulate conduction between drain and source. In the broader taxonomy, MOSFETs belong to discrete semiconductors -> transistors -> field-effect transistors -> power MOSFETs. OptiMOS 3 is Infineon's third-generation trench power-MOSFET platform optimized for low RDS(on) per package area, low gate charge, and fast switching - parameters that directly determine conduction and switching losses in switched-mode power conversion.
Key specifications include 12.3 mOhm maximum RDS(on) at VGS=10 V, ±20 V maximum gate-source voltage, and an operating junction temperature range of -55C to +150C. The PG-TDSON-8-1 (SuperSO8) package provides a low thermal-resistance path (down to ~1.5 C/W junction-to-case depending on PCB layout) and is footprint-compatible with industry-standard SO-8 power pads, enabling drop-in PCB replacement in many 80 V designs.
The OptiMOS 3 cell architecture uses an advanced trench geometry that minimizes the on-resistance contribution of the epi layer while preserving avalanche ruggedness. The integrated body diode supports synchronous-rectifier operation in buck, boost, and half-bridge topologies without external anti-parallel diodes, reducing BOM count and PCB area.
Typical applications include synchronous rectification in 48 V telecom and server point-of-load converters, hot-swap and OR-ing switches on 48-60 V distribution rails, motor-drive half-bridges in industrial 24-48 V systems, and primary-side switching in solar micro-inverters. The low RDS(on) per mm2 also suits high-current eFuse and battery-protection FET roles in 48 V battery packs.
When designing with this device, ensure VGS drive of 10 V (logic-level 4.5 V variants exist separately) and pay attention to PCB copper area for thermal performance - the same 12.3 mOhm part can dissipate far more on a 2 oz 1-square-inch copper pour than on a minimal 1 oz land pattern.
This page synthesizes distributor pricing, parametric drop-in alternatives in PG-TDSON-8, and practical design notes not collated in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho BSC123N08NS3GATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC123N08NS3GATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Part Number, Drain-Source Voltage (VDS).
BSZ123N08NS3GATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC052N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0906NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC077N12NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC047N08NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NTMFS4935NT1G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SiR870DP
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC123N08NS3GATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 3 |
| Channel Type | N-Channel |
| Configuration | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | 11 A |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | ±20 V |
| Power Dissipation (Tc) | 66 W |
| Power Dissipation (Ta) | 2.5 W |
| Nhiệt độ mối nối hoạt động | -55C to +150C |
| Hộp | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant with exemption |
| Automotive Qualified | Yes (AEC-Q101) |
Cấu hình chân BSC123N08NS3GATMA1
| Chân 1 | Source — Source (connected to GND on low-side; pins 1-3 are tied together for lowest source-inductance) |
| Chân 2 | Source — Source (tied to pin 1 and pin 3 internally and on the PCB) |
| Chân 3 | Source — Source (tied to pin 1 and pin 2) |
| Chân 4 | Gate — Gate drive input (10 V nominal; ±20 V max VGS) |
| Chân 5 | Drain — Drain (pins 5-8 are tied together and form the thermal pad) |
| Chân 6 | Drain — Drain (thermal pad - expose on PCB for heat dissipation) |
| Chân 7 | Drain — Drain (thermal pad) |
| Chân 8 | Drain — Drain (thermal pad) |
Khu vực hoạt động an toàn - DC continuous
Ứng dụng tiêu biểu
BSC123N08NS3GATMA1 phù hợp cho 6 Áp dụngs: 48 V Synchronous Rectifier, 48 V Hot-Swap / OR-ing Switch, Industrial 24-48 V Motor Drive Half-Bridge, Solar Micro-Inverter Primary-Side Switch, Telecom 48 V eFuse / Battery Protection FET, USB-PD EPR High-Current Switch.
48 V Synchronous Rectifier
The BSC123N08NS3GATMA1 is used as the low-side synchronous rectifier FET in 48 V buck and half-bridge converters for telecom and server point-of-load applications. With 12.3 mOhm RDS(on) at VGS=10 V and 80 V VDS rating, it comfortably handles 48 V nominal rails plus 60 V transient spikes per ETSI EN 300 132-2. The OptiMOS 3 platform's low Qgd (~6 nC typical) keeps dead-time losses small at 200-500 kHz switching frequencies. Compared with a Schottky-diode rectifier, the synchronous-FET topology recovers 2-4% efficiency and eliminates reverse-recovery charge.
Được đề xuất
48 V Hot-Swap / OR-ing Switch
In 48 V distribution backplanes, BSC123N08NS3GATMA1 acts as the OR-ing or hot-swap protection FET, taking advantage of its 80 V VDS margin and 55 A continuous current rating. The 12.3 mOhm RDS(on) at full VGS=10 V drive keeps conduction loss around 7 W at 24 A (P=I^2*R), which a 1 sq-in PCB copper area can dissipate with thermal vias to the inner plane. Its AEC-Q101 qualification makes it suitable for both telecom shelves and 48 V mild-hybrid automotive eFuse loops.
Được đề xuất
Industrial 24-48 V Motor Drive Half-Bridge
BSC123N08NS3GATMA1 serves as the low-side switch in industrial 24-48 V brushless DC (BLDC) motor drives, where its 80 V VDS rating absorbs the L*di/dt overshoot of the motor winding inductance during commutation. The 55 A continuous drain current supports drives up to ~2 kW without paralleling FETs. The OptiMOS 3 cell's avalanche rating handles the regenerative braking energy dump back into the DC bus through the body diode. Designers should still use gate-source resistors of 10-47 ohm to dampen ringing on the long motor-cable harness.
Được đề xuất
Solar Micro-Inverter Primary-Side Switch
In solar micro-inverter and string-inverter primary stages, BSC123N08NS3GATMA1 is used as the primary-side switch of a flyback or HF-isolated forward converter on 40-60 V PV input rails. The 80 V VDS rating tolerates the leakage-inductance spike of the HF transformer with adequate snubber margin. The low Qoss of OptiMOS 3 reduces the primary-side switching loss at 50-100 kHz, critical for CEC-weighted efficiency. AEC-Q101 qualification also supports mobile solar and vehicle-integrated PV (VIPV) applications.
Được đề xuất
Telecom 48 V eFuse / Battery Protection FET
BSC123N08NS3GATMA1 is well-suited as the protection FET in 48 V lithium-ion battery packs and telecom eFuse modules, where its 80 V VDS margin covers 48 V nominal plus full-charge transients to 54.6 V and inductive kick from hot-plug events. The 12.3 mOhm RDS(on) keeps continuous conduction loss low during normal discharge (≈10 W at 30 A). AEC-Q101 qualification and -55C to +150C junction temperature range meet outdoor telecom and mild-hybrid automotive battery-pack requirements.
Được đề xuất
USB-PD EPR High-Current Switch
BSC123N08NS3GATMA1 can serve as the high-current protection switch in USB-PD Extended Power Range (EPR) hubs operating at 28 V / 36 V / 48 V nominal rails up to 240 W. The 80 V VDS rating easily covers the 48 V EPR highest fixed PDO plus cable-transient overshoots, while the 12.3 mOhm RDS(on) limits full-load voltage drop to ~0.5 V at 5 A. Its SuperSO8 footprint is well-suited to the dense PCBs of modern docking stations and multi-port chargers.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC123N08NS3GATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSZ123N08NS3GATMA1 | BSC052N08NS5ATMA1 | BSC0906NSATMA1 | BSC077N12NS3GATMA1 | BSC047N08NS3GATMA1 | NTMFS4935NT1G | SiR870DP |
|---|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TSDSON-8 (5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | SO-8 FL (5x6) - pin-compatible | PowerPAK SO-8 (5x6) - pin-compatible |
| VDS max (V) | 80 | 80 | 80 | 60 | 120 | 80 | 80 | 80 |
| RDS(on) max @ VGS=10V (mOhm) | 12.3 | 12.3 | 5.2 | 9.0 | 7.7 | 4.7 | 10.0 (typ) | 11.0 (typ) |
| Continuous ID @ Tc=25C (A) | 55 | 55 | 100 | 60 | 80 | 100 | 60 (typ) | 60 (typ) |
| Technology Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | ON Semi N-channel | Vishay TrenchFET |
| Automotive (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes | Yes | No |
Bảo phân biệt quan trọng
- 12.3 mOhm RDS(on) in the smallest 80 V SuperSO8 footprint (vsBSC0906NSATMA1 (60 V, 9 mOhm))
- OptiMOS 3 cost-optimized for high-volume 80 V designs (vsBSC052N08NS5ATMA1 (OptiMOS 5, 5.2 mOhm))
- Pin-compatible second-source from ON Semi and Vishay (vsNTMFS4935NT1G (onsemi) and SiR870DP (Vishay))
Ghi chú thiết kế
Estimated: At VIN=48 V, ID=20 A continuous on a 1 sq-in 2 oz FR4 PCB copper pour, power dissipation is P=I^2*RDS(on) ≈ 20^2 × 0.012 = 4.8 W. SuperSO8 with a 1 sq-in copper pad typically achieves theta_JA ≈ 50 C/W, giving a junction temperature rise of about 240C above ambient - insufficient margin. Add top-side thermal vias (0.3 mm pitch, 12+ vias) to the inner plane and at least 2 sq-in of copper, then theta_JA drops to ~30 C/W and the junction rises 144C, which is acceptable at 25C ambient. For continuous 30 A operation a forced-air or heatsink is mandatory.
Place the gate drive resistor (10-47 ohm) within 5 mm of pin 4 to minimize gate-loop inductance and ringing. Source pins 1-3 must all be soldered and tied to a low-impedance ground plane via a stitched via array. Drain pins 5-8 form the thermal pad - use an array of 0.3 mm thermal vias on 1.0 mm pitch to a 2 oz inner plane. Recommended land pattern follows the IPC-7351 SO-8 PowerPAD family; use the manufacturer's land pattern in the datasheet, not the standard SO-8 footprint.
Do not exceed ±20 V VGS - gate-oxide rupture is permanent. Always include a 10 kohm gate-source pull-down resistor to keep the FET off during controller power-up; without it the gate can float into the linear region and self-heat. The body diode has modest reverse-recovery performance - for hard-switched bridge topologies add external anti-parallel Schottky diodes or use a part from the OptiMOS 5 family. Never operate above 80 V VDS even for microseconds; transient suppression (TVS, snubber) is required when switching inductive loads.
Keep the switching-node (drain) loop area below 0.5 cm^2 to limit parasitic inductance that overshoots during turn-off. Route the gate drive on the opposite PCB layer from the drain node to minimize capacitive coupling (Miller injection). For paralleled FETs add individual gate-source resistors to suppress parasitic oscillations above 5 MHz - paralleling without per-FET gate damping is a common cause of sub-cycle shoot-through in half-bridge designs.
Thông tin tuân thủ
AEC-Q101 qualified (automotive MOSFET stress-test standard). RoHS compliant with the high-melting-point lead exemption (exemption 7a under 2011/65/EU) typically applied to the die-attach solder. SVHC declared above threshold per Arrow's product declaration (likely related to the lead exemption).
