BSC052N08NS5ATMA1 - 80V 95A 5.2mΩ OptiMOS 5 N-FET | Infineon
MPN: BSC052N08NS5ATMA1 ✓ Hoạt độngBSC052N08NS5ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used for switching and amplification of electrical signals in power conversion circuits. Within the broader semiconductor taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> field-effect transistors -> power MOSFETs. OptiMOS 5 is Infineon's fifth-generation 80 V-300 V power MOSFET platform optimized for synchronous rectification, telecom converters, and high-frequency SMPS stages.
Key features include an ultra-low RDS(on) of 5.2 mΩ max (44% reduction versus the previous generation), output capacitance reduced by up to 44% for lower switching losses, a logic-level VGS(th) around 2.5-3.0 V enabling driver-friendly gate drive, and a power dissipation rating of 83 W at Tc (2.5 W at Ta). The OptiMOS 5 cell architecture delivers lower Qg, Qgd, and Qrr figures than its predecessor, enabling faster switching edges and higher efficiency at elevated switching frequencies.
The device uses Infineon's advanced trench-gate process with an optimized body diode that minimizes reverse-recovery charge (Qrr). This makes it ideal for the synchronous-rectifier (SR) position in half-bridge and full-bridge topologies, where the body diode otherwise dominates switching loss and can cause shoot-through during dead time.
Typical applications include synchronous rectification in 48 V telecom and server point-of-load converters, primary-side switching in telecom DC-DC bricks, motor drive H-bridges, and high-current OR-ing / hot-swap circuits. It is particularly suited for high-switching-frequency (>300 kHz) hard-switched and soft-switched converters where conduction and switching losses must both be minimized.
When designing with this device, ensure the gate-driver can source/sink sufficient peak current to charge the gate charge within the desired switching period, and pay attention to PCB layout to minimize source-inductance loop area, which is critical for limiting voltage overshoot and ringing at the drain node.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho BSC052N08NS5ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC052N08NS5ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Operating Junction Temperature.
BSC117N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0901NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0906NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0902NSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC023N08NS5SCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC094N06LS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC052N08NS5ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSC052N08NS5ATMA1 |
| Technology | OptiMOS 5 |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc) | 95 A |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V |
| Total Power Dissipation (Tc) | 83 W |
| Total Power Dissipation (Ta) | 2.5 W |
| Nhiệt độ mối nối hoạt động | -55C to +150C |
| Hộp | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 (unlimited) |
Cấu hình chân BSC052N08NS5ATMA1
| Chân 1 | Source — Source connection (low-side reference for gate drive) |
| Chân 2 | Source — Source connection (low-side reference for gate drive) |
| Chân 3 | Source — Source connection (low-side reference for gate drive) |
| Chân 4 | Gate — Gate drive input (logic-level, VGS(th) ~2.5-3.0 V) |
| Chân 5 | Drain — Drain connection (tied to exposed pad) |
| Chân 6 | Drain — Drain connection (tied to exposed pad) |
| Chân 7 | Drain — Drain connection (tied to exposed pad) |
| Chân 8 | Drain — Drain connection (tied to exposed pad) |
Khu vực hoạt động an toàn (DC, Ta=25C, single pulse)
Ứng dụng tiêu biểu
BSC052N08NS5ATMA1 phù hợp cho 6 Áp dụngs: 48V Telecom Synchronous Rectification, Primary-Side Switching in Telecom DC-DC Bricks, Server & Datacenter Point-of-Load Converters, Industrial Motor Drive H-Bridge, Battery Management & Hot-Swap OR-ing, Solar Inverter / MPPT Stage.
48V Telecom Synchronous Rectification
The BSC052N08NS5ATMA1 is optimized for the synchronous-rectifier (SR) position in 48 V telecom DC-DC converters where the body diode traditionally dominates switching loss. Its OptiMOS 5 cell architecture delivers 5.2 mΩ max RDS(on) at VGS=10V - approximately 44% lower than the prior OptiMOS generation - reducing I²R conduction loss at 30-50 A continuous currents. Output capacitance is reduced by up to 44%, which directly cuts switching loss at 200-500 kHz operating frequencies typical of modern isolated bus converters. With 83 W power dissipation capability and SuperSO8 thermal pad, the device can replace two paralleled older-generation MOSFETs in high-density brick designs, freeing board area and reducing BOM cost. Designers should match gate-driver rise/fall times to the gate charge (Qg) figure in the datasheet for clean switching edges.
Được đề xuất
Primary-Side Switching in Telecom DC-DC Bricks
In isolated telecom DC-DC bricks (e.g. 36-75 V input to 12 V/5 V output), the BSC052N08NS5ATMA1 serves as the primary-side high-side and low-side switch in half-bridge or full-bridge topologies. Its 80 V VDS rating provides adequate margin for 75 V telecom transient bus voltage, while the 95 A continuous ID rating supports 500 W+ brick designs with proper thermal management. The OptiMOS 5 low Qrr (reverse-recovery charge) is critical here because hard-switched primary stages otherwise suffer from body-diode reverse-recovery loss that scales with switching frequency. Combined with a high-density gate-driver such as the IFX007TAUMA1 or 1EDI60N12AFXUMA1, this part enables switching frequencies above 300 kHz without efficiency penalty. Designers should keep the high-side gate-driver loop area minimal to suppress dv/dt-induced ringing.
Được đề xuất
Server & Datacenter Point-of-Load Converters
The BSC052N08NS5ATMA1 fits server and datacenter 48 V-to-PoL converter topologies where high efficiency at partial load is critical for meeting 80 Plus Titanium-class standards. With RDS(on) of 5.2 mΩ and ID of 95 A, it handles 30-50 A continuous load currents typical of CPU/GPU core voltage rails with low conduction loss. The exposed SuperSO8 thermal pad enables direct PCB heatsinking through inner copper layers, allowing up to 2-3 W steady-state dissipation without external heatsinks. The OptiMOS 5 platform's low output capacitance reduces switching loss in hard-switched buck stages operating at 500 kHz to 1 MHz - critical for shrinking magnetics and increasing power density in datacenter PSUs. Low-side SR applications benefit most from the part's low Qrr.
Được đề xuất
Industrial Motor Drive H-Bridge
The BSC052N08NS5ATMA1 serves in industrial motor drive H-bridge modules rated up to 48 V / 50 A continuous, such as BLDC drives for pumps, fans, and small servo motors. Its 80 V VDS rating covers 48 V bus with 60% safety margin for back-EMF spikes and DC-bus ringing during PWM switching. The 95 A continuous ID rating supports peak motor-start currents of 200-300 A in short bursts (pulsed drain current spec applies), enabling smaller heatsinks than competing 60 V/75 A parts. The SuperSO8 5x6 mm footprint is compatible with standard H-bridge PCB reference designs from gate-driver IC vendors like the IFX007TAUMA1. Designers should add gate-source pull-down resistors (10-100 kΩ) to prevent accidental turn-on during controller reset.
Được đề xuất
Battery Management & Hot-Swap OR-ing
In battery management systems and -48 V telecom OR-ing / hot-swap applications, the BSC052N08NS5ATMA1 acts as the load-sharing or inrush-current-limiting switch. Its low RDS(on) of 5.2 mΩ minimizes voltage drop and dissipation in the active path - critical for parallel battery strings where voltage drop imbalance reduces capacity utilization. The 80 V VDS rating handles -48 V nominal plus full transients from battery disconnect events. The SuperSO8 footprint allows direct PCB replacement of older DPAK or D2PAK OR-ing FETs at higher current density. Designers should include a gate-drive resistor (10-100 Ω) to control turn-on dV/dt and limit inrush during hot-plug events. The part is also suitable as the reverse-polarity protection FET in 24-48 V industrial battery systems.
Được đề xuất
Solar Inverter / MPPT Stage
In solar micro-inverters and MPPT (maximum power point tracking) boost stages, the BSC052N08NS5ATMA1 acts as the main switching element on the 40-60 V PV input side. The 80 V VDS rating accommodates open-circuit PV voltage transients up to 60 V (cold-panel Voc typically 10-15% above STC), while the 95 A ID rating supports 3-5 kW micro-inverter designs. OptiMOS 5's low Qrr reduces switching loss in the MPPT boost converter operating at 50-150 kHz, improving weighted conversion efficiency. The SuperSO8 footprint allows compact PCB layouts for DIN-rail or wall-mount micro-inverter form factors. Designers should consider the BSC023N08NS5SCATMA1 (2.3 mΩ) for higher-current >10 kW string inverter designs sharing the same footprint.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC052N08NS5ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC117N08NS5ATMA1 | BSC0901NSATMA1 | BSC0906NSATMA1 | BSC0902NSIATMA1 | BSC023N08NS5SCATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8 (SuperSO8) 5x6 mm - same | PG-TDSON-8 (SuperSO8) 5x6 mm - same | PG-TDSON-8 (SuperSO8) 5x6 mm - same | PG-TDSON-8 (SuperSO8) 5x6 mm - same | PG-TDSON-8 (SuperSO8) 5x6 mm - same | PG-TDSON-8 (SuperSO8) 5x6 mm - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS (V) | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V | 60 V |
| RDS(on) max @ VGS=10V | 5.2 mΩ | 11.7 mΩ | 9.0 mΩ | 9.0 mΩ | 9.0 mΩ | 2.3 mΩ | 9.4 mΩ |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS | OptiMOS | OptiMOS 5 | OptiMOS 5 |
| Operating Temperature | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C |
Bảo phân biệt quan trọng
- Lower RDS(on) than prior OptiMOS generation (vsBSC0906NSATMA1)
- Higher continuous drain current rating (vsBSC0906NSATMA1)
- OptiMOS 5 generation with lower Qrr (vsBSC0901NSATMA1)
Ghi chú thiết kế
Estimated: At continuous ID = 50 A in a 48 V-to-12 V synchronous buck stage (VIN = 48 V, VDS during OFF = 36 V, conduction loss = I²R × D = 50² × 0.0052 × 0.25 = 3.25 W), the device dissipates roughly 3-4 W including switching loss. With SuperSO8 RθJA ≈ 50 C/W on 1 oz 1-square-inch copper pad, junction temperature rises 175 C above ambient - exceeding the 150 C limit. For 50 A continuous operation, use at least 2-3 square inches of copper, an internal heat-spreader layer, or upgrade to BSC023N08NS5SCATMA1 (2.3 mΩ). Always derate to maintain Tj(max) = 125 C for reliable long-term operation.
Minimize the high-side FET switching loop: keep the bootstrap-cap, gate-driver, and high-side FET drain-source loop area under 0.5 cm² to limit parasitic inductance that causes VDS overshoot and gate-drive ringing. Place a 10-100 Ω gate resistor in series with the gate-drive output to dampen oscillations. Route the gate trace as a 4-mil microstrip with adjacent ground return. For the SuperSO8 package, flood the exposed drain pad with at least 1 oz copper on top layer plus thermal vias (0.3 mm drill, 0.5 mm pitch, 4-6 vias minimum) connecting to inner ground/power planes for optimal heat dissipation.
Keep the gate-drive loop area (gate-driver output → FET gate → FET source → gate-driver ground return) physically small - ideally < 0.25 cm². Use a kelvin-source connection where the gate-driver ground ties directly to the FET source pad rather than sharing the power-ground path. This prevents source-inductance-induced gate-drive voltage collapse during fast switching edges (dv/dt > 5 V/ns typical of OptiMOS 5). For paralleled FETs, use individual gate-resistors and a balanced layout to prevent parasitic oscillation. Add 100 kΩ gate-source pull-down resistors to keep the FET off during MCU/controller reset or brown-out events.
Do not exceed the absolute maximum VGS = ±20 V - even brief transients from gate-driver stray inductance can exceed this and permanently damage the gate oxide. Add a 10-22 V TVS diode or 10 kΩ gate-source resistor if the gate driver is unbypassed. Avoid operating continuously above ID = 75 A in the SuperSO8 package without proper thermal management - the part will thermally limit at Tj = 150 C. Finally, ensure the input bus voltage never exceeds 80 V including transients; add a TVS or snubber for inductive load switching to clamp voltage spikes below 80 V.
For switching frequencies above 300 kHz, the OptiMOS 5 low Qg reduces gate-drive loss but increases susceptibility to dv/dt-induced false turn-on via the Miller gate-drain capacitance (Cgd). Mitigate by using a gate-drive supply of at least 12 V (not 10 V) for adequate margin above VGS(th), and by adding a small (10-100 Ω) gate-source resistor that forms a low-pass filter with Cgd to slow positive dV/dt transients. If ringing exceeds 30% of VDS, increase the gate resistor or add a ferrite bead in series with the gate.
Thông tin tuân thủ
RoHS and REACH compliant per LCSC listing (C3288911) and Infineon product page. MSL Level 1 per Infineon SuperSO8 package qualification. Not AEC-Q100 qualified - select an automotive-grade Infineon OptiMOS 5 variant for vehicle applications.
