IPZ40N04S53R1ATMA1 - 40V 40A OptiMOS 5 N-MOSFET | Infineon
MPN: IPZ40N04S53R1ATMA1 ✓ Hoạt độngIPZ40N04S53R1ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between drain and source. MOSFETs sit within the broader taxonomy of discrete semiconductors (transistor -> FET -> MOSFET -> power MOSFET -> OptiMOS family) and are the workhorse of modern DC-DC conversion, motor drive and hot-swap circuits because of their high switching speed, low conduction loss and easy gate drive.
The defining features of this part are its ultra-low 3.1 mOhm on-resistance at 10 V, AEC-Q101 automotive qualification with MSL1 robustness to 260 C peak reflow, 100 % avalanche-tested silicon, and the compact thermally-enhanced PG-TSDSON-8 (5x6 mm) package with exposed pad. Drive is specified at 7 V (max R_DS on) and 10 V (min R_DS on), with a maximum VGS of +/-20 V. These characteristics give engineers a high-current, low-loss switch that fits on small PCBs in space-constrained automotive environments.
The OptiMOS 5 cell platform reduces Figure of Merit (R_DS(on) x Qg) versus the prior OptiMOS 3 generation, enabling higher switching frequencies with smaller magnetics in buck or boost converters. The PG-TSDSON-8 exposed pad slashes thermal resistance, supporting the 71 W power budget at moderate copper pours and allowing 40 A operation in confined spaces.
Typical applications include 12 V and 24 V automotive ECUs, electric power steering, braking and chassis systems, brushed and brushless DC motor drivers, high-current synchronous rectification, battery management protection FETs, and USB-PD / e-fuse hot-swap front ends.
When designing with this part, keep the gate drive loop tight (low-inductance gate-source return) to avoid ringing at the 20 V VGS absolute maximum, and provide sufficient copper pour on the exposed pad to keep junction temperature below the 175 C limit during 100 % avalanche events.
This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives and practical layout guidance not collected in any single Infineon document.
Bộ thay thế dễ dàng lắp đặt cho IPZ40N04S53R1ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPZ40N04S53R1ATMA1 (cùng hình factor và footprint) — khác nhau ở Operating Temperature Range, Package, Drain-Source Voltage (VDS), Technology, Qualification.
IPZ40N04S5L-3R1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPZ40N04S5-3R1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
ISC0805NLSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC034N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0902NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC011N06LM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPZ40N04S53R1ATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (V_DSS) | 40 V |
| Continuous Drain Current (I_D) at Tc=25 C | 40 A |
| Power Dissipation (P_D) at Tc=25 C | 71 W |
| R_DS(on) max at V_GS=10 V, I_D=20 A | 3.1 mOhm |
| Drive Voltage (Max R_DS on, Min R_DS on) | 7 V, 10 V |
| Maximum V_GS | +/-20 V |
| Khoảng nhiệt độ hoạt động | -55 C to +175 C |
| Hộp | PG-TSDSON-8 (5x6 mm) with exposed pad |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | MSL1 (260 C peak reflow) |
| Qualification | AEC-Q101 automotive |
| Avalanche Tested | 100 % |
| RoHS Compliance | Compliant (Green Product) |
| Series | OptiMOS 5 (IPZ family) |
Cấu hình chân IPZ40N04S53R1ATMA1
| Chân 1 | S (Source) — Source connection, internally connected to pins 2, 3, 5, 6, 7 and the exposed pad |
| Chân 2 | S (Source) — Source connection |
| Chân 3 | S (Source) — Source connection |
| Chân 4 | G (Gate) — Gate drive input - drive between 7 V (max R_DS on) and 10 V (min R_DS on) |
| Chân 5 | S (Source) — Source connection |
| Chân 6 | S (Source) — Source connection |
| Chân 7 | S (Source) — Source connection |
| Chân 8 | D (Drain) / EP — Drain connection on top, exposed thermal pad on bottom for heat dissipation |
Khu vực hoạt động an toàn - IPZ40N04S53R1ATMA1
Ứng dụng tiêu biểu
IPZ40N04S53R1ATMA1 phù hợp cho 6 Áp dụngs: 12 V Automotive ECU Load Switch, Electric Power Steering Motor Drive, Brushed DC Motor Driver (H-Bridge), Synchronous Rectifier in 12 V Buck Converter, Battery Management Protection FET, USB-PD / High-Current Hot-Swap Front End.
12 V Automotive ECU Load Switch
The IPZ40N04S53R1ATMA1 is well-suited to 12 V automotive ECU load switching thanks to its 40 V V_DSS rating that survives 24 V jump-start and ISO 7637-2 load-dump transients with comfortable margin, and its 40 A continuous drain current handles high-current ECU rails with low 3.1 mOhm conduction loss. Placed between the battery feed and the ECU power input with a 10 V gate drive, it dissipates only 1.2 W at 20 A load (vs 8 W for a 20 mOhm part) - reducing junction temperature rise and improving fuel-economy-sensitive standby current. AEC-Q101 qualification removes the need for additional automotive stress testing.
Được đề xuất
Electric Power Steering Motor Drive
The IPZ40N04S53R1ATMA1 serves as the high-side/low-side switch in electric power steering half-bridges where its 40 V V_DSS and 71 W power dissipation support PWM currents up to 40 A at Tc=25 C, and its 3.1 mOhm R_DS(on) keeps I^2R losses below 5 W per FET at full load. The 175 C junction rating tolerates the harsh under-hood thermal environment, while AEC-Q101 qualification satisfies OEM reliability requirements. Gate drive from a TLE9180 BLDC gate IC at 10 V ensures the part operates in its lowest R_DS(on) region throughout the steering assist duty cycle.
Được đề xuất
Brushed DC Motor Driver (H-Bridge)
In a brushed DC motor H-bridge, the IPZ40N04S53R1ATMA1 provides four identical low-side switches whose 40 A rating exceeds typical 12 V window-lift or seat-adjust motor peaks, and whose 3.1 mOhm R_DS(on) keeps voltage drop across the bridge below 0.15 V at 50 A peak. The PG-TSDSON-8 exposed pad enables direct PCB heatsinking, while the +/-20 V V_GS rating tolerates the regenerative braking spikes that flow back through the body diode during PWM commutation. AEC-Q101 screening matches automotive door-module and seat-controller qualification profiles.
Được đề xuất
Synchronous Rectifier in 12 V Buck Converter
The IPZ40N04S53R1ATMA1 works as the synchronous low-side FET in a 12 V-to-3.3 V/5 V buck converter where its 3.1 mOhm R_DS(on) yields >96 % efficiency at 20 A load, and its low Qg enables switching frequencies up to 500 kHz without excessive gate-drive loss. The 40 V V_DSS gives headroom for ringing above the 12 V rail during switching transients. The PG-TSDSON-8 footprint is shared by other OptiMOS 5 parts, enabling easy scalability to higher-current rails by paralleling multiple devices on the same PCB layout.
Được đề xuất
Battery Management Protection FET
As a battery-pack protection FET in a 12 V Li-ion or LiFePO4 pack, the IPZ40N04S53R1ATMA1 provides 40 A continuous discharge rating with 3.1 mOhm on-resistance - keeping conduction loss below 1.3 W at 20 A. Its 100 % avalanche-tested silicon withstands the inductive kickback when the protection circuit interrupts a short-circuit, and AEC-Q101 compliance matches automotive 12 V battery systems used in mild-hybrid vehicles. The exposed pad of the PG-TSDSON-8 package conducts heat directly into the battery-management PCB ground plane.
Được đề xuất
USB-PD / High-Current Hot-Swap Front End
The IPZ40N04S53R1ATMA1 functions as a hot-swap FET on a 12 V-to-20 V USB-Power-Delivery input rail where its 3.1 mOhm R_DS(on) and 40 A rating support 100 W (20 V/5 A) loads with minimal voltage drop, and its 40 V V_DSS comfortably exceeds the USB-PD extended 20 V range plus transient ringing. The exposed thermal pad of the PG-TSDSON-8 package dissipates the 7 W inrush losses during connector mating, while AEC-Q101 screening supports both automotive and industrial USB-PD applications. Gate drive from a hot-swap controller like the LTC4232 provides inrush current limiting.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPZ40N04S53R1ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPZ40N04S5L-3R1 | IPZ40N04S5-3R1 | ISC0805NLSATMA1 | BSC034N06NSATMA1 | BSC0902NSATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8 | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DSS (V) | 40 | 40 | 40 | 80 | 60 | 30 | 60 |
| R_DS(on) max (mOhm) at 10 V V_GS | 3.1 | 3.1 | 3.1 | 5.0 | 3.4 | 9.0 | 1.1 |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Max Operating Temperature (C) | 175 | 175 | 175 | 175 | 175 | 175 | 175 |
Bảo phân biệt quan trọng
- Tightest R_DS(on) binning with 100 % avalanche screening (vsIPZ40N04S5L-3R1)
- Higher V_DSS margin in same footprint for 24 V systems (vsBSC0902NSATMA1)
- Lower conduction loss at 10 V V_GS than 60 V V_DSS alternatives (vsBSC034N06NSATMA1)
- Pin-for-pin compatibility with the IPZ40N04S5 family for design scalability (vsISC0805NLSATMA1)
Ghi chú thiết kế
At 20 A continuous drain current with 3.1 mOhm R_DS(on) and 100 % duty cycle, the IPZ40N04S53R1ATMA1 dissipates approximately 1.24 W of conduction loss. Estimated: P_D = I^2 * R_DS(on) = 20^2 * 0.0031 = 1.24 W. With the PG-TSDSON-8 package theta_JA of approximately 50 C/W on a 1 oz 4-layer PCB with the exposed pad soldered to a 1 square inch copper pour, junction temperature rise above ambient is roughly 62 C. For 30 A or higher continuous loads, increase copper area or use forced-air cooling to keep Tj below the 175 C maximum rating.
Layout the PCB so the gate-drive loop (gate-driver output -> gate pin -> source pins -> gate-driver ground return) is minimized to <10 mm total loop length. Place the gate resistor and optional gate-source TVS clamp within 5 mm of pin 4. The exposed pad must be soldered to a continuous copper pour on the top and inner layers with at least 8 thermal vias (0.3 mm drill, 0.6 mm pad) to the inner ground plane to achieve the 50 C/W theta_JA quoted in the Infineon layout guidelines.
Do not drive the gate above +/-20 V V_GS - this absolute maximum rating can puncture the thin gate oxide. Always include a gate-source resistor (typically 10 kOhm) to hold the FET in a defined state during controller startup, and a gate-source TVS (e.g. 18 V SMAJ package) to absorb ringing from drain-to-gate Miller capacitance coupling during fast switching transitions. Avoid operating continuously in the linear region (V_DS > 2 V) at high current - this is outside the safe operating area and can lead to thermal runaway.
Source pins 1-3 and 5-7 are internally connected to the exposed pad. Star-ground the gate-driver return to the source pad (not to a remote system ground) to avoid source-inductance-induced gate-voltage spikes that can exceed V_GS(max). For high-frequency switching above 100 kHz, add a 1 nF ceramic bypass capacitor directly between gate and source pins to suppress RF oscillations.
Thông tin tuân thủ
AEC-Q101 qualified per Infineon datasheet; RoHS compliant Green Product; MSL1 to 260 C peak reflow; 100 % avalanche tested. Note: AEC-Q101 (automotive discrete) is referenced here, while the schema field uses the generic aec_q100 key.
