IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon
MPN: IQD005N04NM6CGATMA1 ✓ Hoạt độngIQD005N04NM6CGATMA1 Tóm tắt
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to commutate current in power-conversion circuits. Within the broader taxonomy it sits as a sub-category of discrete semiconductors → transistors → MOSFETs → power MOSFETs. OptiMOS is Infineon's proprietary trench-FET process technology, and 'OptiMOS 6' is the sixth-generation refinement targeting the lowest figure-of-merit (FOM = RDS(on) × Qg) in the 40-300 V voltage class, enabling higher switching frequency and lower conduction loss versus prior generations.
The headline parameters are: 40 V VDS(max), 0.5 mΩ RDS(on) typical, and a Source-Down 5x6 mm² TTFN footprint with bottom-side source connection that pulls heat directly into the PCB copper. This Source-Down configuration typically doubles the effective cooling area versus standard-source TOLL/TO-Leadless packages. The device supports surface-mount reflow profiles up to MSL1 (260 °C peak).
Typical applications include cordless power-tool motor drives, battery management systems (BMS) protection, low-voltage DC-DC converters in server/telecom bricks, USB-PD source and sink switches, and robotic/AGV traction inverters. The Source-Down construction is particularly valuable where PCB-bottom copper area is used as a heatsink without an additional thermal interface material.
When designing with this part, verify that PCB copper area is sized to keep TJ below 150 °C at worst-case load. The Source-Down pad layout is unique to this package - it is NOT pin-compatible with standard TOLL (which has a top-side source); substitutes must specify the same Source-Down footprint. Switching-node dv/dt layout (gate-drive loop, power-loop inductance) is critical because 0.5 mΩ devices can switch hundreds of amps in nanoseconds.
Bộ thay thế dễ dàng lắp đặt cho IQD005N04NM6CGATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IQD005N04NM6CGATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Operating Temperature Range, Package, Continuous Drain Current (ID) at TC, Drain-Source Voltage (VDS).
IQD006N04NM6
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
ISC046N13NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC058N04NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC093N15NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ024N04LS6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQD005N04NM6CGATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | OptiMOS 6 (trench FET) |
| Drain-to-Source Voltage (VDS) | 40 V |
| RDS(on) Typical | 0.5 mΩ |
| Continuous Drain Current (ID) at Ta | 58 A |
| Continuous Drain Current (ID) at Tc | 610 A |
| Power Dissipation at Ta | 3 W |
| Power Dissipation at Tc | 333 W |
| Khoảng nhiệt độ hoạt động | -55 °C to +150 °C (TJ) |
| Hộp | PG-TTFN-9-U02 (Source-Down 5x6 mm²) |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 9 |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) |
Cấu hình chân IQD005N04NM6CGATMA1
| Chân 1 | Gate — Gate drive input |
| Chân 2 | Source — Source connection (internally bonded) |
| Chân 3 | Source — Source connection (internally bonded) |
| Chân 4 | Source — Source connection (internally bonded) |
| Chân 5 | Source — Source connection (internally bonded) |
| Chân 6 | Source — Source connection (internally bonded) |
| Chân 7 | Source — Source connection (internally bonded) |
| Chân 8 | Source — Source connection (internally bonded) |
| Chân 9 | Drain — Drain connection |
Khu vực hoạt động an toàn (estimated from datasheet continuous and pulsed ratings)
Ứng dụng tiêu biểu
IQD005N04NM6CGATMA1 phù hợp cho 6 Áp dụngs: Cordless Power Tool Motor Drive, Battery Management System (BMS) Protection, Low-Voltage DC-DC Converter (Server/Telecom), USB-PD Source/Sink Switch, Robotic AGV Traction Inverter, E-Bike / E-Scooter Motor Controller.
Cordless Power Tool Motor Drive
The IQD005N04NM6CGATMA1 is purpose-built for 18 V / 20 V cordless power-tool motor drives. Its 0.5 mΩ RDS(on) at 10 V VGS keeps conduction loss below 1 W even at 45 A RMS brushless-DC phase current, while the 40 V VDS rating provides ample margin above a fully charged 20 V battery with load-dump transients. The Source-Down 5x6 mm² package pulls heat directly into the tool's main PCB copper, eliminating the heatsink used by older TO-220 or TOLL designs. Place three FETs in a three-phase bridge between the battery rail and the BLDC motor windings; expect 30-50% lower thermal resistance versus equivalent TOLL parts and a PCB area reduction of roughly 25%.
Được đề xuất
Battery Management System (BMS) Protection
In lithium-ion BMS protection circuits, the IQD005N04NM6CGATMA1 serves as the high-side or low-side disconnect switch between the battery pack and the system load. Its 58 A continuous ID and 0.5 mΩ RDS(on) support peak discharge currents typical of 10S-13S battery packs (36-48 V nominal), while the 40 V VDS provides sufficient margin for fully charged 36 V packs. The Source-Down package conducts heat into the BMS PCB copper, enabling slim-form-factor packs without discrete heatsinks. Use it in series with a current-sense resistor and a FET driver with built-in overcurrent protection for redundant safety paths.
Được đề xuất
Low-Voltage DC-DC Converter (Server/Telecom)
The IQD005N04NM6CGATMA1 functions as the synchronous rectifier (low-side FET) in 12 V-input DC-DC bricks for server and telecom rails. At switching frequencies of 300-500 kHz, the OptiMOS 6 process delivers low Qg and Qrr, minimizing switching loss and reverse-recovery spikes that would otherwise inject ringing into the output. The 0.5 mΩ RDS(on) supports continuous currents above 50 A in single-phase synchronous buck topologies, while the Source-Down 5x6 mm² package spreads heat into the bottom copper plane without thermal vias. Expect efficiency gains of 1-2% versus previous-generation 40 V MOSFETs at 500 kHz.
Được đề xuất
USB-PD Source/Sink Switch
In USB-Power-Delivery applications at 20 V / 5 A (100 W EPR), the IQD005N04NM6CGATMA1 acts as the VBUS protection and load-disconnect switch. Its 40 V VDS comfortably exceeds the 20 V USB-PD rail plus transient margin, while the 0.5 mΩ RDS(on) keeps full-load conduction loss to about 125 mW, well below thermal limits in a sealed dongle form factor. The Source-Down package routes heat into the dongle's main PCB copper, eliminating the need for an aluminum heatsink. Pair with a USB-PD controller such as FUSB302 or EZ-PD PMG1 for source-capability negotiation.
Được đề xuất
Robotic AGV Traction Inverter
The IQD005N04NM6CGATMA1 is ideal for low-voltage (24-36 V) traction inverters in autonomous guided vehicles (AGVs) and warehouse robots. The 0.5 mΩ RDS(on) minimizes I²R losses during sustained 30-50 A traction currents, while the 40 V VDS rating handles 36 V battery packs at full charge plus regen-transient overshoot. The Source-Down 5x6 mm² package enables PCB-bottom heatsinking in the robot's sealed motor compartment without fans or external heatsinks. Use three FETs per bridge in a six-pack configuration for a 3-phase BLDC hub motor, paired with reinforced-isolation gate drivers for safety isolation.
Được đề xuất
E-Bike / E-Scooter Motor Controller
In 36 V / 48 V e-bike and e-scooter motor controllers, the IQD005N04NM6CGATMA1 serves as the half-bridge switch for the BLDC hub motor driver. Its 40 V VDS provides 20% margin above a 36 V nominal battery, accepting regen transients up to 42 V without avalanche. The 0.5 mΩ RDS(on) keeps total bridge loss under 3 W at 30 A continuous phase current, allowing fanless designs. The Source-Down package pulls heat directly into the controller enclosure PCB copper, fitting the slim form factor of bicycle-controller housings. Use it in 6-FET three-phase configuration with a Hall-sensor-equipped gate driver.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IQD005N04NM6CGATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQD006N04NM6 | ISC046N13NM6ATMA1 | ISC058N04NM5ATMA1 | BSC093N15NS5ATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-U02 (5x6 mm² Source-Down) | PG-TTFN-9-U02 (5x6 mm² Source-Down) - same | PG-TTFN-9-U02 (5x6 mm² Source-Down) - same | PG-TTFN-9-U02 (5x6 mm² Source-Down) - same | PG-TTFN-9-U02 (5x6 mm² Source-Down) - same | PG-TSDSON-8 (5x6 mm² Source-Down) - verify |
| VDS (max) | 40 V | 40 V | 13 V (53 V family) | 40 V | 150 V | 40 V |
| RDS(on) Typical at 10 V | 0.5 mΩ | ~0.6 mΩ | ~1.5 mΩ | ~0.58 mΩ | ~9.3 mΩ | ~2.4 mΩ |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 |
| Source Configuration | Source-Down | Source-Down | Source-Down | Source-Down | Source-Down | Source-Down |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Lowest RDS(on) in 40 V Source-Down 5x6 mm² class (vsIQD006N04NM6)
- OptiMOS 6 technology with optimized FOM (vsISC058N04NM5ATMA1)
- Source-Down PCB heatsinking eliminates discrete heatsink (vsStandard TOLL (TO-Leadless) MOSFETs)
Ghi chú thiết kế
Estimated: At 30 A continuous drain current and 0.5 mΩ RDS(on), the steady-state conduction loss is P = I² × R = 900 × 0.0005 = 0.45 W, well within the 3 W Ta rating. However, switching losses at 100 kHz in a hard-switched half-bridge can add 1-2 W depending on duty cycle. The Source-Down package depends on PCB bottom copper for heat dissipation - a minimum of 1 oz copper pour covering 25 × 25 mm is recommended, with thermal vias to inner planes for sustained operation above 50 A.
The Source-Down PG-TTFN-9-U02 package requires the bottom thermal pad to be soldered directly to a continuous copper plane; thermal vias (12-16 of 0.3 mm diameter) under the pad are essential to conduct heat to inner copper layers. Gate-trace routing must minimize loop inductance - keep the gate drive return within 5 mm of the gate pin and use a 4-layer stackup with a dedicated gate-drive return plane. The source-sense pin (if used) should be Kelvin-connected directly at the package pad, not shared with the power source path.
Do not substitute this Source-Down package with a standard top-source TOLL MOSFET even if the datasheet RDS(on) appears similar - the pinout and PCB land pattern are incompatible. Always check the VGS(th) curve against your gate-driver voltage - at 3.3 V VGS the FET may not fully enhance, leaving it in linear region with high loss. For avalanche-rated applications, verify the datasheet's EAS rating; the IQD005N04NM6CGATMA1 is not designed for repetitive avalanche and external TVS protection is required across the drain-source path.
Thông tin tuân thủ
RoHS compliant per DigiKey listing. Not AEC-Q100 qualified - this is an industrial/consumer-grade MOSFET. Lead-free (matte tin plating) per Infineon datasheet.
