ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
MPN: ISC058N04NM5ATMA1 ✓ Hoạt độngISC058N04NM5ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between drain and source. Within the broader taxonomy, the ISC058N04NM5ATMA1 belongs to N-channel enhancement-mode MOSFETs -> power MOSFETs -> discrete semiconductors. The OptiMOS 5 process from Infineon uses trench-gate technology to minimize Rds(on) x Qg figure-of-merit, which directly translates into lower conduction and switching losses in SMPS, BLDC, and OR-ing applications.
Key specifications include VDS = 40V, Rds(on) max = 5.8 mOhm at VGS = 10V and ID = 31A, ID max = 63A at TC, VGS(th) = 3.4V (typical/normal level), and a SuperSO8 5x6 exposed-pad package for low thermal resistance. The lead-free, RoHS-compliant, MSL-rated part ships in Tape & Reel (T&R) and is qualified for industrial and consumer power-conversion designs.
Typical applications include synchronous rectification in 12V-24V DC-DC converters, BLDC motor drives, battery management systems (BMS), load switching in power distribution, and high-current USB-PD power paths. The SuperSO8 footprint is widely second-sourced, simplifying multi-vendor sourcing. When designing with this device, ensure the gate-drive voltage is at least 10V for full enhancement, place the gate-source resistor close to the GS pins to prevent inadvertent turn-on from dv/dt, and verify SOA at the operating point using the datasheet curves.
Bộ thay thế dễ dàng lắp đặt cho ISC058N04NM5ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISC058N04NM5ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
ISC015N04NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC059N04LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ024N04LS6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC040N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0902NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC058N04NM5ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 40V Normal Level |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 63 A |
| Continuous Drain Current (ID, Ta=25C) | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | 3.4 V |
| Power Dissipation (TA=25C) | 3 W |
| Power Dissipation (TC=25C) | 42 W |
| Hộp | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET |
| Khoảng nhiệt độ hoạt động | -55C to +175C |
| RoHS Compliance | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 |
| Gate Drive Level | Normal Level (10V VGS recommended) |
Cấu hình chân ISC058N04NM5ATMA1
| Chân 1 | S — Source |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | G — Gate |
| Chân 5 | S — Source |
| Chân 6 | S — Source |
| Chân 7 | S — Source |
| Chân 8 | D — Drain |
Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
ISC058N04NM5ATMA1 phù hợp cho 7 Áp dụngs: Synchronous Rectification in 12-24V DC-DC Converters, BLDC Motor Drive Half-Bridge, Battery Management System (BMS) Protection, USB-PD and High-Current Load Switch, Solar Micro-Inverter and OR-ing Diode Replacement, Automotive 12V Load Switching, Hot-Swap and In-Rush Current Limiter.
Synchronous Rectification in 12-24V DC-DC Converters
The ISC058N04NM5ATMA1 is ideal for the low-side synchronous-rectifier position in buck converters running from 12V or 24V rails. Its 5.8 mOhm Rds(on) at VGS = 10V keeps conduction loss below ~1% at 20A load, and 40V VDS provides >2x margin over a 24V bus including transient ringing. Compared to a Schottky diode replacement, the synchronous MOSFET reduces rectifier loss by 50-70% and improves thermal headroom in dense SMPS designs.
Được đề xuất
BLDC Motor Drive Half-Bridge
In brushless DC motor half-bridges for 24V tools, e-bikes, and small drones, the ISC058N04NM5ATMA1 serves as either the high-side or low-side switch. Its 63A continuous drain current supports motor peak currents up to 80A pulsed, and the SuperSO8 5x6 footprint keeps the per-switch PCB area under 30 mm^2. Designers should pair it with a 10V gate driver such as the 6EDL04N02PR and add 100k gate-source resistors to suppress dv/dt-induced turn-on.
Được đề xuất
Battery Management System (BMS) Protection
The ISC058N04NM5ATMA1 works as the high-side disconnect switch in 4S-6S Li-ion battery packs where the bus voltage stays under 24V. With 5.8 mOhm on-resistance, a 20A discharge path dissipates only 2.3W, manageable on the SuperSO8 pad with 1 oz copper. The OptiMOS 5 process gives fast body-diode reverse recovery, simplifying synchronous-rectifier dead-time design in bi-directional BMS topologies.
Được đề xuất
USB-PD and High-Current Load Switch
For USB Power-Delivery sink paths and 5V/12V/20V load switches, the ISC058N04NM5ATMA1 provides a low-loss disconnect element. At VGS = 10V, the 5.8 mOhm resistance drops only 58 mV at 10A, well within USB-PD cable regulation. The part's 40V rating covers the full 20V PD profile plus transient overshoot. Use a 10k pull-down on the gate to guarantee a defined off-state when the controller is unpowered.
Được đề xuất
Solar Micro-Inverter and OR-ing Diode Replacement
In low-voltage (<30V) solar micro-inverter or-ing stages, the ISC058N04NM5ATMA1 replaces Schottky OR-ing diodes with active MOSFET switches, cutting conduction loss by up to 80%. The 63A continuous rating supports parallel-string currents, and the SuperSO8 footprint simplifies thermal coupling to the aluminum substrate. Reverse-current blocking is implemented by sensing VDS and turning the MOSFET off when reverse voltage is detected.
Được đề xuất
Automotive 12V Load Switching
The ISC058N04NM5ATMA1 (automotive-suffix A in the part number) is suitable for 12V automotive load-switching applications such as LED drivers, body-control modules, and accessory-power distribution. Its 40V VDS absorbs load-dump transients up to 35V, and the SuperSO8 5x6 package meets automotive PCB-area constraints. When paired with an ISO 7637-2 compliant TVS, the design satisfies most OEM EMC requirements for body electronics.
Được đề xuất
Hot-Swap and In-Rush Current Limiter
In 12V/24V hot-swap controllers, the ISC058N04NM5ATMA1 acts as the series pass element that limits in-rush current when a board is inserted into a live backplane. Its 5.8 mOhm Rds(on) and 63A rating handle continuous load, while the SOA curve at 40V / 30A allows ~10 ms single-pulse operation - sufficient for typical hot-swap ramp profiles. Designers add an RC gate network to program dV/dt and an SOA-aware controller IC for protection.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISC058N04NM5ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISC015N04NM5ATMA1 | BSC059N04LSGATMA1 | BSZ024N04LS6ATMA1 | BSC040N08NS5ATMA1 | BSC0902NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same |
| VDS max | 40 V | 40 V | 40 V | 40 V | 80 V | 30 V |
| Rds(on) max @ 10V | 5.8 mOhm | 1.5 mOhm | 5.9 mOhm | 2.4 mOhm | 4.0 mOhm | 9.0 mOhm |
| Gate Threshold VGS(th) typ | 3.4 V (normal level) | 3.4 V (normal level) | 1.7 V (logic level) | 1.7 V (logic level) | 3.4 V (normal level) | 1.7 V (logic level) |
| Technology Family | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS | OptiMOS 5 | OptiMOS 5 |
Bảo phân biệt quan trọng
- Higher current rating than BSC059N04LSG at similar Rds(on) (vsBSC059N04LSGATMA1)
- Lower Rds(on) per unit cost vs older OptiMOS 3 generation (vsBSC0902NSATMA1)
- Higher VDS rating than 30V parts in same footprint (vsBSC0902NSATMA1)
Ghi chú thiết kế
Estimated: At 30 A continuous current with Rds(on) = 5.8 mOhm, conduction loss is I^2 x R = 30^2 x 0.0058 = 5.2 W. The PG-TDSON-8 FL package has a typical junction-to-ambient thermal resistance of ~50 C/W on a 1 oz 1-inch^2 copper pad, giving a junction-temperature rise of ~260 C above ambient - clearly above the 175 C maximum. For continuous 20 A+ operation, the PCB copper area must be expanded to 2-4 inch^2 on the drain pad, or the design must derate to 15 A continuous at 25 C ambient. Always consult the manufacturer SOA curves in the datasheet.
Place the gate-drive resistor (typically 10-100 ohm) within 5 mm of the gate pin to minimize parasitic-loop inductance. The SuperSO8's duplicated source pins (1-3, 5-7) MUST all be soldered to the PCB source plane to reduce source-inductance-induced voltage spikes that can cause dv/dt turn-on. Connect the thermal pad (pin 8) to a copper pour on the top layer with at least 8 thermal vias to inner-plane copper for 2 oz or heavier boards.
Do not drive the gate with a 3.3V or 5V logic signal - the ISC058N04NM5ATMA1 is normal-level (VGS(th) = 3.4V typical) and requires at least 10V VGS to achieve the rated 5.8 mOhm. Below 6V VGS the device operates in the linear region, dissipating excessive power. For 5V-only designs, choose a logic-level OptiMOS 5 such as ISC011N03L5S. Also avoid exceeding the 40V VDS rating during inductive-switching turn-off - always include a snubber or TVS clamp on the switch node.
Use a star-ground topology tying the source-return of the gate driver directly to the Kelvin source (pin 2 or pin 5, NOT the thermal pad) to avoid ground-bounce-induced gate-oxide stress. The exposed drain pad (pin 8) must carry the full load current - ensure the via array under the pad has at least 12 vias of 0.3 mm diameter to handle 30 A continuous without excessive copper heating.
Thông tin tuân thủ
RoHS compliant per Infineon product page. AEC-Q100 qualification is not separately indicated in the provided data for the standard ISC058N04NM5ATMA1 part. Halogen-free status not explicitly stated in provided data - set to unknown. Conflict-minerals compliance assumed per Infineon's standard CMRT declarations.
