IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon
부품 번호: IQD005N04NM6CGATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.21 | $22.10 |
| 100 | $1.98 | $198.00 |
| 500 | $1.78 | $890.00 |
| 1,000 | $1.62 | $1,620.00 |
IQD005N04NM6CGATMA1 개요
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to commutate current in power-conversion circuits. Within the broader taxonomy it sits as a sub-category of discrete semiconductors → transistors → MOSFETs → power MOSFETs. OptiMOS is Infineon's proprietary trench-FET process technology, and 'OptiMOS 6' is the sixth-generation refinement targeting the lowest figure-of-merit (FOM = RDS(on) × Qg) in the 40-300 V voltage class, enabling higher switching frequency and lower conduction loss versus prior generations.
The headline parameters are: 40 V VDS(max), 0.5 mΩ RDS(on) typical, and a Source-Down 5x6 mm² TTFN footprint with bottom-side source connection that pulls heat directly into the PCB copper. This Source-Down configuration typically doubles the effective cooling area versus standard-source TOLL/TO-Leadless packages. The device supports surface-mount reflow profiles up to MSL1 (260 °C peak).
Typical applications include cordless power-tool motor drives, battery management systems (BMS) protection, low-voltage DC-DC converters in server/telecom bricks, USB-PD source and sink switches, and robotic/AGV traction inverters. The Source-Down construction is particularly valuable where PCB-bottom copper area is used as a heatsink without an additional thermal interface material.
When designing with this part, verify that PCB copper area is sized to keep TJ below 150 °C at worst-case load. The Source-Down pad layout is unique to this package - it is NOT pin-compatible with standard TOLL (which has a top-side source); substitutes must specify the same Source-Down footprint. Switching-node dv/dt layout (gate-drive loop, power-loop inductance) is critical because 0.5 mΩ devices can switch hundreds of amps in nanoseconds.
드롭인 대체품: IQD005N04NM6CGATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IQD005N04NM6CGATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Operating Temperature Range, Package, Continuous Drain Current (ID) at TC, Drain-Source Voltage (VDS).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IQD006N04NM6
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
ISC046N13NM6ATMA1
✅ 드롭인✓ 재고 있음
$1.08 / 개
데이터시트 보기 →ISC058N04NM5ATMA1
✅ 드롭인✓ 재고 있음
$0.6 / 개
데이터시트 보기 →BSC093N15NS5ATMA1
✅ 드롭인✓ 재고 있음
$1.83 / 개
데이터시트 보기 →BSZ024N04LS6ATMA1
✅ 드롭인✓ 재고 있음
$0.46 / 개
데이터시트 보기 →IQD005N04NM6CGATMA1 최대 정격 & 전기적 특성
| FET Type | N-Channel |
| Technology | OptiMOS 6 (trench FET) |
| Drain-to-Source Voltage (VDS) | 40 V |
| RDS(on) Typical | 0.5 mΩ |
| Continuous Drain Current (ID) at Ta | 58 A |
| Continuous Drain Current (ID) at Tc | 610 A |
| Power Dissipation at Ta | 3 W |
| Power Dissipation at Tc | 333 W |
| 동작 온도 범위 | -55 °C to +150 °C (TJ) |
| 패키지 | PG-TTFN-9-U02 (Source-Down 5x6 mm²) |
| 실장 유형 | Surface Mount |
| 핀 수 | 9 |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) |
IQD005N04NM6CGATMA1 핀 구성
| 핀 1 | Gate — Gate drive input |
| 핀 2 | Source — Source connection (internally bonded) |
| 핀 3 | Source — Source connection (internally bonded) |
| 핀 4 | Source — Source connection (internally bonded) |
| 핀 5 | Source — Source connection (internally bonded) |
| 핀 6 | Source — Source connection (internally bonded) |
| 핀 7 | Source — Source connection (internally bonded) |
| 핀 8 | Source — Source connection (internally bonded) |
| 핀 9 | Drain — Drain connection |
안전 동작 영역 (estimated from datasheet continuous and pulsed ratings)
일반적인 애플리케이션
IQD005N04NM6CGATMA1 적합 용도: 6 애플리케이션s: Cordless Power Tool Motor Drive, Battery Management System (BMS) Protection, Low-Voltage DC-DC Converter (Server/Telecom), USB-PD Source/Sink Switch, Robotic AGV Traction Inverter, E-Bike / E-Scooter Motor Controller.
Cordless Power Tool Motor Drive
The IQD005N04NM6CGATMA1 is purpose-built for 18 V / 20 V cordless power-tool motor drives. Its 0.5 mΩ RDS(on) at 10 V VGS keeps conduction loss below 1 W even at 45 A RMS brushless-DC phase current, while the 40 V VDS rating provides ample margin above a fully charged 20 V battery with load-dump transients. The Source-Down 5x6 mm² package pulls heat directly into the tool's main PCB copper, eliminating the heatsink used by older TO-220 or TOLL designs. Place three FETs in a three-phase bridge between the battery rail and the BLDC motor windings; expect 30-50% lower thermal resistance versus equivalent TOLL parts and a PCB area reduction of roughly 25%.
추천
Battery Management System (BMS) Protection
In lithium-ion BMS protection circuits, the IQD005N04NM6CGATMA1 serves as the high-side or low-side disconnect switch between the battery pack and the system load. Its 58 A continuous ID and 0.5 mΩ RDS(on) support peak discharge currents typical of 10S-13S battery packs (36-48 V nominal), while the 40 V VDS provides sufficient margin for fully charged 36 V packs. The Source-Down package conducts heat into the BMS PCB copper, enabling slim-form-factor packs without discrete heatsinks. Use it in series with a current-sense resistor and a FET driver with built-in overcurrent protection for redundant safety paths.
추천
Low-Voltage DC-DC Converter (Server/Telecom)
The IQD005N04NM6CGATMA1 functions as the synchronous rectifier (low-side FET) in 12 V-input DC-DC bricks for server and telecom rails. At switching frequencies of 300-500 kHz, the OptiMOS 6 process delivers low Qg and Qrr, minimizing switching loss and reverse-recovery spikes that would otherwise inject ringing into the output. The 0.5 mΩ RDS(on) supports continuous currents above 50 A in single-phase synchronous buck topologies, while the Source-Down 5x6 mm² package spreads heat into the bottom copper plane without thermal vias. Expect efficiency gains of 1-2% versus previous-generation 40 V MOSFETs at 500 kHz.
추천
USB-PD Source/Sink Switch
In USB-Power-Delivery applications at 20 V / 5 A (100 W EPR), the IQD005N04NM6CGATMA1 acts as the VBUS protection and load-disconnect switch. Its 40 V VDS comfortably exceeds the 20 V USB-PD rail plus transient margin, while the 0.5 mΩ RDS(on) keeps full-load conduction loss to about 125 mW, well below thermal limits in a sealed dongle form factor. The Source-Down package routes heat into the dongle's main PCB copper, eliminating the need for an aluminum heatsink. Pair with a USB-PD controller such as FUSB302 or EZ-PD PMG1 for source-capability negotiation.
추천
Robotic AGV Traction Inverter
The IQD005N04NM6CGATMA1 is ideal for low-voltage (24-36 V) traction inverters in autonomous guided vehicles (AGVs) and warehouse robots. The 0.5 mΩ RDS(on) minimizes I²R losses during sustained 30-50 A traction currents, while the 40 V VDS rating handles 36 V battery packs at full charge plus regen-transient overshoot. The Source-Down 5x6 mm² package enables PCB-bottom heatsinking in the robot's sealed motor compartment without fans or external heatsinks. Use three FETs per bridge in a six-pack configuration for a 3-phase BLDC hub motor, paired with reinforced-isolation gate drivers for safety isolation.
추천
E-Bike / E-Scooter Motor Controller
In 36 V / 48 V e-bike and e-scooter motor controllers, the IQD005N04NM6CGATMA1 serves as the half-bridge switch for the BLDC hub motor driver. Its 40 V VDS provides 20% margin above a 36 V nominal battery, accepting regen transients up to 42 V without avalanche. The 0.5 mΩ RDS(on) keeps total bridge loss under 3 W at 30 A continuous phase current, allowing fanless designs. The Source-Down package pulls heat directly into the controller enclosure PCB copper, fitting the slim form factor of bicycle-controller housings. Use it in 6-FET three-phase configuration with a Hall-sensor-equipped gate driver.
추천
추천 제품 요약
엔지니어링 참조 데이터: IQD005N04NM6CGATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IQD006N04NM6 | ISC046N13NM6ATMA1 | ISC058N04NM5ATMA1 | BSC093N15NS5ATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-U02 (5x6 mm² Source-Down) | PG-TTFN-9-U02 (5x6 mm² Source-Down) - same | PG-TTFN-9-U02 (5x6 mm² Source-Down) - same | PG-TTFN-9-U02 (5x6 mm² Source-Down) - same | PG-TTFN-9-U02 (5x6 mm² Source-Down) - same | PG-TSDSON-8 (5x6 mm² Source-Down) - verify |
| VDS (max) | 40 V | 40 V | 13 V (53 V family) | 40 V | 150 V | 40 V |
| RDS(on) Typical at 10 V | 0.5 mΩ | ~0.6 mΩ | ~1.5 mΩ | ~0.58 mΩ | ~9.3 mΩ | ~2.4 mΩ |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 |
| Source Configuration | Source-Down | Source-Down | Source-Down | Source-Down | Source-Down | Source-Down |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
주요 차별점
- Lowest RDS(on) in 40 V Source-Down 5x6 mm² class (vs IQD006N04NM6)
- OptiMOS 6 technology with optimized FOM (vs ISC058N04NM5ATMA1)
- Source-Down PCB heatsinking eliminates discrete heatsink (vs Standard TOLL (TO-Leadless) MOSFETs)
설계 노트
Estimated: At 30 A continuous drain current and 0.5 mΩ RDS(on), the steady-state conduction loss is P = I² × R = 900 × 0.0005 = 0.45 W, well within the 3 W Ta rating. However, switching losses at 100 kHz in a hard-switched half-bridge can add 1-2 W depending on duty cycle. The Source-Down package depends on PCB bottom copper for heat dissipation - a minimum of 1 oz copper pour covering 25 × 25 mm is recommended, with thermal vias to inner planes for sustained operation above 50 A.
The Source-Down PG-TTFN-9-U02 package requires the bottom thermal pad to be soldered directly to a continuous copper plane; thermal vias (12-16 of 0.3 mm diameter) under the pad are essential to conduct heat to inner copper layers. Gate-trace routing must minimize loop inductance - keep the gate drive return within 5 mm of the gate pin and use a 4-layer stackup with a dedicated gate-drive return plane. The source-sense pin (if used) should be Kelvin-connected directly at the package pad, not shared with the power source path.
Do not substitute this Source-Down package with a standard top-source TOLL MOSFET even if the datasheet RDS(on) appears similar - the pinout and PCB land pattern are incompatible. Always check the VGS(th) curve against your gate-driver voltage - at 3.3 V VGS the FET may not fully enhance, leaving it in linear region with high loss. For avalanche-rated applications, verify the datasheet's EAS rating; the IQD005N04NM6CGATMA1 is not designed for repetitive avalanche and external TVS protection is required across the drain-source path.
규정 준수 정보
RoHS compliant per DigiKey listing. Not AEC-Q100 qualified - this is an industrial/consumer-grade MOSFET. Lead-free (matte tin plating) per Infineon datasheet.
