IQE018N06NM6SCATMA1 - 60V 1.8mΩ OptiMOS 6 N-MOSFET | Infineon
부품 번호: IQE018N06NM6SCATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.18 | $2.18 |
| 10 | $1.92 | $19.20 |
| 100 | $1.55 | $155.00 |
| 500 | $1.21 | $605.00 |
| 1,000 | $0.98 | $980.00 |
IQE018N06NM6SCATMA1 개요
What is an N-channel power MOSFET? An N-channel MOSFET is a four-terminal voltage-controlled switch (Gate, Drain, Source, Body) that conducts electrons when a positive gate-to-source voltage exceeds its threshold. Within the broader hierarchy, this device is a discrete semiconductor -> power MOSFET -> N-channel MOSFET -> silicon enhancement-mode part of Infineon's OptiMOS 6 family, optimized for low RDS(on) and high figure-of-merit (FOM = RDS(on) × Qg) for switching power-conversion applications.
Key features include a 3.3 V typical gate threshold, very low total gate charge, and Soft-switching optimization per the Infineon OptiMOS 6 datasheet. The 2.5 W power dissipation at TA and 125 W at TC provide designers with generous thermal headroom for high-current rails. Compared to OptiMOS 5, the 60 V OptiMOS 6 family offers >37% lower RDS(on) and ~25% higher FOM (Qg × RDS(on)) per Infineon's family marketing claims.
Architecture-wise, the IQE018N06NM6SC uses Infineon's latest trench-cell silicon process, balancing ultra-low on-resistance with reasonable switching performance. The PG-WHSON-8-1 package provides an exposed drain pad for superior thermal spreading, reducing thermal resistance and enabling compact high-current PCB layouts.
Typical applications include 48 V eFuse / hot-swap circuits, OR-ing FETs in telecom and server power supplies, 12 V to 48 V DC-DC converter synchronous rectification, motor-drive H-bridges, and high-current automotive load switches. The 60 V rating also leaves adequate headroom for 48 V industrial and telecom bus architectures.
When designing with this MOSFET, pay close attention to gate-drive voltage (10 V VGS recommended for full RDS(on) enhancement), PCB copper area for heatsinking, and SOA derating at high VDS / continuous ID. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: IQE018N06NM6SCATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IQE018N06NM6SCATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Operating Temperature Range, Package, Technology, Product Family.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IQE018N06NM6CGATMA1
✅ 드롭인✓ 재고 있음
$1.21 / 개
데이터시트 보기 →ISZ072N06NM6ATMA1
✅ 드롭인✓ 재고 있음
$0.38 / 개
데이터시트 보기 →ISC015N06NM5ATMA1
✅ 드롭인✓ 재고 있음
$0.62 / 개
데이터시트 보기 →NTMFS5C612NL
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SiRA80DP
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IQE018N06NM6SCATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 60 V |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 60 V |
| Continuous Drain Current (ID) at TA=25°C | 25 A |
| Continuous Drain Current (ID) at TC | 178 A |
| On-Resistance RDS(on) Max | 1.8 mΩ at VGS=10 V |
| Gate Threshold Voltage VGS(th) Typ | 3.3 V |
| Power Dissipation (TA) | 2.5 W |
| Power Dissipation (TC) | 125 W |
| 실장 유형 | Surface Mount |
| 패키지 | PG-WHSON-8-1 (5x6 mm) |
| 동작 온도 범위 | -55 °C to +175 °C (TJ) |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
IQE018N06NM6SCATMA1 핀 구성
| 핀 1 | Source — Source terminal (Kelvin source for gate return) |
| 핀 2 | Source — Source terminal |
| 핀 3 | Source — Source terminal |
| 핀 4 | Gate — Gate drive input (10 V VGS typical for full RDS(on)) |
| 핀 5 | Source — Source terminal |
| 핀 6 | Source — Source terminal |
| 핀 7 | Source — Source terminal |
| 핀 8 | Drain — Drain terminal (also exposed pad on bottom of package) |
안전 동작 영역 (DC, T_C = 25 °C)
일반적인 애플리케이션
IQE018N06NM6SCATMA1 적합 용도: 6 애플리케이션s: 48 V Telecom Hot-Swap / eFuse, OR-ing FET in Server / Telecom Power, 12 V to 48 V DC-DC Synchronous Rectification, Automotive 48 V Mild-Hybrid Load Switch, Brushless DC Motor Drive H-Bridge, Battery Management System (BMS) Protection FET.
48 V Telecom Hot-Swap / eFuse
The IQE018N06NM6SCATMA1 is a strong fit for 48 V telecom hot-swap and eFuse circuits where its 60 V VDS rating provides a comfortable margin above the 48 V nominal bus, and its 1.8 mΩ RDS(on) limits steady-state conduction loss to under 1 W at 25 A. Used as the main pass element behind a hot-swap controller like the LM5060 or ADM1270, it allows inrush limiting via gate ramping while keeping the forward voltage drop low. The 178 A TC current rating supports brief inrush transients during PCB insertion into a live backplane, while the PG-WHSON-8-1's exposed drain pad conducts heat directly into the PCB copper for thermal spreading. Compared to OptiMOS 5 parts, the OptiMOS 6 generation offers >37% lower RDS(on), directly reducing heat dissipation and improving system efficiency.
추천
OR-ing FET in Server / Telecom Power
For redundant 48 V or 12 V power-supply OR-ing, the IQE018N06NM6SCATMA1's ultra-low 1.8 mΩ RDS(on) directly minimizes forward voltage drop during normal operation — at 30 A the drop is only ~54 mV, reducing power loss to ~1.6 W per OR-ing FET. The 60 V VDS provides ample margin against load-dump transients in automotive or industrial 48 V buses. Fast turn-off behavior from the OptiMOS 6 process isolates a failed supply within microseconds, preventing back-feeding into the redundant rail. The PG-WHSON-8-1 package's low thermal resistance supports continuous high-current operation on a standard 4-layer PCB. Place the FET in the return path of the diode-OR topology with a controller providing fast gate pull-down for reverse-current blocking.
추천
12 V to 48 V DC-DC Synchronous Rectification
The IQE018N06NM6SCATMA1 serves as the low-side or high-side synchronous rectifier in isolated or non-isolated 48 V DC-DC converter topologies. Its 1.8 mΩ RDS(on) and low Qg figure-of-merit translate directly into higher converter efficiency at the 200 kHz to 1 MHz switching frequencies typical of 48 V telecom and server bus converters. At 30 A continuous secondary-side current, conduction loss in the synchronous FET is under 5 W, manageable on a PG-WHSON-8-1 footprint with adequate copper area. The 60 V rating provides safe operation in 48 V nominal systems with up to 10 V transient overshoot. Pair with a digital or analog PWM controller such as the UCC25640x family or Infineon's EiceDriver 2EDN series for full-bridge or active-clamp forward topologies.
추천
Automotive 48 V Mild-Hybrid Load Switch
In 48 V mild-hybrid automotive systems, the IQE018N06NM6SCATMA1 functions as a high-current load switch for auxiliary loads such as electric turbochargers, active suspension, and e-chassis actuators. The 60 V VDS rating covers the 48 V bus plus load-dump transients up to 60 V, while the 1.8 mΩ RDS(on) keeps conduction loss under 2.5 W at 40 A continuous load — a critical figure for thermal management in the engine bay. The PG-WHSON-8-1's 5x6 mm footprint supports compact module designs. For AEC-Q101-qualified variants of this OptiMOS 6 die, request the AQ-suffix MPN from Infineon. Pair with a high-side gate driver such as the BTS5008-1EKA or a low-side driver from the 2EDN family.
추천
Brushless DC Motor Drive H-Bridge
The IQE018N06NM6SCATMA1 is well-suited as the low-side or high-side switch in BLDC motor-drive H-bridges for industrial and e-mobility applications up to 60 V / 25 A continuous per phase. Its 1.8 mΩ RDS(on) minimizes I²R losses during PWM operation, while the 60 V rating supports 48 V battery packs and 24 V industrial servo drives with margin for back-EMF transients. The PG-WHSON-8-1's exposed drain pad simplifies PCB thermal design — a 2 oz copper pour on a 4-layer board keeps the junction temperature rise under 50 °C at 25 A continuous. Pair with a three-phase gate driver such as the TLE9180D-32QK or 6EDL04N02PR for sensorless or sensored FOC control.
추천
Battery Management System (BMS) Protection FET
In a 48 V lithium-ion or LiFePO4 battery management system, the IQE018N06NM6SCATMA1 functions as the charge/discharge protection FET at the pack output. Its 1.8 mΩ RDS(on) reduces steady-state loss during high-current discharge — at 50 A continuous discharge, the pack-level loss is ~5 W, well within BMS thermal budgets. The 60 V VDS rating covers a 48 V nominal pack plus full charge voltage overshoot during regenerative braking. Use two IQE018N06NM6SCATMA1 parts in back-to-back (source-to-source) configuration with separate gate control for true bidirectional blocking, or use a single FET in the high-side with an ideal-diode controller for simplified BMS protection.
추천
추천 제품 요약
엔지니어링 참조 데이터: IQE018N06NM6SCATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IQE018N06NM6CGATMA1 | ISZ072N06NM6ATMA1 | ISC015N06NM5ATMA1 | NTMFS5C612NL | SiRA80DP |
|---|---|---|---|---|---|---|
| Package | PG-WHSON-8-1 (5x6 mm) | PG-WHSON-8-1 (5x6 mm) - same | PG-WHSON-8-1 (5x6 mm) - same | PG-WHSON-8-1 (5x6 mm) - same | SO-8FL (5x6 mm) - pin-compatible footprint | PowerPAK SO-8 (5x6 mm) - pin-compatible footprint |
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| RDS(on) max @ VGS=10V | 1.8 mΩ | 1.8 mΩ | 7.2 mΩ (+300%) | 1.5 mΩ (-17%) | 1.8 mΩ (same) | 1.9 mΩ (+6%) |
| Generation / Process | OptiMOS 6 | OptiMOS 6 (CG variant) | OptiMOS 6 | OptiMOS 5 | onsemi N-channel Trench | Vishay TrenchFET Gen IV |
| Approx Unit Price @ 1000pcs (USD, 2026-09-15) | 0.98 | 1.05 | 0.85 | 1.10 | 0.92 | 1.25 |
주요 차별점
- Lowest RDS(on) in Infineon OptiMOS 6 60 V PG-WHSON-8-1 family (vs ISC015N06NM5ATMA1 (OptiMOS 5))
- Drop-in same-package alternative within Infineon OptiMOS 6 60 V (vs IQE018N06NM6CGATMA1)
- Comparable cross-brand drop-in at lower cost (vs NTMFS5C612NL (onsemi))
설계 노트
Estimated: At VDS=48 V nominal, ID=30 A continuous, and RDS(on)=1.8 mΩ, the steady-state conduction loss is approximately P=I²R = 30² × 0.0018 ≈ 1.62 W. With PG-WHSON-8-1 typical thermal resistance θJA around 50 °C/W on a 1 oz 4-layer PCB with 1 sq inch copper pour, the junction temperature rise is ~80 °C above ambient, allowing safe operation up to ~95 °C ambient. For 50 A continuous operation, expect ~4.5 W dissipation requiring ~2 sq inches of copper or a small heatsink.
Design the PG-WHSON-8-1 land pattern to expose the bottom drain pad to a continuous copper pour on the top layer, with thermal vias (typically 9-16 vias of 0.3 mm drill) stitching the pad to inner-layer copper ground planes. Source pins 1-3, 5-7 should tie together with short, wide traces to minimize source inductance. Place the gate drive return (Kelvin source) on pin 1 or pin 8 directly back to the gate-driver ground, NOT through the high-current source path, to avoid gate-drive ringing.
Minimize the gate-drive loop area by placing the gate driver within 5 mm of the gate pin, with gate series resistor (typically 10-47 Ω) close to the driver output. For switching frequencies above 100 kHz, add a small gate-source pull-down resistor (10-100 kΩ) to keep the FET off during controller start-up. Use a 100 V-rated, 100 nF ceramic bypass capacitor directly across the drain-source of each synchronous FET in half-bridge topologies to suppress voltage ringing from parasitic inductance.
Do NOT operate the IQE018N06NM6SCATMA1 at VGS below 6 V at full load — the RDS(on) curve rises sharply below 6 V, defeating the 1.8 mΩ spec which is specified at VGS=10 V. In low-side applications, ensure the gate-driver ground returns to pin 1 (Kelvin source) not the high-current source trace, otherwise the Miller current will induce false turn-off. Verify SOA at the intended VDS / ID operating point before paralleling multiple FETs — current sharing depends on matched RDS(on) and thermal coupling.
규정 준수 정보
RoHS compliant and lead-free per Infineon product page; standard SCATMA1 suffix is non-automotive grade; AEC-Q101 qualified variants available with 'AQ' suffix ordering code. Halogen-free per JEDEC JS709B standard.
