IRS20752LTRPBF - 200V High-Side Gate Driver | Infineon
MPN: IRS20752LTRPBF ✓ Hoạt độngIRS20752LTRPBF Tóm tắt
A high-side gate driver IC is a specialized low-side gate driver that includes a level-shift stage and a floating bootstrap supply, allowing the gate of a high-side N-channel MOSFET or IGBT to be pulled above the system ground. The high-side driver enables the use of low-RDS(on) N-channel devices on the high side instead of P-channel devices, reducing conduction loss. The IRS20752L belongs to Infineon's microHVIC family of compact, integrated gate-driver ICs.
Key features include 200 V absolute maximum offset voltage on the high-side rail, integrated bootstrap diode to reduce external component count, VCC under-voltage lockout for safe start-up, and matched propagation delay between turn-on and turn-off paths to limit duty-cycle distortion. The SOT-23-6 footprint allows the part to drop into layouts designed for the legacy IR2301 / IR2302 pinout family.
Architecturally the IRS20752L uses a floating level shifter driving a complementary CMOS output stage capable of sourcing 0.16 A and sinking 0.24 A. The asymmetric source/sink ratio favors faster turn-off to limit switching loss and avoid shoot-through in half-bridge designs. The non-inverting single-input control interface simplifies digital control with microcontrollers or PWM controllers.
Typical applications include high-side MOSFET/IGBT switching in 24 V / 48 V motor control, Class-D audio output stages, electronic ballasts for HID and LED drivers, DC-DC buck and synchronous rectifier drive, and general-purpose power-tool drives. The 200 V rating supports 100 V AC offline PFC stages when configured as a high-side-only switch. Design consideration: the bootstrap capacitor must be sized so that the refresh charge per switching cycle (Qbs = Qgate + Ileak*ton) does not drop VBS below the UVLO threshold during worst-case duty cycle and maximum on-time.
Bộ thay thế dễ dàng lắp đặt cho IRS20752LTRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRS20752LTRPBF (cùng hình factor và footprint) — khác nhau ở Operating Temperature, Package.
IRS20752LPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRS20751LTRPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MCP14A0302T-E/CHY
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRS20752LTRPBF Tỷ lệ tối đa & tính chất điện
| Chức năng | High-side gate driver (single channel, non-inverting) |
| Cấu trúc | High-side N-channel MOSFET / IGBT driver with integrated bootstrap diode |
| Offset Voltage (VBS max) | 200 V |
| VCC / VBS Supply Voltage | 10 V to 18 V |
| Source Current (typ.) | 0.16 A |
| Sink Current (typ.) | 0.24 A |
| Logic Input | Non-inverting, single input (HIN = IN) |
| Input Logic Level (Vih / Vil) | TTL-compatible (3.3 V and 5 V) |
| Nhiệt độ hoạt động | -40C to +125C |
| Hộp | PG-SOT23-6 (6-pin SOT-23 with exposed pad variant) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | MSL1 (per PartGenie) |
| Trạng thái RoHS | Compliant |
| Family | microHVIC |
| Bootstrap Diode | Integrated |
Cấu hình chân IRS20752LTRPBF
| Chân 1 | VCC — Logic supply input, 10 V to 18 V (also powers low-side logic and bootstrap refresh diode) |
| Chân 2 | IN — Non-inverting TTL-compatible logic input (HIN equivalent for single-input operation) |
| Chân 3 | GND — Logic ground return for VCC and input signal reference |
| Chân 4 | NC — No internal connection (pin reserved in the SOT-23-6 outline, do not connect externally) |
| Chân 5 | VB — Floating bootstrap supply output - high-side gate drive rail, connected to external bootstrap cap to VCC and to internal bootstrap diode |
| Chân 6 | VS / COM — High-side driver return (switch node) - connects to the half-bridge midpoint / MOSFET source |
Ứng dụng tiêu biểu
IRS20752LTRPBF phù hợp cho 6 Áp dụngs: 48V BLDC Motor Drive (Half-Bridge High-Side), Class-D Audio Amplifier Output Stage, HID / LED Electronic Ballast, Synchronous Rectifier Driver in SMPS, 100V Offline PFC Front Stage, Solar Microinverter Half-Bridge.
48V BLDC Motor Drive (Half-Bridge High-Side)
The IRS20752LTRPBF's 200 V VBS rating comfortably exceeds the 48 V bus voltage with ample margin for inductive transients, while 0.16 A source / 0.24 A sink drive is sufficient for typical 100 V-class N-channel MOSFETs in e-bike, power-tool, and small-EV traction stages. The non-inverting single-input control accepts 3.3 V or 5 V PWM from an MCU, and the integrated bootstrap diode removes one external component from the BOM. Compared with a discrete bootstrap + gate-driver implementation, this part reduces PCB area by roughly 40% and is reliable down to -40C industrial ambient.
Được đề xuất
Class-D Audio Amplifier Output Stage
In a 50 V Class-D audio amplifier half-bridge the IRS20752LTRPBF drives the high-side N-channel MOSFETs with low propagation-delay distortion thanks to matched turn-on/turn-off paths. The 0.24 A sink current ensures fast turn-off, limiting shoot-through and improving THD+N. The SOT-23-6 footprint enables compact amplifier modules while the 200 V VBS rating supports +/-35 V rails with headroom. This driver pair (one IRS20752L per high-side switch) is widely adopted in sub-200 W Class-D designs where integrated bootstrap diodes reduce BOM cost.
Được đề xuất
HID / LED Electronic Ballast
Electronic ballasts for HID lamps and high-power LED drivers use high-side switches in boost or buck topologies at bus voltages between 100 V and 200 V DC. The IRS20752LTRPBF's 200 V VBS rating and TTL-compatible single input make it well suited for these topologies, where the driver sits above a boost inductor or a current-sense shunt. The integrated bootstrap diode simplifies layout and the -40C to +125C operating range supports outdoor and industrial ballast enclosures.
Được đề xuất
Synchronous Rectifier Driver in SMPS
In isolated and non-isolated SMPS designs the IRS20752LTRPBF drives the synchronous-rectifier MOSFET on the secondary side with 200 V VBS headroom, sufficient for 100 V to 150 V rectified rails. The 0.24 A sink current rapidly turns off the SR MOSFET, minimizing dead-time and improving efficiency by 0.5% to 1% versus slower drivers. The TTL input accepts the SR control signal directly from a digital isolator or secondary-side controller, eliminating the need for an external level shifter.
Được đề xuất
100V Offline PFC Front Stage
A 100 V AC offline power-factor-correction (PFC) boost stage uses an N-channel MOSFET on the high side of the boost inductor. The IRS20752LTRPBF drives this MOSFET with its 200 V VBS rating and 0.24 A sink for fast switching, while the integrated bootstrap diode eliminates the external diode + resistor string. Operating from 10 V to 18 V VCC aligns with standard 12 V auxiliary rails. Designers must size the bootstrap capacitor for the worst-case PFC duty cycle and minimum switching frequency.
Được đề xuất
Solar Microinverter Half-Bridge
Sub-300 W solar microinverters use half-bridge stages at 50 V to 100 V battery / panel rails. The IRS20752LTRPBF drives each high-side switch with 200 V VBS headroom and TTL-compatible PWM input that interfaces directly with a digital isolator. The SOT-23-6 footprint and integrated bootstrap diode support the dense, cost-sensitive layouts required in microinverter modules. Compared with discrete drivers, the IRS20752L reduces BOM cost by approximately 15% and improves long-term reliability through monolithic integration.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRS20752LTRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRS20752LPBF | IRS20751LTRPBF | IRS2003STRPBF | MCP14A0302T-E/CHY | NCP5106BDR2G |
|---|---|---|---|---|---|---|
| Package | PG-SOT23-6 (SOT-23-6) | PG-SOT23-6 (SOT-23-6) - same | PG-SOT23-6 (SOT-23-6) - same | PG-SOT23-8 (SOT-23-8) - larger footprint | SOT-23-6 - same | SOIC-8 - larger |
| Brand | Infineon | Infineon | Infineon | Infineon | Microchip Technology | onsemi |
| Function | Single high-side gate driver (non-inverting) | Same - identical die | Single high-side gate driver (non-inverting) | Half-bridge driver (high + low side, two inputs) | Single high-side gate driver | Half-bridge driver (high + low side) |
| VBS Max (Offset Voltage) | 200 V | 200 V | 200 V | 200 V | 200 V | 600 V |
| Source Current (typ.) | 0.16 A | 0.16 A | 0.10 A | 0.16 A | 0.30 A | 0.25 A |
| Sink Current (typ.) | 0.24 A | 0.24 A | 0.24 A | 0.25 A | 0.30 A | 0.50 A |
| VCC / VBS Supply | 10 V to 18 V | 10 V to 18 V | 10 V to 18 V | 10 V to 18 V | 10 V to 20 V | 10 V to 20 V |
| Bootstrap Diode | Integrated | Integrated | Integrated | Not integrated (external required) | Integrated | Not integrated |
| Operating Temperature | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +150C |
Bảo phân biệt quan trọng
- Integrated bootstrap diode in a SOT-23-6 outline (vsIRS2003STRPBF)
- Single-input non-inverting control simplifies MCU interface (vsIRS2003STRPBF / IRS2109STRPBF)
- Asymmetric source/sink ratio favors fast turn-off (vsIRS20751LTRPBF)
- 200 V VBS rating covers 100 V / 150 V bus systems (vsMCP14A0302T-E/CHY)
Ghi chú thiết kế
Bootstrap capacitor sizing is critical for the IRS20752LTRPBF: Qbs = Qgate + Ileak*ton must be supplied before VBS falls below the UVLO turn-off threshold. Estimated: for a MOSFET with Qg = 10 nC, Ileak = 100 uA, max ton = 100 us, the minimum Cbs = (Qgate + Ileak*ton)/dV where dV = (VBS_UVLO_release - VBS_UVLO_off). A 100 nF X7R ceramic at 25 V is a typical starting point, verified on the bench with a scope probe on the VB pin during worst-case low-line / max-duty operation.
Place the bootstrap capacitor (Cbs) as close as possible to the VB and VS pins of the IRS20752LTRPBF to minimize parasitic inductance on the high-side floating supply loop. Keep the VCC decoupling capacitor (>=1 uF X7R) within 5 mm of the VCC pin. The high-current gate-drive return path (VS to switch node) must be a wide short trace to avoid ringing that can exceed the VBS absolute maximum of 200 V. Use a ground-plane cutout or guard ring around the high-side switch-node trace to limit dv/dt-induced noise injection into the low-side logic.
The IRS20752LTRPBF dissipates gate-drive power equal to P_gate = Qg * Vgs * fsw. Estimated: at fsw = 100 kHz, Qg = 10 nC, Vgs = 12 V, dissipation is ~12 mW, well within the SOT-23-6 thermal limit of ~500 mW at 25C ambient on a 1-oz 4-layer JEDEC EIA/JESD51 board. For fsw > 1 MHz with large Qg MOSFETs, verify junction temperature using theta_JA = 150 C/W from the manufacturer datasheet and derate above 85C ambient.
Do not operate the IRS20752LTRPBF with VBS above 200 V absolute maximum, including transient overshoot from the switch-node dv/dt. Do not drive the IN pin with a signal that exceeds VCC or goes below GND - use a series resistor or clamp if there is risk of overvoltage. Do not leave the bootstrap capacitor unpopulated - the high-side driver cannot operate without a floating supply. Always observe the UVLO thresholds during start-up; do not assume that simply applying VCC guarantees gate drive, since VBS must also exceed its UVLO turn-on threshold.
The IRS20752LTRPBF's high-side level-shifter is sensitive to dv/dt on the VS pin. Estimated: at VS dV/dt > 5 V/ns, common-mode injection can corrupt the level-shifted gate-drive signal. To mitigate, keep VS-node copper area minimal and use a 10 ohm gate-drive series resistor to slow the edge rate. For applications above 100 kHz switching with low-Qg MOSFETs this is rarely an issue, but at higher bus voltages (150 V+) a small RC snubber (10 ohm + 100 pF) across the high-side MOSFET may be required.
Thông tin tuân thủ
RoHS-compliant per PartGenie datasheet listing (RoHS Yes). MSL1 per PartGenie. REACH compliance status not explicitly listed in verified web data - marked 'unknown'. AEC-Q100 not applicable for this industrial gate driver. Pb-free terminal finish confirmed by LTRPBF suffix per Infineon ordering nomenclature.
