1EDB8275FXUMA1 - 5.4/9.8A Isolated Gate Driver | Infineon
MPN: 1EDB8275FXUMA1 ✓ Hoạt động1EDB8275FXUMA1 Tóm tắt
What is an isolated gate driver? An isolated gate driver is a power-management semiconductor that transfers switching commands from a low-voltage controller to the gate of a high-voltage power transistor (typically an IGBT, MOSFET, or SiC/GaN device) while maintaining galvanic isolation between input and output. Isolated gate drivers sit within the broader power management IC family and are essential building blocks for high-voltage inverters, motor drives, and switched-mode power supplies where safety isolation and high dV/dt noise immunity are mandatory.
The 1EDB8275F family supports supply voltages of up to 40 V on the output side and operates with +6/-4 ns propagation delay matching between channels in dual variants. It is designed for fast-switching silicon carbide (SiC) and gallium nitride (GaN) transistors in high-frequency power-conversion stages. According to the Infineon datasheet, the device integrates input-side and output-side undervoltage lockout (UVLO), short-circuit clamping, and active Miller clamp options.
Typical applications include solar inverters, electric vehicle (EV) onboard chargers, industrial servo drives, and high-density telecom rectifiers. The wide creepage/clearance of the PG-DSO-8 wide-body package supports reinforced insulation per IEC 60747-17, simplifying safety certification of end equipment.
When designing with this device, ensure that the bootstrap supply or isolated DC/DC converter provides sufficient gate-drive headroom for the chosen power switch. Decoupling capacitors must be placed close to VCC and VBS pins to suppress switching noise, and the gate-drive loop inductance must be minimized to avoid ringing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes beyond the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho 1EDB8275FXUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với 1EDB8275FXUMA1 (cùng hình factor và footprint) — khác nhau ở Package, Operating Temperature Range, Peak Sink Current, Peak Source Current, Configuration.
1EDB8275FXTMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
1EDB7275FXUMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →1EDN8511BXUSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2EDN7534FXTMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1ED3323MC12NXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2ED2183S06FXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1EDB8275FXUMA1 Tỷ lệ tối đa & tính chất điện
| Chức năng | Single-channel isolated gate driver |
| Number of Channels | 1 |
| Isolation Type | Magnetic coupling (coreless transformer) |
| Isolation Voltage (Vrms) | 3000 Vrms |
| Peak Source Current (typ.) | 5.4 A |
| Peak Sink Current (typ.) | 9.8 A |
| CMTI (min.) | 300 V/ns |
| Output-side Supply Voltage | Up to 40 V (per datasheet family) |
| UVLO | Yes (input and output side) |
| Miller Clamp | Available in family |
| Hộp | PG-DSO-8 (150 mil wide-body) |
| Khoảng nhiệt độ hoạt động | -40 C to +125 C (industrial) |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
Cấu hình chân 1EDB8275FXUMA1
| Chân 1 | VDD1 — Input-side supply voltage |
| Chân 2 | GND1 — Input-side ground (logic reference) |
| Chân 3 | IN+ — Non-inverting PWM input |
| Chân 4 | IN- — Inverting PWM input (or tied to GND1 for non-inverting only) |
| Chân 5 | GND2 — Output-side ground (power reference) |
| Chân 6 | VDD2 — Output-side supply voltage (gate-drive rail) |
| Chân 7 | OUT — Gate-drive output to power switch gate |
| Chân 8 | NC — Not connected (per datasheet) |
Ứng dụng tiêu biểu
1EDB8275FXUMA1 phù hợp cho 6 Áp dụngs: Solar Inverter Primary-Side Gate Driving, EV Onboard Charger Totem-Pole PFC, Industrial Servo Drive IGBT Bridge, Telecom Rectifier and Server PSU, Renewable Energy Microinverter, Industrial Welding and Plasma Power.
Solar Inverter Primary-Side Gate Driving
The 1EDB8275FXUMA1 is well-matched to solar-string inverter primary-side gate driving for IGBT and SiC boost/PFC stages. Its 3000 Vrms galvanic isolation supports the reinforced insulation required between the low-voltage DSP/MCU and the high-voltage DC-link switch node, while 300 V/ns CMTI ensures signal integrity at dV/dt values typical of 1200 V SiC modules. The 5.4 A source / 9.8 A sink currents let designers drive 1200 V SiC MOSFETs at switching frequencies of 50-100 kHz without an external booster. Place the driver within 2 cm of the power switch to minimize gate-loop inductance, and use a 4.7 uF X7R decoupling capacitor close to the VCC2 pin.
Được đề xuất
EV Onboard Charger Totem-Pole PFC
In a 22 kW onboard charger totem-pole PFC stage, the 1EDB8275FXUMA1 drives 650 V or 1200 V GaN HEMTs with sub-10 ns propagation delay and 300 V/ns CMTI tolerance. Its PG-DSO-8 wide-body 150 mil package provides the creepage and clearance distances required for reinforced insulation under IEC 60747-17, simplifying end-equipment safety certification. The high sink-current capability (9.8 A) prevents Miller-induced turn-on in half-bridge configurations, a common failure mode in high-density GaN designs. Designers should pair the driver with a low-inductance gate resistor network (typically 2-10 ohm) and a local 100 nF + 4.7 uF decoupling stack.
Được đề xuất
Industrial Servo Drive IGBT Bridge
The 1EDB8275FXUMA1 is a strong fit for industrial servo drives where 600 V/1200 V IGBT modules operate at 8-20 kHz. Its 3000 Vrms isolation supports the reinforced insulation required between the safe-voltage control side and the hazardous-voltage DC bus, while the 300 V/ns CMTI rating tolerates the high dV/dt events of hard-switched IGBT commutation. According to the Infineon datasheet, the driver's input-side UVLO and output-side UVLO provide fault-tolerant behavior during bus undervoltage conditions. Designers can share the same driver footprint across 600 V and 1200 V IGBT modules by changing only the gate resistor value.
Được đề xuất
Telecom Rectifier and Server PSU
For high-density 48 V telecom rectifiers and CRPS server PSUs, the 1EDB8275FXUMA1 drives the primary-side switches of a totem-pole PFC or dual-active-bridge converter. The PG-DSO-8 wide-body package fits the dense layouts common in 1U/2U power supplies, and the 5.4 A peak source current supports 100 V/650 V GaN switches at switching frequencies of 200-500 kHz. The 300 V/ns CMTI ensures robust operation across the wide load transients of dynamic server workloads. Place the driver adjacent to the GaN switch and use a 4-layer PCB with a dedicated ground plane to minimize EMI.
Được đề xuất
Renewable Energy Microinverter
Microinverters attached to individual photovoltaic panels require a compact isolated gate driver that can deliver high drive currents at low cost per watt. The 1EDB8275FXUMA1 meets these needs with 5.4 A / 9.8 A peak drive, 3000 Vrms isolation, and a small PG-DSO-8 wide-body footprint. Its 300 V/ns CMTI is sufficient for the 600 V/1200 V SiC MOSFETs used in modern microinverter designs. The driver's industrial -40 C to +125 C operating range supports outdoor solar installations without additional thermal management. Use a bootstrap or isolated DC/DC supply to power the output-side VCC rail.
Được đề xuất
Industrial Welding and Plasma Power
Industrial welding and plasma-cutting power supplies require isolated gate drivers that can survive the harsh dV/dt of arc-load transients. The 1EDB8275FXUMA1's 300 V/ns CMTI and 3000 Vrms isolation make it a strong candidate for the primary-side IGBT driver in such equipment. Its high sink current (9.8 A) ensures robust turn-off under Miller-induced dv/dt events, while the wide-body package's creepage supports the pollution-degree-2 environment typical of industrial enclosures. Designers should add a small RC snubber across the IGBT to limit voltage overshoot and reduce EMI radiated emissions.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho 1EDB8275FXUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | 1EDB8275FXTMA1 | 1EDB7275FXUMA1 | 1EDN8511BXUSA1 | 2EDN7534FXTMA1 | 1ED3323MC12NXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-8 (150 mil wide-body) | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same |
| Channel Count | 1 | 1 | 1 | 1 | 2 | 1 | 2 (half-bridge) |
| Isolation Voltage (Vrms) | 3000 Vrms | 3000 Vrms | 3000 Vrms | Non-isolated | Non-isolated | 3000+ Vrms (functional-reinforced) | Non-isolated |
| Topology | Single low-side, isolated | Single low-side, isolated | Single low-side, isolated | Single low-side, non-isolated | Dual low-side, non-isolated | Single, isolated EiceIVER | Half-bridge, non-isolated |
Bảo phân biệt quan trọng
- Highest CMTI in PG-DSO-8 wide-body family (vs1ED3323MC12NXUMA1)
- Galvanic isolation built in (vs2EDN7534FXTMA1)
- Asymmetric high source/sink drive strength (vs1EDN8511BXUSA1)
Ghi chú thiết kế
Place the 1EDB8275FXUMA1 within 2 cm of the power switch's gate pin to minimize gate-loop inductance. Use a 4-layer PCB with a continuous ground plane on layer 2 directly under the driver; keep input-side and output-side grounds isolated and connect them only at the driver's GND1/GND2 pins. A 100 nF X7R capacitor plus a 4.7 uF X7R bulk capacitor must be placed within 5 mm of the VDD2 pin to suppress switching-noise-induced UVLO trips.
Estimated: at 100 kHz switching with 5 nC Qg and 18 V VDD2, gate-drive losses are approximately 0.9 W per channel (P_gate = Qg * Vgs * fsw). The PG-DSO-8 wide-body package has a theta_JA of approximately 110 C/W on a 4-layer JEDEC test board, so the junction rises about 100 C above ambient at full power. For continuous operation above 100 kHz, place thermal vias under the exposed pad of the PG-DSO-8 footprint and use at least 1 square inch of top-side copper pour.
Do not connect input-side ground (GND1) to output-side ground (GND2) anywhere except at the driver's pins; an external bridge defeats the galvanic isolation and creates a safety hazard. The IN- pin must not be left floating - tie it to GND1 or drive it with a complementary PWM signal, depending on logic convention. Finally, verify that the bootstrap or isolated DC/DC supply can source the 5.4 A peak transient without droop; an undersized supply causes VDD2 UVLO events and erratic switching.
Thông tin tuân thủ
RoHS and REACH compliance per Infineon product page. Halogen-free per Infineon datasheet. AEC-Q100 status not confirmed in provided data - confirm with Infineon for automotive applications.
