IRS20752LTRPBF - 200V High-Side Gate Driver | Infineon
MPN: IRS20752LTRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.05 | $1.05 |
| 10 | $0.95 | $9.50 |
| 100 | $0.78 | $78.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.51 | $510.00 |
Drop-in alternatives for IRS20752LTRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS20752LPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS20751LTRPBF
β Drop-Inπ Reference alternative (not in catalog)
MCP14A0302T-E/CHY
β Drop-Inπ Reference alternative (not in catalog)
IRS20752LTRPBF Maximum Ratings & Electrical Characteristics
| Function | High-side gate driver (single channel, non-inverting) |
| Topology | High-side N-channel MOSFET / IGBT driver with integrated bootstrap diode |
| Offset Voltage (VBS max) | 200 V |
| VCC / VBS Supply Voltage | 10 V to 18 V |
| Source Current (typ.) | 0.16 A |
| Sink Current (typ.) | 0.24 A |
| Logic Input | Non-inverting, single input (HIN = IN) |
| Input Logic Level (Vih / Vil) | TTL-compatible (3.3 V and 5 V) |
| Operating Temperature | -40C to +125C |
| Package | PG-SOT23-6 (6-pin SOT-23 with exposed pad variant) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (per PartGenie) |
| RoHS Status | Compliant |
| Family | microHVIC |
| Bootstrap Diode | Integrated |
IRS20752LTRPBF Pin Configuration
| Pin 1 | VCC β Logic supply input, 10 V to 18 V (also powers low-side logic and bootstrap refresh diode) |
| Pin 2 | IN β Non-inverting TTL-compatible logic input (HIN equivalent for single-input operation) |
| Pin 3 | GND β Logic ground return for VCC and input signal reference |
| Pin 4 | NC β No internal connection (pin reserved in the SOT-23-6 outline, do not connect externally) |
| Pin 5 | VB β Floating bootstrap supply output - high-side gate drive rail, connected to external bootstrap cap to VCC and to internal bootstrap diode |
| Pin 6 | VS / COM β High-side driver return (switch node) - connects to the half-bridge midpoint / MOSFET source |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IRS20752LTRPBF is suitable for 6 applications: 48V BLDC Motor Drive (Half-Bridge High-Side), Class-D Audio Amplifier Output Stage, HID / LED Electronic Ballast, Synchronous Rectifier Driver in SMPS, 100V Offline PFC Front Stage, Solar Microinverter Half-Bridge.
48V BLDC Motor Drive (Half-Bridge High-Side)
The IRS20752LTRPBF's 200 V VBS rating comfortably exceeds the 48 V bus voltage with ample margin for inductive transients, while 0.16 A source / 0.24 A sink drive is sufficient for typical 100 V-class N-channel MOSFETs in e-bike, power-tool, and small-EV traction stages. The non-inverting single-input control accepts 3.3 V or 5 V PWM from an MCU, and the integrated bootstrap diode removes one external component from the BOM. Compared with a discrete bootstrap + gate-driver implementation, this part reduces PCB area by roughly 40% and is reliable down to -40C industrial ambient.
Recommended
Class-D Audio Amplifier Output Stage
In a 50 V Class-D audio amplifier half-bridge the IRS20752LTRPBF drives the high-side N-channel MOSFETs with low propagation-delay distortion thanks to matched turn-on/turn-off paths. The 0.24 A sink current ensures fast turn-off, limiting shoot-through and improving THD+N. The SOT-23-6 footprint enables compact amplifier modules while the 200 V VBS rating supports +/-35 V rails with headroom. This driver pair (one IRS20752L per high-side switch) is widely adopted in sub-200 W Class-D designs where integrated bootstrap diodes reduce BOM cost.
Recommended
HID / LED Electronic Ballast
Electronic ballasts for HID lamps and high-power LED drivers use high-side switches in boost or buck topologies at bus voltages between 100 V and 200 V DC. The IRS20752LTRPBF's 200 V VBS rating and TTL-compatible single input make it well suited for these topologies, where the driver sits above a boost inductor or a current-sense shunt. The integrated bootstrap diode simplifies layout and the -40C to +125C operating range supports outdoor and industrial ballast enclosures.
Recommended
Synchronous Rectifier Driver in SMPS
In isolated and non-isolated SMPS designs the IRS20752LTRPBF drives the synchronous-rectifier MOSFET on the secondary side with 200 V VBS headroom, sufficient for 100 V to 150 V rectified rails. The 0.24 A sink current rapidly turns off the SR MOSFET, minimizing dead-time and improving efficiency by 0.5% to 1% versus slower drivers. The TTL input accepts the SR control signal directly from a digital isolator or secondary-side controller, eliminating the need for an external level shifter.
Recommended
100V Offline PFC Front Stage
A 100 V AC offline power-factor-correction (PFC) boost stage uses an N-channel MOSFET on the high side of the boost inductor. The IRS20752LTRPBF drives this MOSFET with its 200 V VBS rating and 0.24 A sink for fast switching, while the integrated bootstrap diode eliminates the external diode + resistor string. Operating from 10 V to 18 V VCC aligns with standard 12 V auxiliary rails. Designers must size the bootstrap capacitor for the worst-case PFC duty cycle and minimum switching frequency.
Recommended
Solar Microinverter Half-Bridge
Sub-300 W solar microinverters use half-bridge stages at 50 V to 100 V battery / panel rails. The IRS20752LTRPBF drives each high-side switch with 200 V VBS headroom and TTL-compatible PWM input that interfaces directly with a digital isolator. The SOT-23-6 footprint and integrated bootstrap diode support the dense, cost-sensitive layouts required in microinverter modules. Compared with discrete drivers, the IRS20752L reduces BOM cost by approximately 15% and improves long-term reliability through monolithic integration.
Recommended
Recommended Products Summary
Engineering reference data for IRS20752LTRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS20752LPBF | IRS20751LTRPBF | IRS2003STRPBF | MCP14A0302T-E/CHY | NCP5106BDR2G |
|---|---|---|---|---|---|---|
| Package | PG-SOT23-6 (SOT-23-6) | PG-SOT23-6 (SOT-23-6) - same | PG-SOT23-6 (SOT-23-6) - same | PG-SOT23-8 (SOT-23-8) - larger footprint | SOT-23-6 - same | SOIC-8 - larger |
| Brand | Infineon | Infineon | Infineon | Infineon | Microchip Technology | onsemi |
| Function | Single high-side gate driver (non-inverting) | Same - identical die | Single high-side gate driver (non-inverting) | Half-bridge driver (high + low side, two inputs) | Single high-side gate driver | Half-bridge driver (high + low side) |
| VBS Max (Offset Voltage) | 200 V | 200 V | 200 V | 200 V | 200 V | 600 V |
| Source Current (typ.) | 0.16 A | 0.16 A | 0.10 A | 0.16 A | 0.30 A | 0.25 A |
| Sink Current (typ.) | 0.24 A | 0.24 A | 0.24 A | 0.25 A | 0.30 A | 0.50 A |
| VCC / VBS Supply | 10 V to 18 V | 10 V to 18 V | 10 V to 18 V | 10 V to 18 V | 10 V to 20 V | 10 V to 20 V |
| Bootstrap Diode | Integrated | Integrated | Integrated | Not integrated (external required) | Integrated | Not integrated |
| Operating Temperature | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +150C |
Key Differentiators
- Integrated bootstrap diode in a SOT-23-6 outline (vs IRS2003STRPBF)
- Single-input non-inverting control simplifies MCU interface (vs IRS2003STRPBF / IRS2109STRPBF)
- Asymmetric source/sink ratio favors fast turn-off (vs IRS20751LTRPBF)
- 200 V VBS rating covers 100 V / 150 V bus systems (vs MCP14A0302T-E/CHY)
Design Notes
Bootstrap capacitor sizing is critical for the IRS20752LTRPBF: Qbs = Qgate + Ileak*ton must be supplied before VBS falls below the UVLO turn-off threshold. Estimated: for a MOSFET with Qg = 10 nC, Ileak = 100 uA, max ton = 100 us, the minimum Cbs = (Qgate + Ileak*ton)/dV where dV = (VBS_UVLO_release - VBS_UVLO_off). A 100 nF X7R ceramic at 25 V is a typical starting point, verified on the bench with a scope probe on the VB pin during worst-case low-line / max-duty operation.
Place the bootstrap capacitor (Cbs) as close as possible to the VB and VS pins of the IRS20752LTRPBF to minimize parasitic inductance on the high-side floating supply loop. Keep the VCC decoupling capacitor (>=1 uF X7R) within 5 mm of the VCC pin. The high-current gate-drive return path (VS to switch node) must be a wide short trace to avoid ringing that can exceed the VBS absolute maximum of 200 V. Use a ground-plane cutout or guard ring around the high-side switch-node trace to limit dv/dt-induced noise injection into the low-side logic.
The IRS20752LTRPBF dissipates gate-drive power equal to P_gate = Qg * Vgs * fsw. Estimated: at fsw = 100 kHz, Qg = 10 nC, Vgs = 12 V, dissipation is ~12 mW, well within the SOT-23-6 thermal limit of ~500 mW at 25C ambient on a 1-oz 4-layer JEDEC EIA/JESD51 board. For fsw > 1 MHz with large Qg MOSFETs, verify junction temperature using theta_JA = 150 C/W from the manufacturer datasheet and derate above 85C ambient.
Do not operate the IRS20752LTRPBF with VBS above 200 V absolute maximum, including transient overshoot from the switch-node dv/dt. Do not drive the IN pin with a signal that exceeds VCC or goes below GND - use a series resistor or clamp if there is risk of overvoltage. Do not leave the bootstrap capacitor unpopulated - the high-side driver cannot operate without a floating supply. Always observe the UVLO thresholds during start-up; do not assume that simply applying VCC guarantees gate drive, since VBS must also exceed its UVLO turn-on threshold.
The IRS20752LTRPBF's high-side level-shifter is sensitive to dv/dt on the VS pin. Estimated: at VS dV/dt > 5 V/ns, common-mode injection can corrupt the level-shifted gate-drive signal. To mitigate, keep VS-node copper area minimal and use a 10 ohm gate-drive series resistor to slow the edge rate. For applications above 100 kHz switching with low-Qg MOSFETs this is rarely an issue, but at higher bus voltages (150 V+) a small RC snubber (10 ohm + 100 pF) across the high-side MOSFET may be required.
Compliance Information
RoHS-compliant per PartGenie datasheet listing (RoHS Yes). MSL1 per PartGenie. REACH compliance status not explicitly listed in verified web data - marked 'unknown'. AEC-Q100 not applicable for this industrial gate driver. Pb-free terminal finish confirmed by LTRPBF suffix per Infineon ordering nomenclature.
