ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon
MPN: ISC011N03L5SATMA1 ✓ Hoạt độngISC011N03L5SATMA1 Tóm tắt
What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-controlled three-terminal semiconductor switch where the channel between drain and source is formed by an N-type inversion layer under the gate oxide. N-channel devices offer lower on-resistance per unit silicon area than P-channel equivalents because electron mobility is 2-3x higher than hole mobility. Power MOSFETs such as the ISC011N03L5S belong to the discrete semiconductor family, sit under the power MOSFET subcategory, and are commonly used as low-side switches, high-side switches (with gate driver), and synchronous rectifier stages in switching converters.
Key features of the ISC011N03L5SATMA1 include an industry-leading ultra-low RDS(on) in the 30 V OptiMOS 5 family (targeting high-efficiency DC-DC conversion), logic-level gate drive (VGS(th) typically in the 1.0-1.7 V range for direct MCU GPIO driving at 3.3 V), and a small 5 mm x 6 mm TDSON footprint that maximizes power density per PCB area. The PG-TDSON-8-1 package exposes the die to a thermal pad that significantly reduces junction-to-case thermal resistance, supporting up to 96 W dissipation at case.
Technically, the device uses Infineon's advanced trench MOSFET cell architecture to minimize both on-resistance and gate charge, achieving a figure of merit (FOM = RDS(on) x Qg) tuned for high-frequency switching. The combination of low Qg and low RDS(on) reduces both conduction and switching losses, making the part well suited to hard-switched topologies at 500 kHz to 1 MHz. The TDSON EP package is JEDEC-registered and is drop-in compatible with other Infineon StrongIRFET/OptiMOS 5 30 V parts in the same family.
Typical applications include high-current DC-DC buck converters (telecom POL, server VRM), motor drive H-bridges (12 V brushless DC and brushed DC motors), battery management systems for e-mobility tools, synchronous rectification in low-voltage SMPS, hot-swap / eFuse switches on 12 V distribution rails, and OR-ing FETs in redundant power architectures. The 30 V rating provides adequate margin for nominal 12 V automotive/industrial rails with transient tolerance to 24 V load-dump events.
When designing with this MOSFET, pay close attention to gate-drive voltage and dv/dt-induced turn-on: a 10 kV/us transient on the drain can partially turn on the FET through the Miller capacitance. Place the gate-source pull-down resistor (typically 10 kohm to 100 kohm) as close to the GS pins as possible, and route the high-current loop (drain-source) over the smallest area to minimize parasitic inductance. The exposed pad must be soldered to a sufficiently large copper pour (>= 1 cm^2) to keep thermal rise within design limits.
This page synthesizes Infineon datasheet specifications, distributor pricing tiers from DigiKey, Mouser, and Octopart, drop-in same-package alternatives, and practical PCB layout / thermal design notes not consolidated on the manufacturer product page.
Bộ thay thế dễ dàng lắp đặt cho ISC011N03L5SATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISC011N03L5SATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
ISC0802NLSATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →ISC0703NLSATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →ISC015N04NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC022N04LS6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD135N03LGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ011NE2LS5IATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →ISC011N03L5SATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 / StrongIRFET 30 V |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | 100 A |
| Power Dissipation (PD) @ Ta=25C | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | 96 W |
| Hộp | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ hoạt động | -55 C to +175 C (TJ) |
| Technology | OptiMOS 5 trench MOSFET |
| Gate Drive | Logic-level compatible |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
Cấu hình chân ISC011N03L5SATMA1
| Chân 1 | Source (S) — Source terminal, connected to pins 1-3 |
| Chân 2 | Source (S) — Source terminal, connected to pins 1-3 |
| Chân 3 | Source (S) — Source terminal, connected to pins 1-3 |
| Chân 4 | Gate (G) — Logic-level gate drive input |
| Chân 5 | Drain (D) — Drain terminal, connected to pins 5-8 and exposed pad |
| Chân 6 | Drain (D) — Drain terminal, connected to pins 5-8 and exposed pad |
| Chân 7 | Drain (D) — Drain terminal, connected to pins 5-8 and exposed pad |
| Chân 8 | Drain (D) — Drain terminal, connected to pins 5-8 and exposed pad |
ISC011N03L5SATMA1 Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
ISC011N03L5SATMA1 phù hợp cho 6 Áp dụngs: 12 V Point-of-Load (POL) DC-DC Buck Converter, Brushless DC (BLDC) Motor Drive H-Bridge, Battery Protection and Power Path Management, Synchronous Rectification in 12 V SMPS, Hot-Swap / eFuse Switch on 12 V Distribution Rails, OR-ing FET in Redundant 12 V Power Architectures.
12 V Point-of-Load (POL) DC-DC Buck Converter
The ISC011N03L5SATMA1 serves as the low-side synchronous rectifier (or high-side control FET) in a 12 V-input buck converter delivering 3.3 V to 12 V at 10-30 A, common in telecom and server boards. Its very low RDS(on) in the 30 V OptiMOS 5 class minimizes conduction loss, while its low Qg reduces switching loss at 300-700 kHz switching frequencies, achieving peak efficiencies above 96%. The TDSON EP footprint supports 96 W dissipation at case and the logic-level gate enables direct 3.3 V PWM drive from a digital controller. Placed between the 12 V input rail and the output inductor with Kelvin-source routing for clean gate drive.
Được đề xuất
Brushless DC (BLDC) Motor Drive H-Bridge
In a 12 V BLDC motor drive or a brushed-DC H-bridge, the ISC011N03L5SATMA1 is used as the low-side (and optionally high-side with gate driver) switching element per phase. Its 100 A TC-rated continuous current supports high-torque motor windings, while the 30 V VDS gives margin against regenerative back-EMF spikes (typically clamped at 24 V by the bus capacitor). The exposed pad of the TDSON-8 package enables direct PCB heatsinking so the FET can sustain PWM switching at 20-50 kHz without external heatsinks. Logic-level drive simplifies the interface to a 3.3 V motor-control MCU.
Được đề xuất
Battery Protection and Power Path Management
The ISC011N03L5SATMA1 is well suited as a battery protection FET or power-path OR-ing MOSFET in 4S-8S Li-ion battery packs (12-36 V nominal). Its 30 V VDS covers up to 8S Li-ion fully charged (33.6 V), and the 100 A TC rating handles high discharge currents in power-tool and e-bike applications. The logic-level gate drive enables direct control from a battery management IC (BMIC) operating at 3.3 V. The exposed pad allows PCB-side thermal dissipation during high-current discharge transients. Place on the high-side with a charge pump or on the low-side with a BMIC-driven pull-down gate resistor.
Được đề xuất
Synchronous Rectification in 12 V SMPS
In an isolated or non-isolated 12 V-input switch-mode power supply (SMPS) with a 5 V to 24 V output, the ISC011N03L5SATMA1 replaces the secondary-side Schottky rectifier with a synchronous MOSFET to recover the diode forward drop (typically 0.3-0.5 V at 30 A, equivalent to 9-15 W of loss). Its low RDS(on) and low Qg are tuned for the rectification switching pattern (one transistor per switching cycle, body-diode conduction during dead-time). The TDSON EP exposed pad dissipates the residual conduction loss to PCB copper, and the logic-level gate accepts direct drive from a synchronous-rectifier controller IC.
Được đề xuất
Hot-Swap / eFuse Switch on 12 V Distribution Rails
The ISC011N03L5SATMA1 acts as the main pass element in a 12 V hot-swap controller or electronic fuse (eFuse) circuit, protecting backplane distribution from inrush transients when a plug-in card is inserted. Its 30 V VDS withstands 24 V load-dump transients on automotive 12 V rails, and the 100 A TC rating supports high-power board insertion. The logic-level gate accepts drive directly from hot-swap controllers such as the LTC4217 or TPS2590. Add a 10 kohm gate-source pull-down for dv/dt immunity, and clamp VGS with a 12 V Zener for transient protection.
Được đề xuất
OR-ing FET in Redundant 12 V Power Architectures
In redundant 12 V server or telecom power systems, the ISC011N03L5SATMA1 functions as an OR-ing MOSFET that replaces Schottky diodes to reduce the per-channel forward-conduction loss from 0.4 V to RDS(on) x I (e.g., 0.005 V at 30 A). Its fast body diode and logic-level gate enable dynamic current-sharing between redundant supply feeds, with a controller such as the LTC4352 or LM5050 regulating the gate to share load and block reverse current. The 30 V VDS tolerates bus transients, and the TDSON EP dissipates load current losses to PCB copper.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISC011N03L5SATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISC0802NLSATMA1 | ISC0703NLSATMA1 | ISC015N04NM5ATMA1 | BSC022N04LS6ATMA1 | IPD135N03LGATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 (TDSON EP) | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 40 V | 40 V | 30 V |
| Generation / Technology | OptiMOS 5 / StrongIRFET 30 V (-L5S) | OptiMOS 5 / StrongIRFET 30 V (-L5S) | OptiMOS 5 / StrongIRFET 30 V (-L5S) | OptiMOS 5 40 V (-NM5) | OptiMOS 5 40 V (-LS6) | OptiMOS 3 30 V |
| Logic-Level Gate Drive | Yes | Yes | Yes | Yes | Yes | Yes |
| Typical RDS(on) Class at 4.5 V VGS | Lowest (OptiMOS 5 -L5S grade) | Low (lower cost grade) | Low (lower cost grade) | Medium (40 V trade-off) | Medium | Higher (older OptiMOS 3) |
Bảo phân biệt quan trọng
- Lowest RDS(on) class in Infineon 30 V OptiMOS 5 family (vsISC0802NLSATMA1)
- 30 V VDS rating optimized for 12 V rails vs 40 V family (vsISC015N04NM5ATMA1)
- Latest-generation OptiMOS 5 vs OptiMOS 3 (vsIPD135N03LGATMA1)
Ghi chú thiết kế
Estimated: at VDS = 30 V, ID = 37 A (TA rating), and RDS(on) of 1.5 mOhm (typical OptiMOS 5 -L5S), conduction loss is approximately 37 A x 37 A x 0.0015 Ohm = 2.05 W, well within the 2.5 W TA rating when the TDSON-8 exposed pad is soldered to at least 1 in^2 of 1 oz copper. For higher dissipation, attach the exposed pad to an external cold plate or add thermal vias to inner-plane copper. Junction-to-ambient thermal resistance (theta_JA) on a 1 in^2 1 oz pad is approximately 50 C/W for the TDSON-8 package, yielding a 25 C temperature rise per watt of dissipation.
Route the high-current loop (drain to source through the external load) over the smallest possible PCB area to minimize parasitic inductance - typically a 5-10 nH stray inductance can ring at 50-100 MHz with the drain-side dv/dt, generating > 30 V overshoot that can punch through the 30 V VDS rating. Place the gate-drive loop (gate to source pull-down resistor to source pin) over a similarly small area. Keep the gate-source 10 kohm-100 kohm pull-down resistor within 5 mm of the gate pin to suppress dv/dt-induced turn-on.
Do not drive the ISC011N03L5SATMA1 with a gate voltage exceeding the maximum VGS rating of +/- 20 V (typically +/- 12 V or +/- 10 V in practice for margin). A gate-source Zener clamp (e.g., 12 V) is recommended in motor-drive and hot-swap applications to protect against transient gate over-voltage. Do not operate the device above the SOA curve at DC - the 96 W TC rating assumes 25 C case; derate linearly to zero at 175 C junction.
Use a 4-layer PCB with a solid ground plane directly beneath the MOSFET for lowest thermal resistance. Place thermal vias in a 3 x 3 grid (0.3 mm drill, 0.6 mm pitch) directly under the exposed pad to conduct heat into inner copper planes. Keep high-voltage drain traces away from low-voltage gate traces to prevent capacitive coupling that can inject noise into the gate drive. Use wide copper pours (>= 50 mil trace width) for source and drain connections to minimize conduction loss in the PCB itself.
Thông tin tuân thủ
RoHS and REACH compliance per Infineon product page; MSL Level 1 (unlimited floor life) per JEDEC J-STD-020. Not AEC-Q100 qualified - this part targets industrial / consumer applications. For automotive-grade equivalents, look at Infineon's AEC-Q100 qualified OptiMOS 5 variants.
