IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon
MPN: IAUT300N10S5N015ATMA1 ✓ Hoạt độngIAUT300N10S5N015ATMA1 Tóm tắt
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch optimized for switching and conducting large currents at high efficiency. It belongs to the power-management transistor family, sitting below wide-bandgap devices (GaN, SiC) and above small-signal MOSFETs in the power-electronics taxonomy. The MOSFET's low R<sub>DS(on)</sub> directly determines conduction losses: P = I² × R<sub>DS(on)</sub>, so a 1.5 mΩ part dissipating 300 A loses approximately 135 W purely in conduction.
Key features include 1.5 mΩ typical R<sub>DS(on)</sub> at VGS=10 V, ±20 V gate-source rating, and 100% avalanche-tested reliability per Infineon's OptiMOS 5 process. The device is AEC-Q101 qualified for automotive environments, supports MSL1 reflow up to 260°C peak, and operates across 175°C junction temperature. The OptiMOS 5 generation uses Infineon's latest trench-cell technology to lower switching losses versus earlier OptiMOS generations.
The PG-HSOF-8-1 package provides a large exposed metal drain tab with very low thermal resistance (~0.4°C/W typical), enabling 375 W dissipation with proper PCB thermal via design. The footprint is optimized for high-current automotive PCB layouts where paralleling and copper-cooling area are critical. Compared with TO-220/TO-263 packages, PG-HSOF-8-1 achieves roughly half the R<sub>DS(on)</sub> per unit area thanks to its clip-bonded source-down construction.
Typical applications include 48 V mild-hybrid inverter switching, high-current DC-DC converter primary-side switches, BLDC motor drivers in electric power steering and brake-by-wire, battery disconnect switches, and automotive e-fuse protection circuits. Its low R<sub>DS(on)</sub> reduces I²R losses in 300 A-class switching where every milliohm translates into significant thermal budget recovery.
When designing with this device, calculate conduction loss P_cond = I_rms² × R<sub>DS(on)</sub> at your hottest operating temperature (R<sub>DS(on)</sub> typically doubles from 25°C to 175°C). Provide sufficient PCB copper area (at least 4 square inches of 2 oz copper with thermal vias) to keep junction rise below 50°C at full 300 A load. Gate-drive voltage should be 10 V for rated R<sub>DS(on)</sub>; lower VGS raises R<sub>DS(on)</sub> dramatically.
This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives, and practical thermal design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IAUT300N10S5N015ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUT300N10S5N015ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
IAUT300N08S5N011ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC90N10S5N062ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC100N04S6L020ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUZ40N08S5N100ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC011N03L5SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUT300N10S5N015ATMA1 Tỷ lệ tối đa & tính chất điện
| Technology | OptiMOS 5 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 300 A |
| Power Dissipation (PD, Tc) | 375 W |
| RDS(on) (typ, VGS=10V) | 1.5 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Khoảng nhiệt độ hoạt động | -55°C to +175°C |
| Hộp | PG-HSOF-8-1 (HSOF-8) |
| Kiểu lắp đặt | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| Cấp MSL | MSL1 (260°C peak reflow) |
| RoHS Compliance | RoHS compliant (Green product) |
| Avalanche Tested | 100% avalanche tested |
| Polarity | N-Channel |
| Mode of Operation | Enhancement-mode |
Cấu hình chân IAUT300N10S5N015ATMA1
| Chân 1 | Source — Source connection (parallel-bonded) |
| Chân 2 | Source — Source connection (parallel-bonded) |
| Chân 3 | Source — Source connection (parallel-bonded) |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Source — Source connection (parallel-bonded) |
| Chân 6 | Source — Source connection (parallel-bonded) |
| Chân 7 | Source — Source connection (parallel-bonded) |
| Chân 8 | Source / Drain Tab — Source bond pad / drain exposed metal tab (electrically drain-tied, exposed for thermal dissipation) |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IAUT300N10S5N015ATMA1 phù hợp cho 6 Áp dụngs: 48V Mild-Hybrid Inverter Switching, High-Current DC-DC Converter Primary Switch, BLDC Motor Driver for Electric Power Steering, Battery Disconnect Switch / eFuse Protection, Industrial 48V Robotics Drive, Solar Inverter / Energy Storage DC Switch.
48V Mild-Hybrid Inverter Switching
The IAUT300N10S5N015ATMA1's 100 V VDS rating with 1.5 mΩ RDS(on) makes it ideal as the primary switching element in 48V mild-hybrid inverters. The 300 A continuous current handles the 10–20 kW peak power levels of integrated starter-generators (ISG) and e-turbos, while the AEC-Q101 qualification satisfies automotive reliability targets. The HSOF-8 package's low thermal resistance (~0.4°C/W) keeps junction temperature in check during 100% duty-cycle torque-assist events, and the 100% avalanche rating provides robustness during inductive load dumps.
Được đề xuất
High-Current DC-DC Converter Primary Switch
In 48V-to-12V or 48V-to-5V DC-DC converters delivering 3–5 kW, the IAUT300N10S5N015ATMA1 serves as the primary-side synchronous-rectifier or main switch. Its 1.5 mΩ RDS(on) reduces conduction loss to ~135 W at full 300 A load, dramatically improving efficiency versus discrete MOSFET arrays. The 100 V VDS provides comfortable margin above 48V bus transients (ISO 7637-2 pulses up to ~85V), and the AEC-Q101 grade supports under-hood deployment near engine control units.
Được đề xuất
BLDC Motor Driver for Electric Power Steering
The 300 A continuous current capability of IAUT300N10S5N015ATMA1 supports column-assist EPS systems delivering peak torque during parking maneuvers. Its ultra-low RDS(on) minimizes I²R dissipation in the H-bridge, reducing heatsink mass critical for steering-column-mounted PCBs. The HSOF-8 package handles the repetitive peak-current pulses of servo loops, and AEC-Q101 plus 175°C operation satisfy ISO 26262 ASIL-D functional-safety designs with redundant driver channels.
Được đề xuất
Battery Disconnect Switch / eFuse Protection
As a battery disconnect switch in 48V lithium-ion packs, the IAUT300N10S5N015ATMA1 carries continuous 300 A while its 1.5 mΩ RDS(on) keeps voltage drop below 0.5V at peak load. During short-circuit events, the device's 100% avalanche rating handles the inductive kickback from the battery bus inductance without catastrophic failure. The HSOF-8 footprint simplifies paralleling two devices for 600 A systems, and AEC-Q101 qualification is mandatory for ISO 26262 battery-management deployments.
Được đề xuất
Industrial 48V Robotics Drive
In AGV/AMR robotic drive systems operating on 48V industrial bus rails, the IAUT300N10S5N015ATMA1 provides the high-current switching required for servo and traction inverters. Its 100 V VDS offers 2x safety margin over 48V nominal (typically 56V peak), preventing avalanche failure during regenerative-braking events. The 175°C junction rating supports enclosed motor housings with limited airflow, while the HSOF-8 package's clip-bond construction tolerates high-vibration robot-cell environments.
Được đề xuất
Solar Inverter / Energy Storage DC Switch
In solar microinverters and residential energy-storage systems, the IAUT300N10S5N015ATMA1 functions as the high-side disconnect switch for 48V battery banks. The 1.5 mΩ RDS(on) minimizes idle losses in always-on energy-storage systems, extending battery life. Its 100V VDS handles the maximum power-point voltage of 48V strings with margin, and the HSOF-8 surface-mount package enables automated high-volume PCB assembly versus traditional TO-247 through-hole discretes.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUT300N10S5N015ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUT300N08S5N011ATMA1 | IAUC90N10S5N062ATMA1 | IAUC100N04S6L020ATMA1 | IAUZ40N08S5N100ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-1 (HSOF-8) | PG-HSOF-8-1 (HSOF-8) - same | PG-HSOF-8-1 (HSOF-8 family) - same | PG-HSOF-8-1 (HSOF-8 family) - same | PG-HSOF-8-1 (HSOF-8 family) - same | PG-HSOF-8-1 (HSOF-8 family) - same |
| Drain-Source Voltage (VDS) | 100 V | 80 V | 100 V | 40 V | 80 V | 30 V |
| Process Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 |
Bảo phân biệt quan trọng
- Highest continuous current in HSOF-8 class (vsIAUC90N10S5N062ATMA1)
- Lower RDS(on) than IAUC100N04S6L020ATMA1 with same VDS class (vsIAUC100N04S6L020ATMA1)
- Higher VDS rating than 80V-class Infineon alternatives (vsIAUT300N08S5N011ATMA1)
- OptiMOS 5 generation with proven 100% avalanche rating (vsIAUZ40N08S5N100ATMA1)
Ghi chú thiết kế
At 300 A continuous drain current and 1.5 mΩ RDS(on) (25°C), conduction loss is approximately 135 W. Estimated: assuming 4 sq. inches of 2 oz copper on the drain tab with 0.4°C/W junction-to-case and 50°C/W case-to-ambient, junction temperature rises ~110°C above ambient — adequate for 25°C ambient operation but borderline for 85°C under-hood. Add a forced-air fan or increase copper area to 6+ sq. inches for hot environments.
The PG-HSOF-8-1 drain tab is the primary thermal path; use a top-side copper pour of at least 4 sq. inches of 2 oz copper connected to the drain pad. Place an array of thermal vias (12–25 vias, 0.3 mm drill, 0.5 mm pitch) directly under the exposed pad to inner-layer copper spreading. Keep source-return current paths short and symmetric on all 7 source pins to balance current sharing and minimize parasitic source inductance that causes ringing.
Gate-drive traces should be kept short (<25 mm) and routed over a continuous ground plane to minimize gate-loop inductance. Place the gate driver (e.g., 1ED3323MC12NXUMA1) as close as possible to pins 4 (gate) and the source-return pins. Use a bootstrap or isolated gate-drive supply referenced to the source pad, not the drain tab, to avoid dv/dt-induced false triggering. Add a 10–100 Ω gate-resistor in series with the gate to dampen ringing at high di/dt.
Do not exceed VGS = ±20 V — the IAUT300N10S5N015ATMA1 has a relatively low absolute-maximum gate rating compared to 30 V-rated competitors. Always use a gate-source Zener clamp (typically 15–18 V) to protect against dv/dt-induced over-voltage during turn-off transients. Also avoid operating below VGS(th) (typically 2.5–3.5 V) — partial-turn-on causes the device to dissipate excessive power in the linear region.
Switching transients in this 300 A-class device can reach 5–10 kV/μs. Use a snubber (RC or RCD) across the drain-source if switching inductive loads without a freewheeling path. Measure gate-source voltage with a low-inductance probe tip (spring tip, <2 cm ground lead) to avoid spurious ringing that can confuse the driver logic. For paralleled operation, add individual gate-source resistors (10–100 Ω) per device to suppress parasitic oscillations between paralleled MOSFETs.
Thông tin tuân thủ
RoHS compliant (Green product) and AEC-Q101 qualified for automotive applications. MSL1 reflow rated to 260°C peak. Halogen-free status not explicitly stated in datasheet — set to 'unknown'.
