IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
MPN: IAUZ40N06S5L050ATMA1 ✓ Hoạt độngIAUZ40N06S5L050ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that converts digital gate drive into high-current load switching. Within the broader taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> power transistors; the N-channel enhancement-mode variant is the dominant polarity for low-side and high-side switching because electron mobility is roughly 2-3× higher than hole mobility, giving lower on-resistance per unit silicon area. The IAUZ40N06S5L050 belongs to the OptiMOS 5 60 V automotive family, optimized for synchronous rectification, DC-DC conversion, and motor drive.
Key specifications include a gate charge Q<sub>G</sub> of 28.2 nC, gate threshold V<sub>GS(th)</sub> of 2.2 V at 29 µA, and an operating junction temperature range of -55 °C to +175 °C qualifying it for AEC-Q100 automotive environments. The OptiMOS 5 super-junction architecture reduces both conduction and switching losses simultaneously, enabling higher switching frequencies (≥100 kHz) and smaller magnetics in downstream converters.
This device targets high-current automotive applications where PCB area is constrained but thermal performance cannot be compromised. The PG-TSDSON-8-33 package features an exposed drain pad that doubles as the thermal interface, allowing direct heat dissipation into the copper pour. Compared with traditional D²PAK or TO-220 packages of equivalent R<sub>DS(on)</sub>, the TSDSON-8-33 footprint is roughly 60% smaller while maintaining equivalent thermal resistance.
Typical applications include 12 V/48 V automotive DC-DC converters, LED headlight drivers, ADAS power supplies, eMobility traction inverters, and battery management system (BMS) protection circuits. The part's combination of low R<sub>DS(on)</sub> and low Q<sub>G</sub> makes it particularly suited for synchronous rectification in high-frequency buck converters where both conduction loss and switching loss dominate the efficiency budget.
When designing with this MOSFET, observe the SOA envelope carefully - pulsed drain current handling decreases rapidly at elevated V<sub>DS</sub>. Use a gate drive voltage of 10 V for full R<sub>DS(on)</sub> specification; driving at 4.5 V (logic level) approximately doubles conduction loss. The datasheet's thermal resistance value assumes a 2s2p FR4 PCB per JEDEC JESD51-5/-7 - actual in-application R<sub>θJA</sub> depends heavily on copper-pour area and airflow.
This page synthesizes Infineon datasheet parameters, distributor pricing snapshots, and drop-in alternative recommendations not found in the standalone manufacturer datasheet - giving design engineers and procurement teams a single source for both technical evaluation and sourcing decisions.
Bộ thay thế dễ dàng lắp đặt cho IAUZ40N06S5L050ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUZ40N06S5L050ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Automotive Qualification.
IAUZ40N08S5N100ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC036NE7NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC059N04LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC042NE7NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUZN04S7L030ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC011N03L5SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUZ40N06S5L050ATMA1 Tỷ lệ tối đa & tính chất điện
| Polarity | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V |
| Drain Current at T<sub>j</sub> | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | 5 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | 6.4 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 2.2 V at 29 µA |
| Total Gate Charge Q<sub>G</sub> | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 71 W |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Hộp | PG-TSDSON-8-33 (TSDSON-8) |
| Kiểu lắp đặt | Surface Mount |
| Technology | OptiMOS 5 (super-junction N-channel) |
| Automotive Qualification | AEC-Q100 qualified |
| Trạng thái RoHS | Compliant |
Cấu hình chân IAUZ40N06S5L050ATMA1
| Chân 1 | Source — Source connection (pin 1 of 8) |
| Chân 2 | Source — Source connection (pin 2 of 8) |
| Chân 3 | Source — Source connection (pin 3 of 8) |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Drain — Drain connection (pin 5 of 8) |
| Chân 6 | Drain — Drain connection (pin 6 of 8) |
| Chân 7 | Drain — Drain connection (pin 7 of 8) |
| Chân 8 | Drain — Drain connection (pin 8 of 8) |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IAUZ40N06S5L050ATMA1 phù hợp cho 6 Áp dụngs: 12V Automotive DC-DC Buck Converter, Automotive LED Headlight Driver, 48V Mild-Hybrid DC-DC Converter, Battery Management System (BMS) Protection, ADAS Sensor Power Supply, E-Mobility Motor Drive Auxiliary Stage.
12V Automotive DC-DC Buck Converter
The IAUZ40N06S5L050ATMA1 fits as the synchronous rectifier (low-side) in 12 V input buck converters for automotive infotainment, ADAS ECUs, and body controllers. With 5 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub> and 28.2 nC Q<sub>G</sub>, it minimizes both conduction loss (P=I²R ≈ 0.45 W at 30 A continuous) and switching loss at 100-300 kHz operating frequency. The 60 V V<sub>DS</sub> rating provides ≥25 V margin above 12 V battery + load-dump transients (35 V peak per ISO 7637-2). The PG-TSDSON-8-33 footprint enables converter designs under 25 mm² total footprint, critical for distributed ECU placement.
Được đề xuất
Automotive LED Headlight Driver
The IAUZ40N06S5L050ATMA1 functions as the main switching FET or synchronous rectifier in automotive LED headlight boost/buck driver topologies. Its 90 A continuous drain current supports high-brightness LED arrays up to 30 A load without paralleling devices. The 60 V V<sub>DS</sub> rating gives margin against automotive transient events, and the AEC-Q100 qualification is mandatory for headlamp applications. The PG-TSDSON-8-33 thermal pad enables direct PCB heat-sinking, allowing compact headlamp module designs with junction temperature staying below 150 °C even at 8-12 W continuous dissipation.
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48V Mild-Hybrid DC-DC Converter
The IAUZ40N06S5L050ATMA1 can be used in 48 V mild-hybrid systems where V<sub>DS</sub> transients are controlled below 60 V by the converter topology. For example, in a 48 V to 12 V buck converter operating at 200 kHz, the IAUZ40N06S5L050ATMA1's low R<sub>DS(on)</sub>×Q<sub>G</sub> figure-of-merit enables >97% peak efficiency at 20 A load. For designs where 48 V battery transients could exceed 60 V, consider the higher-voltage IPB020N10N5ATMA1 from the XAIPART catalog as a same-footprint alternative with 100 V rating.
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Battery Management System (BMS) Protection
In BMS protection circuits, the IAUZ40N06S5L050ATMA1 serves as a high-current disconnect switch for 12 V/48 V battery modules. Its 90 A continuous current rating handles peak discharge currents during engine cranking or regenerative braking events. The 60 V V<sub>DS</sub> rating accommodates 48 V nominal plus inductive transients when switching off inductive loads. The PG-TSDSON-8-33 package allows bidirectional current flow when wired in back-to-back configuration for high-side + low-side disconnect topologies used in master-slave BMS architectures.
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ADAS Sensor Power Supply
The IAUZ40N06S5L050ATMA1 powers ADAS sensor rails (camera, radar, lidar) where high-current bursts occur during sensor activation and post-processing. The 5 mΩ R<sub>DS(on)</sub> minimizes voltage droop during 5-10 A load steps from radar MMIC activation. The AEC-Q100 qualification is required for ISO 26262 functional-safety rated ADAS subsystems. The low Q<sub>G</sub> of 28.2 nC allows the device to be driven directly from logic-level GPIO on small microcontrollers without a dedicated gate driver, simplifying ADAS sensor PCB designs.
Được đề xuất
E-Mobility Motor Drive Auxiliary Stage
The IAUZ40N06S5L050ATMA1 serves in auxiliary power stages for e-mobility traction systems - specifically the 12 V auxiliary buck converters that power vehicle accessories from the high-voltage traction battery. With 5 mΩ R<sub>DS(on)</sub> and 71 W power dissipation rating, it handles the auxiliary load transients (up to 40 A peaks during seat/window motor activation). The -55 °C to +175 °C junction temperature range ensures operation across automotive underhood thermal extremes. PG-TSDSON-8-33 footprint enables direct PCB-mount thermal management without heatsinks.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUZ40N06S5L050ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUZ40N08S5N100ATMA1 | BSC036NE7NS3GATMA1 | BSC059N04LSGATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-33 | PG-TSDSON-8-33 (same) | PG-TSDSON-8 (same family) | PG-TSDSON-8 (same family) | PG-TSDSON-8-33 (same) |
| VDS max | 60 V | 60 V (same) | 75 V (+25%) | 40 V (-33%) | 40 V (-33%) |
| RDS(on) max @ 10V | 5 mΩ | 8 mΩ (+60%) | 3.6 mΩ (-28%) | 5.9 mΩ (+18%) | 3 mΩ (-40%) |
| Automotive Grade (AEC-Q100) | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Optimized balance of low RDS(on) (5 mΩ) and low QG (28.2 nC) at 60 V VDS in compact PG-TSDSON-8-33 footprint (vsBSC059N04LSGATMA1)
- AEC-Q100 automotive-qualified OptiMOS 5 generation (vsISC011N03L5SATMA1)
- Highest continuous drain current (90 A at Tj) in the 60 V TSDSON-8 family (vsIAUZ40N08S5N100ATMA1)
Ghi chú thiết kế
Estimated: At P_D = 71 W into the PG-TSDSON-8-33 case and an R_θJA of approximately 50 °C/W on a standard 2s2p FR4 PCB (per JEDEC JESD51-5/-7), the junction temperature rise is ~71 W × 50 °C/W = 3550 °C above ambient, which obviously exceeds the 175 °C rating. In practice, the 71 W rating is the absolute maximum at T_C=25 °C; in real applications the device must be thermally limited to ≤ 2-3 W steady-state on 1 oz copper without airflow. For 8-12 W continuous dissipation, use 2 oz copper with at least 1 cm² of drain-pad copper pour and consider adding thermal vias to inner layers.
The PG-TSDSON-8-33 footprint requires careful PCB layout. Source pins 1-3 should be connected with a wide top-side copper pour leading back to the source of the high-side FET (in buck topology) to minimize source-inductance-induced gate ringing. Place a 10 nF gate-to-source ceramic capacitor as close as possible to pin 4 (gate) to suppress Miller-effect turn-on. Use at least 4 thermal vias (0.3 mm drill, 0.5 mm pad) under the exposed drain pad to conduct heat into the inner-layer copper pour or bottom-side thermal pad.
Do not drive the gate with logic-level signals (3.3 V or 4.5 V) - this leaves R_DS(on) at 2-3× the datasheet value and can cause thermal runaway at high load. Use a dedicated 10 V gate driver or bootstrap supply. Be aware that the body diode has a moderate reverse-recovery charge (Q_rr) - for hard-switched half-bridge topologies, consider using the companion part's built-in anti-parallel diode or adding a Schottky in parallel. Finally, the 60 V V_DS rating is absolute maximum, not continuous operating - derate to ≤ 48 V (80%) for reliable long-term operation.
Thông tin tuân thủ
AEC-Q100 qualified for automotive applications per Infineon product page. RoHS and REACH compliant. PG-TSDSON-8-33 package is halogen-free per JEDEC JS709B definitions.
