BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon
MPN: BSP315PH6327XTSA1 ✓ Hoạt độngBSP315PH6327XTSA1 Tóm tắt
A P-channel MOSFET is a field-effect transistor in which the conducting channel forms when a negative gate-source voltage is applied, allowing the device to source current from a positive supply rail to a load referenced to ground without requiring a charge pump or high-side driver. P-channel MOSFETs sit within the broader hierarchy of MOSFETs -> transistors -> discrete semiconductors -> active components. They are widely used as high-side switches because their gate can be driven directly from a logic-level signal pulled to ground, simplifying bootstrap and level-shifting circuitry that would otherwise be required for an N-channel high-side switch.
Key features of the BSP315PH6327XTSA1 include a low threshold voltage suitable for direct 3.3 V and 5 V logic-level gate drive, low gate charge for fast switching transitions, an avalanche-rated body diode for inductive loads, and RoHS-compliant lead-free PG-SOT223-4 packaging with an exposed drain tab for improved thermal dissipation. The OptiMOS process delivers a strong figure-of-merit (RDS(on) x Qg) that minimizes conduction and switching losses simultaneously.
Technically, the device uses Infineon's planar-cell OptiMOS P-channel technology, which combines a low on-state resistance per unit area with tight parametric distribution for parallel-operation stability. The PG-SOT223-4 footprint exposes the drain tab, allowing the PCB copper pour itself to act as a heatsink and providing a thermal path to the load-side copper.
Typical applications include USB power switching, load management in battery-powered portable electronics, high-side switching in industrial control modules, motor and solenoid reverse-polarity protection, and DC-DC converter synchronous rectifier stages. The wide -60 V rating provides substantial headroom for 12 V and 24 V automotive bus transients.
When designing with this part, ensure that the gate-source voltage does not exceed the ±20 V maximum rating and add a gate-source pull-down resistor to hold the MOSFET off during MCU reset. For switching inductive loads, place a TVS diode or freewheeling clamp across the load to limit drain-voltage spikes within the avalanche rating.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho BSP315PH6327XTSA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSP315PH6327XTSA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Continuous Drain Current (ID), Power Dissipation (PD).
BSP316PH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSP88H6327XTSA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSL308PEH6327XTSA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSS205NH6327XTSA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSS169H6327XTSA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSD235CH6327XTSA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSP315PH6327XTSA1 Tỷ lệ tối đa & tính chất điện
| FET Type | P-Channel |
| Technology | OptiMOS (enhancement mode) |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) | -1.17 A (Ta) |
| Power Dissipation (PD) | 1.8 W (Ta) |
| Gate-Source Voltage (VGS) | ±20 V (max) |
| Khoảng nhiệt độ hoạt động | -55 C to +150 C (junction) |
| Hộp | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Kiểu lắp đặt | Surface Mount |
| Avalanche Energy Rated | Yes (per datasheet) |
| Lead-Free / RoHS | Yes / Compliant |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
Cấu hình chân BSP315PH6327XTSA1
| Chân 1 | Gate — Gate input; pull to source to disable, drive negative VGS to enable |
| Chân 2 | Drain — Drain connection; tied internally to the exposed tab |
| Chân 3 | Source — Source connection; reference point for VGS |
| Chân 4 | Drain (Tab) — Thermal/electrical drain tab on package back; solder to PCB copper pour |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
BSP315PH6327XTSA1 phù hợp cho 6 Áp dụngs: USB VBUS High-Side Power Switch, 12V/24V Industrial Load Switching, Reverse-Polarity Battery Protection, DC-DC Converter Synchronous Rectifier, Portable and Battery-Powered Device Load Management, LED Driver High-Side Switch.
USB VBUS High-Side Power Switch
The BSP315PH6327XTSA1 is well matched to USB VBUS high-side switching because its P-channel enhancement-mode topology allows direct gate drive from a 3.3 V GPIO without a charge pump. With -60 V VDS rating, the device absorbs USB fault transients and inductive kickback from cable harnesses. The SOT-223 exposed tab provides a low thermal resistance path to the copper pour, keeping junction temperature low at typical 500 mA to 1 A USB loads. Source current is drawn through Pin 3 to the load while the drain tab connects to VBUS via a wide copper pour, minimizing voltage drop.
Được đề xuất
12V/24V Industrial Load Switching
In industrial 24 V control modules, the BSP315PH6327XTSA1 provides robust high-side switching for solenoids, relays, and indicator loads. Its -60 V VDS rating provides 2.5x headroom over a 24 V nominal bus, tolerating load-dump transients common in industrial environments. The device's avalanche-rated body diode safely commutates inductive loads, while the 1.8 W power dissipation envelope supports continuous operation at moderate currents. A gate pull-up resistor to VBUS keeps the switch off during MCU reset, and a TVS clamp protects against inductive kickback above 60 V.
Được đề xuất
Reverse-Polarity Battery Protection
The BSP315PH6327XTSA1 in a source-follower configuration provides compact reverse-polarity protection for single-cell Li-ion and multi-cell battery packs up to 12 V. When the battery is inserted correctly, the P-channel MOSFET is held off by a pull-up to the source (battery+), and a small NPN or logic signal pulls the gate low to enable load current. On reverse insertion, the gate-source voltage becomes positive, holding the MOSFET firmly off and protecting downstream circuitry. The -60 V rating provides ample margin for battery transient voltages during hot-plug events.
Được đề xuất
DC-DC Converter Synchronous Rectifier
In low-power buck or boost converters operating from 12 V or 24 V rails, the BSP315PH6327XTSA1 can serve as the synchronous rectifier on the low-voltage side of an isolated flyback topology. Its P-channel configuration simplifies the gate-drive timing relative to N-channel synchronous rectifiers, which require level-shifted gate drive. The low on-state resistance and fast body-diode recovery reduce switching losses and improve converter efficiency at moderate switching frequencies. Ensure the controller's dead-time is properly tuned to prevent shoot-through.
Được đề xuất
Portable and Battery-Powered Device Load Management
The BSP315PH6327XTSA1 enables per-rail load management in portable electronics such as handheld instruments, wireless sensor nodes, and IoT peripherals. The P-channel topology allows GPIO-controlled power gating to radios, displays, and sensor clusters without a charge pump, saving quiescent current during sleep. Its -60 V rating tolerates USB charging transients and adapter hot-plug events. The SOT-223 footprint with exposed drain tab provides a low-profile thermal solution for compact enclosures where board space is limited.
Được đề xuất
LED Driver High-Side Switch
In LED driving applications where the LED string anode is tied to a 12 V or 24 V supply rail, the BSP315PH6327XTSA1 enables efficient PWM dimming by switching the high-side return path of the LED string. The P-channel configuration allows the gate to be driven directly from a microcontroller PWM output, eliminating the level-shifter required for an N-channel high-side switch. The -60 V VDS rating provides substantial margin for automotive and industrial LED driver designs, and the avalanche body diode safely commutates the LED string's parasitic inductance during PWM transitions.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSP315PH6327XTSA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSP316PH6327XTSA1 | BSP88H6327XTSA1 | BSL308PEH6327XTSA1 | BSS205NH6327XTSA1 | BSS169H6327XTSA1 | BSD235CH6327XTSA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-SOT223-4 | PG-SOT223-4 (same) | PG-SOT89-4 | PG-TSOP-6 | PG-SOT23-3 | PG-SOT23-3 | PG-SOT363-6 (dual) |
| FET Type / Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel (dual) |
| Technology | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS |
Bảo phân biệt quan trọng
- Direct logic-level GPIO drive without charge pump (vsN-channel high-side MOSFET)
- SOT-223 exposed tab provides superior thermal performance (vsSOT-23-packaged P-channel MOSFETs (BSS205NH6327XTSA1, BSS169H6327XTSA1))
- Drop-in upgrade path to higher VDS within same footprint (vsCross-brand SOT-223 P-channel MOSFETs (e.g. Vishay Si2343CDS))
Ghi chú thiết kế
Estimated: at VIN=12V, RDS(on)=0.5 ohm (assumed typical), and ID=1 A continuous, power dissipation is approximately PD = I^2 x RDS(on) = 0.5 W. The SOT-223 package has theta_JA around 62 C/W on a standard JEDEC test board, yielding a junction temperature rise of 31 C above ambient at 0.5 W - well within the 150 C rating. For sustained 1.17 A operation, solder the exposed drain tab to at least 100 mm^2 of 2 oz copper pour to keep junction temperature below 100 C at 40 C ambient.
Route the gate trace away from drain-source switching nodes to minimize dv/dt-induced gate coupling. Keep the gate trace short and place a 10 kohm gate-source resistor close to the gate pin to suppress parasitic oscillation. The exposed drain tab must be soldered to a continuous copper pour; starved thermal vias under the tab dramatically reduce thermal performance and should be filled if top-side cooling is required.
Do not exceed ±20 V on the gate-source pins; transient VGS spikes above 20 V can punch through the gate oxide and permanently damage the MOSFET. For inductive load switching, add a TVS diode or RC snubber across the load to clamp drain-voltage spikes within the -60 V avalanche rating. Do not parallel BSP315PH6327XTSA1 devices without gate-source resistors on each device - mismatched threshold voltages can force unequal current sharing and thermal runaway.
When driving the gate from a microcontroller GPIO, ensure the GPIO can sink adequate current to overcome the gate charge during turn-off - typical Qg for an OptiMOS P-channel at this class is in the single-digit nC range, well within 3.3 V GPIO drive capability. Add a series gate resistor of 10-100 ohm to damp LC ringing between the gate inductance and the MOSFET's Ciss. For PWM dimming above 1 kHz, verify that switching losses (Eoss + Pdrive) remain within the package thermal budget.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Lead-free PG-SOT223-4 package. Not AEC-Q100 qualified as standard grade; AEC-Q101 automotive variants may be available under different ordering codes.
