1EBN1001AEXUMA1 vs TLE9180D32QKXUMA1 比較

詳細並排比較 1EBN1001AEXUMA1 由 Infineon 與 TLE9180D32QKXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
TLE9180D32QKXUMA1 TLE9180D32QKXUMA1 - 6-Ch BLDC Gate Driver 90V LQFP-64 | Infineon

TLE9180D32QKXUMA1 - 6-Ch BLDC Gate Driver 90V LQFP-64 | Infineon

TLE9180D32QKXUMA1 ✓ 啟用中

規格比較

參數 1EBN1001AEXUMA1 TLE9180D32QKXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Isolated single-channel IGBT/MOSFET gate driver booster —
Series EiceDRIVER™ Boost (1EBN family) —
Configuration High-Side / Low-Side (non-inverting booster) —
輸出數量 2 (separate source and sink paths) —
Peak Output Current ±15 A —
Number of Drivers 1 —
Input Signal ASC input, active-clamping disable —
Active Clamping Yes (very fast reaction time) —
封裝 PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) PG-LQFP-64-27 (LQFP-64 EP)
安裝類型 Surface Mount Surface Mount
工作溫度 -40 °C to +125 °C (automotive grade) -40 C to +150 C junction
Automotive Qualification AEC-Q100 qualified —
MSL 等級 [DATA_NEEDED: MSL level] —
RoHS 狀態 Compliant —
Target Switching Stage Motor drives > 10 kW (up to 400 A modules) —
Number of Channels — 6 (3 high-side + 3 low-side)
Driver Configuration — Half-Bridge, 3-phase
Supply Voltage Range (VS) — 5.5 V to 72 V
Maximum Pin Voltage — 90 V (bridge, motor and supply pins)
Gate Drive Current — 1 A source/sink
Battery Support — 12 V, 24 V and 48 V systems
介面 — SPI (16-bit) with diagnostics
Current Sense Amplifier — Integrated, adjustable gain
Functional Safety — ASIL-C capable (per ISO 26262)
Package Dimensions — 10 mm x 10 mm x 1.4 mm
AEC-Q100 — Qualified
RoHS — Compliant

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