1EDB8275FXUMA1 vs 2ED2183S06FXUMA1 比較

詳細並排比較 1EDB8275FXUMA1 由 Infineon 與 2ED2183S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1EDB8275FXUMA1 1EDB8275FXUMA1 - 5.4/9.8A Isolated Gate Driver | Infineon

1EDB8275FXUMA1 - 5.4/9.8A Isolated Gate Driver | Infineon

1EDB8275FXUMA1 ✓ 啟用中
Infineon
2ED2183S06FXUMA1 2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 ✓ 啟用中

規格比較

參數 1EDB8275FXUMA1 2ED2183S06FXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Single-channel isolated gate driver —
Number of Channels 1 —
Isolation Type Magnetic coupling (coreless transformer) —
Isolation Voltage (Vrms) 3000 Vrms —
Peak Source Current (typ.) 5.4 A —
Peak Sink Current (typ.) 9.8 A —
CMTI (min.) 300 V/ns —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay value] —
Output-side Supply Voltage Up to 40 V (per datasheet family) —
Input-side Supply Voltage [DATA_NEEDED: VCC input range] —
UVLO Yes (input and output side) —
Miller Clamp Available in family —
封裝 PG-DSO-8 (150 mil wide-body) PG-DSO-8-53 (DSO-8)
工作溫度範圍 -40 C to +125 C (industrial) —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Driver Type — Half-Bridge Gate Driver
Number of Drivers — 1
輸出數量 — 1 (half-bridge: high-side + low-side)
Configuration — High Side, Low Side, Non-Inverting
Maximum Offset Voltage — 650 V
Output Current (Sink/Source) — 2.5 A typical
上升時間 — 15 ns
下降時間 — 15 ns
Supply Voltage (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V (typ.)
Logic Input Voltage — 3.3 V / 5 V compatible (HIN, LIN)
Input Type — Non-Inverting
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — VCC and VBS
工作溫度 — -40 C to +125 C
MSL 等級 — 2
Terminal Finish — Tin (e3 per JESD-609)
Technology — SOI (Silicon-On-Insulator)

資料表與資源

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