1EDN7146UXTSA1 vs IR2304SPBF 比較

詳細並排比較 1EDN7146UXTSA1 由 Infineon 與 IR2304SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 啟用中

規格比較

參數 1EDN7146UXTSA1 IR2304SPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Single-channel high-side TDI gate driver —
Maximum Blocking Voltage 200 V —
Input Configuration Truly differential (TDI) —
Output Current (Source / Sink) 1.5 A / 2.5 A —
Propagation Delay [DATA_NEEDED: typical propagation delay ns] —
上升時間 [DATA_NEEDED: typical rise time ns] —
下降時間 [DATA_NEEDED: typical fall time ns] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] —
工作溫度範圍 -40C to +125C -40 C to +125 C
封裝 PG-VSON-1 (6-pin with exposed pad) 8-Pin SOIC (SO-8 N)
安裝類型 Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET —
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant Compliant (Pb-free)
Topology Support Half-bridge, low-side, high-side —
Product Type — Half-Bridge Gate Driver IC
Configuration — High and Low Side, Independent Channels
輸出數量 — 2
Maximum Offset (Bootstrap) Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Output Source/Sink Current — 60 mA / 130 mA
Propagation Delay (Typical) — 220 ns
Input Logic Compatibility — 3.3 V, 5 V, 15 V
Undervoltage Lockout (UVLO) — Both High-Side and Low-Side Channels
Negative Transient Voltage Tolerance — Yes (dV/dt immune)
Logic Input Polarity — Non-Inverting
Technology — HVIC + Latch-Immune CMOS, Monolithic

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