AS4C512M16D4A-62BIN vs H5AN8G6NDJR-XNC 比較
詳細並排比較 AS4C512M16D4A-62BIN 由 Alliance Memory 與 H5AN8G6NDJR-XNC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Alliance Memory
AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BIN ✓ 啟用中
規格比較
| 參數 | AS4C512M16D4A-62BIN | H5AN8G6NDJR-XNC |
|---|---|---|
| 品牌 | Alliance Memory | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $55.68 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | 8 Gb |
| 組織 | 512M x 16 | — |
| Clock Rate | 1600 MHz | — |
| 資料速率 | 3200 Mbps per pin | 3200 Mbps |
| 供應電壓 | 1.14V ~ 1.26V (nominal 1.2V) | — |
| 工作溫度 | -40°C to +95°C | — |
| 封裝 | 96-FBGA (7.5x13mm) | FBGA-96 (13x7.5 mm) |
| 介面 | POD (Pseudo Open Drain) | — |
| CAS 延遲 | Programmable (e.g., 22 cycles) | — |
| Burst Length | 8 (with burst chop 4) | — |
| Refresh | Auto-refresh and self-refresh | — |
| RoHS | Compliant | Compliant |
| 安裝類型 | Surface Mount | — |
| Lead Free | Yes | — |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |