AS4C512M16D4A-62BIN vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of AS4C512M16D4A-62BIN by Alliance Memory and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4A-62BIN
AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BIN β Active
Specification Comparison
| Parameter | AS4C512M16D4A-62BIN | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Alliance Memory | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $55.68 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | 8 Gb |
| Organization | 512M x 16 | β |
| Clock Rate | 1600 MHz | β |
| Data Rate | 3200 Mbps per pin | 3200 Mbps |
| Supply Voltage | 1.14V ~ 1.26V (nominal 1.2V) | β |
| Operating Temperature | -40Β°C to +95Β°C | β |
| Package | 96-FBGA (7.5x13mm) | FBGA-96 (13x7.5 mm) |
| Interface | POD (Pseudo Open Drain) | β |
| CAS Latency | Programmable (e.g., 22 cycles) | β |
| Burst Length | 8 (with burst chop 4) | β |
| Refresh | Auto-refresh and self-refresh | β |
| RoHS | Compliant | Compliant |
| Mounting Type | Surface Mount | β |
| Lead Free | Yes | β |
| Memory Organization | β | 512M x16 |
| Supply Voltage (VDD) | β | 1.2 V (max 1.26 V) |
| Number of Terminals | β | 96 |
| Maximum Operating Temperature | β | 85 Β°C |
| Input/Output Type | β | COMMON |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Data Mask | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |
| CRC Function | β | Yes |
| Write Leveling | β | Yes |
| Asynchronous Reset | β | Yes |