BSS83PH6327XTSA1 vs 2N7002H6327XTSA2 比較
詳細並排比較 BSS83PH6327XTSA1 由 Infineon 與 2N7002H6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS83PH6327XTSA1 | 2N7002H6327XTSA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | P-Channel | — |
| Technology | MOSFET (Metal-Oxide Semiconductor) | OptiMOS (Planar) |
| Drain-Source Voltage (VDS) | -60 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 330 mA | — |
| Pulsed Drain Current (IDM) | 1.3 A | — |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 2.0 ohm (max) | — |
| Gate-Source Threshold Voltage (VGS(th)) | -1 V to -2.5 V (typ) | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Power Dissipation (PD) at TA=25C | 360 mW | — |
| 工作接面溫度 | -55 C to +150 C | — |
| 封裝 | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | Automotive grade per Infineon | Industrial / Commercial Grade |
| Process Technology | SIPMOS / OptiMOS | — |
| RoHS 狀態 | Compliant | Compliant |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) | — | 300 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| 工作溫度範圍 | — | -55C to +150C (Tj) |
| Channel Mode | — | Enhancement |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |