BSZ15DC02KDHXTMA1 vs BSD235CH6327XTSA1 比較
詳細並排比較 BSZ15DC02KDHXTMA1 由 Infineon 與 BSD235CH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ 啟用中規格比較
| 參數 | BSZ15DC02KDHXTMA1 | BSD235CH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ15DC02KDHXTMA1 | — |
| 電晶體類型 | N-Channel + P-Channel (complementary pair) | — |
| Technology | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) | OptiMOS™ low-voltage |
| Drain-to-Source Voltage (VDS) Max | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 5.1 A | 950 mA |
| P-Channel Continuous Drain Current (ID) | 3.2 A | 530 mA (negative polarity) |
| N-Channel RDS(on) Max | [DATA_NEEDED: N-ch RDS(on) value in mohm] | — |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) | — |
| Gate Drive Level | Super Logic level, 2.5 V rated | — |
| Configuration | Common drain (back-to-back source pair) | N+P complementary dual MOSFET |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead-Free / RoHS | Yes / RoHS compliant | — |
| Part Family | — | OptiMOS™ |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Package Type | — | PG-SOT363-6-1 (SOT-363, 6-pin) |
| 工作溫度範圍 | — | -55 °C to +150 °C (junction) |
| Polarity | — | N-channel + P-channel |
| Channel Mode | — | Enhancement |
| RoHS 狀態 | — | Compliant (lead-free) |
| MSL 等級 | — | 1 |
| 腳位數 | — | 6 |