EP3SE110F780I3N vs EP3SE50F780I3G 比較

詳細並排比較 EP3SE110F780I3N 由 Intel 與 EP3SE50F780I3G 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP3SE110F780I3N EP3SE50F780I3G
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 NRND NRND
Family Stratix III E Stratix III E
Logic Elements 107,500 —
Logic Array Blocks (LABs) 4,300 —
Embedded Memory Bits 8,936,448 (approximately 1.1 MB) —
Maximum User I/Os 488 —
Core Voltage 1.1 V (range 1.05 V to 1.15 V) 1.1 V
Process Technology 65 nm CMOS TSMC 40 nm
封裝 780-pin FC-FBGA (Flip-Chip FineLine BGA) 780-pin FC-FBGA (F780) 29x29 mm
工作溫度 -40 °C to +100 °C (Industrial, "I" grade) -40C to +100C (Industrial, I3)
Configuration Interface Passive Serial (PS), Fast Passive Parallel (FPP), JTAG (IEEE 1149.1) —
Boundary-Scan Test Yes, per IEEE Std. 1149.1 —
Speed Grade 3 (Fast) 3
PLLs Yes, with global and regional clock networks —
安裝類型 Surface Mount (BGA) Surface Mount (BGA)
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL level] 3
Supply Voltage Tolerance 1.05 V to 1.15 V —
Logic Elements (LE) — 47,500
Adaptive Logic Modules (ALM) — 19,000
Embedded Memory — 8.7 Mbits (M9K + M144K blocks)
DSP Blocks — 264 (18x18 multipliers)
Maximum User I/O Pins — 488
Transceivers — 12 channels, up to 3.75 Gbps
Memory Interfaces — DDR3 up to 800 MHz, DDR2, QDR II+ SRAM
PCI Express Hard IP — Gen1 x1/x4/x8
Lead-Free — Yes

資料表與資源

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