H5AN4G6NBJR-UHC vs H5AN4G6NBJR-RDC 比較

詳細並排比較 H5AN4G6NBJR-UHC 由 SK hynix 與 H5AN4G6NBJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN4G6NBJR-UHC H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC ✓ 啟用中
SK hynix
H5AN4G6NBJR-RDC H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix

H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix

H5AN4G6NBJR-RDC ✓ 啟用中

規格比較

參數 H5AN4G6NBJR-UHC H5AN4G6NBJR-RDC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
記憶體容量 4 Gbit —
組織 256M x 16 256M x 16
Clock Frequency 1.6 GHz —
Supply Voltage (VDD) 1.14 V to 1.26 V —
Technology CMOS —
工作溫度 -40C to +95C —
封裝 FBGA-96 (PBGA-96) —
安裝類型 Surface Mount Surface Mount
Self Refresh Auto self-refresh Auto / Self Refresh
Data Mask Function Yes (DM) Yes
Asynchronous Reset Yes (RESET_n) Yes
On-Die Termination Dynamic ODT Dynamic ODT
ZQ Calibration Yes Yes
Write Leveling Yes Yes
CRC Function Yes (command/address CRC) Yes
RoHS 狀態 Compliant —
Density — 4 Gb
供應電壓 — 1.2 V
介面 — CMOS, fully synchronous
Package Code — TFBGA (FBGA-96)
Package Shape — Rectangular
Package Width — 7.5 mm
Number of Terminals — 96
Temperature Grade — OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet
Lead-Free / Halogen-Free — Yes (per datasheet cover: Lead-Free & Halogen-Free)
Speed Grade — -RDC (see manufacturer datasheet for validated data-rate bin)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價