H5AN4G8NBJR-UHC vs H5AN4G8NBJR-VKIR 比較

詳細並排比較 H5AN4G8NBJR-UHC 由 SK hynix 與 H5AN4G8NBJR-VKIR 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN4G8NBJR-UHC H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC ✓ 啟用中
SK hynix
H5AN4G8NBJR-VKIR H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR ✓ 啟用中

規格比較

參數 H5AN4G8NBJR-UHC H5AN4G8NBJR-VKIR
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gb
組織 512M x 8 512M x 8
資料速率 2400 Mbps (PC2400) 2666 Mbps per pin
供應電壓 1.2 V —
介面 DDR4 (JEDEC) —
封裝 TFBGA-78 (11 x 7.5 mm) 78-ball FBGA
安裝類型 Surface Mount Surface Mount
Technology CMOS DRAM CMOS DRAM
Lifecycle Code Active —
RoHS 狀態 Compliant (Rohs Code: Yes) —
REACH Compliance Compliant —
Manufacturer SK Hynix Inc. —
工作溫度 [DATA_NEEDED: operating temperature range] —
CAS 延遲 [DATA_NEEDED: CAS latency for -UHC speed bin] [DATA_NEEDED: CAS latency]
Refresh [DATA_NEEDED: refresh rate 1x/2x/4x support] [DATA_NEEDED: refresh interval specification]
Supply Voltage (VDD) — 1.2 V
Operating Temperature (Industrial) — -40C to +85C (case)
Extended Temperature Range — +85C to +95C (case, per datasheet conditions)
Product Family — H5AN4G4/6/8NBJR series
Speed Grade Code — -VKI
Packing Suffix — R (Tape & Reel)
VPP Supply — [DATA_NEEDED: VPP supply voltage]
Package Dimensions — [DATA_NEEDED: package dimensions]

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