H5AN8G6NAFR-RDC vs H5AN8G6NAFR-UHC 比較

詳細並排比較 H5AN8G6NAFR-RDC 由 SK hynix 與 H5AN8G6NAFR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G6NAFR-RDC H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC ✓ 啟用中
SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC ✓ 啟用中

規格比較

參數 H5AN8G6NAFR-RDC H5AN8G6NAFR-UHC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM (CMOS)
Memory Density 8 Gb 8 Gbit
組織 512M x 16 512M x 16
供應電壓 1.2 V 1.2 V
介面 DDR4 (JEDEC-standard) —
Access Mode Multi Bank Page Burst —
Package Code TFBGA —
Package Shape Rectangular —
Number of Terminals 96 —
安裝類型 Surface Mount Surface Mount
Temperature Grade OTHER (per Partstack listing) —
Technology CMOS —
RoHS 狀態 Compliant (Lead-Free & Halogen-Free) [DATA_NEEDED: RoHS status]
Speed Grade -RDC (see datasheet for bin timing) —
Family H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC —
Max Clock Rate [DATA_NEEDED: max clock rate for -RDC bin] —
工作溫度 [DATA_NEEDED: operating temperature range] 0C to +85C
資料速率 — 2400 MT/s
Clock Architecture — Differential clock (CK_t / CK_c), fully synchronous
封裝 — 96-ball FBGA (TFBGA)
Refresh — Auto self-refresh
Precharge — Auto precharge function
Reset — Asynchronous reset function
Data Mask — DM function supported
Termination — Dynamic on-chip termination (ODT)
Calibration — ZQ calibration function
Error Checking — CRC function
Write Leveling — Write leveling function supported

資料表與資源

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