H5AN8G6NCJR-RDC vs H5AN8G6NCJR-VKC 比較
詳細並排比較 H5AN8G6NCJR-RDC 由 SK hynix 與 H5AN8G6NCJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G6NCJR-RDC | H5AN8G6NCJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $19.69 | — |
| Memory Density | 8 Gb (8589934592 bit) | — |
| 組織 | 512M x 16 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Technology | CMOS | — |
| Package Code | TFBGA (PBGA96) | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Temperature Grade | OTHER | — |
| Data Rate Family | [DATA_NEEDED: specific speed grade Mbps] | — |
| Supply Voltage Class | [DATA_NEEDED: nominal VDD per datasheet speed bin] | — |
| 工作溫度範圍 | [DATA_NEEDED: min/max C per -RDC bin] | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling | Yes | — |
| CRC | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS 狀態 | Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet) | Compliant |
| 記憶體容量 | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| 資料速率 | — | 2666 Mbps (MT/s) |
| Clock Frequency | — | 1.333 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| 介面 | — | Parallel |
| 工作溫度 | — | 0C to +95C |
| 封裝 | — | FBGA-96 |
| Standby Current | — | 28 mA |
| Operating Current | — | 45 mA |
| 功能特色 | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Lead-Free / Halogen-Free | — | Yes (per datasheet description) |
| 生命週期狀態 | — | Active |