H5AN8G8NCJR-UHC vs K4A8G085WB-BCWE 比較
詳細並排比較 H5AN8G8NCJR-UHC 由 SK hynix 與 K4A8G085WB-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NCJR-UHC | K4A8G085WB-BCWE |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $12.30 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 組織 | 1G x 8 | 1G x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| 封裝 | FBGA-78 | 78-ball FBGA |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| RoHS Code | Yes | — |
| REACH Compliance | Yes (per distributor record) | — |
| Lead-Free | Yes (family documented as Lead-Free & Halogen-Free) | — |
| 無鹵素 | Yes | — |
| Part Life Cycle Code | Active | — |
| Access Type | Synchronous, both clock edges (DDR) | — |
| Memory Configuration | Bank-group architecture DDR4 | — |
| Die Revision | CJR (C-die family) | — |
| Manufacturer | SK hynix Inc. | — |
| 資料速率 | — | 3200 Mbps |
| Die Classification | — | B-die |
| 介面 | — | DDR4 (SSTL12) |
| Application Domain | — | Server, industrial control, networking, embedded systems |
| VREF AC-Noise Derating | — | +/-1% of VDD included in timing deratings |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS compliance statement] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |
| Package Body Size | — | [DATA_NEEDED: package dimensions in mm] |