H5ANAG4NBJR-UHC vs H5AN4G8NBJR-UHC 比較
詳細並排比較 H5ANAG4NBJR-UHC 由 SK hynix 與 H5AN4G8NBJR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG4NBJR-UHC | H5AN4G8NBJR-UHC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 組織 | 256M x16 | 512M x 8 |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| Clock / Data Rate | 1.6 GHz | — |
| 封裝 | FBGA-96 (PBGA96) | TFBGA-78 (11 x 7.5 mm) |
| 工作溫度 | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| 介面 | CMOS, DDR4 (double data rate) | DDR4 (JEDEC) |
| Data Mask (DM) | Yes | — |
| Asynchronous Reset | Yes | — |
| On-Die Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Self-Refresh | Yes | — |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| RoHS 狀態 | Compliant | Compliant (Rohs Code: Yes) |
| CAS 延遲 | [DATA_NEEDED: CAS Latency / speed bin detail] | [DATA_NEEDED: CAS latency for -UHC speed bin] |
| 資料速率 | — | 2400 Mbps (PC2400) |
| 供應電壓 | — | 1.2 V |
| Technology | — | CMOS DRAM |
| Lifecycle Code | — | Active |
| REACH Compliance | — | Compliant |
| Manufacturer | — | SK Hynix Inc. |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x/4x support] |