H5ANAG8NCMR-VKC vs H5ANAG8NAMR-UHC 比較
詳細並排比較 H5ANAG8NCMR-VKC 由 SK hynix 與 H5ANAG8NAMR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG8NCMR-VKC | H5ANAG8NAMR-UHC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| 資料速率 | 2666 Mbps/pin (DDR4-2666) | DDR4-2400 (2400 MT/s) |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 封裝 | FBGA-78 | FBGA-78 |
| 安裝類型 | Surface Mount | Surface Mount |
| Speed Grade | VK (per SK hynix speed-bin suffix) | — |
| Power Class | Normal Power | — |
| Bank Groups | 4 | — |
| Banks Total | 16 | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CAS 延遲 | [DATA_NEEDED: CAS latency for VK speed bin] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant (lead-free FBGA package) |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Manufacturer Process | CMOS DRAM | — |
| Manufacturer | — | SK Hynix |
| Density | — | 16 Gbit |
| 組織 | — | 2G x 8 |
| 供應電壓 | — | 1.2 V |
| 介面 | — | Parallel, DDR4 |
| Bank Group Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| Refresh | — | Self-refresh and auto-refresh (DDR4) |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |
| Applications | — | Data storage, firmware boot, industrial controllers, computing modules |