H5CG48MEBDX014N vs K4RAH086VB-BCQK 比較
詳細並排比較 H5CG48MEBDX014N 由 SK hynix 與 K4RAH086VB-BCQK 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5CG48MEBDX014N | K4RAH086VB-BCQK |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $41.02 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM (Volatile DRAM) |
| Density | 16 Gbit | — |
| 組織 | 2G x 8 | — |
| 資料速率 | 4800 Mbps | 4800 Mbps |
| 供應電壓 | 1.1 V | 1.1 V |
| Row Address | 12 bits | — |
| Column Address | 9 bits | — |
| Die Generation | M-die | — |
| 工作溫度 | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| 封裝 | FBGA-82 (11 x 10 mm) | FBGA-82 |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面類型 | Parallel, DDR5 | — |
| Memory Class | Synchronous DRAM | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Speed Class | DDR5-4800 (PC5) | — |
| 記憶體容量 | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| 介面 | — | Parallel |
| Technology | — | DDR5 |
| ECC | — | On-die ECC |
| Product Status | — | Active |
| Operating Mode | — | DLL Enabled mode |
| Series | — | K4RAH0x6VB (DDR5 16Gb B-die family) |
| Packaging | — | Tray |
| Refresh Rate | — | [DATA_NEEDED: refresh specification] |