H5CG48MEBDX014N - DDR5 16Gb 4800Mbps SDRAM | SK Hynix
MPN： H5CG48MEBDX014N ✓ 啟用中H5CG48MEBDX014N 概覽
DDR5 SDRAM (double data rate fifth generation synchronous dynamic random-access memory) is the current generation of main-memory DRAM used in servers, workstations, desktop PCs, and high-performance embedded systems. In the memory hierarchy, DRAM sits below CPU caches and above storage, providing the primary working memory for processors. DDR5 doubles the bank groups and banks per device versus DDR4, splits the power supply so VDDQ is separate from VDD, and moves the power management onto the module via PMIC, delivering higher bandwidth and better power efficiency than DDR4 SDRAM.
Key features of the H5CG48MEBDX014N include 16 Gbit density organized as 2G x 8, a 4800 Mbps (PC5-class) data transfer rate, a low 1.1 V nominal core operating voltage, and an operating temperature range of 0C to +95C as listed by distributors. The part carries 12 row address bits and 9 column address bits, per Octopart documentation, giving the addressing structure used in modern DDR5 memory controllers. The x8 organization simplifies ECC-based server module designs where multiple x8 devices provide chipkill-class error coverage.
The M-die generation uses SK Hynix advanced DRAM process technology to achieve the 4800 Mbps speed grade at JEDEC-standard DDR5 voltage levels. On-die termination, decision-feedback equalization, and same-bank refresh enhancements characteristic of DDR5 enable reliable signaling at these data rates on standard PCB stackups.
Typical applications include server and datacenter DIMMs, desktop and workstation UDIMMs, AI accelerators and high-performance computing boards, industrial systems requiring high memory bandwidth, and embedded compute designs.
Design consideration: DDR5 routing requires careful length matching of DQ/CA buses and proper VDDQ decoupling; always validate speed-bin settings and refresh configuration in the memory controller against the manufacturer datasheet.
This page synthesizes distributor pricing, cross-referenced drop-in alternatives including SK Hynix A-die and Samsung equivalents, and supply-chain availability data not found in the manufacturer datasheet.
直接替換替代品，適用於 H5CG48MEBDX014N — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5CG48MEBDX014N （相同外形與佔位） — 差異在於 Package, Data Rate, Organization, Density, Interface.
H5CG48MEBDX018N
✅ 直接替換聯絡詢價
查看資料表 →H5CG48AGBDX014N
✅ 直接替換聯絡詢價
查看資料表 →H5CG48AGBDX018N
✅ 直接替換✗ 缺貨
$87.42 / 單位
查看資料表 →H5CG48AGBDX014
✅ 直接替換聯絡詢價
查看資料表 →H5CG46AGBDX017N
✅ 直接替換聯絡詢價
查看資料表 →K4RAH086VB-BCQK
✅ 直接替換✓ 有庫存
$41.0156 / 單位
查看資料表 →H5CG48MEBDX014N 最大額定值與電氣特性
| 記憶體類型 | DDR5 SDRAM |
| Density | 16 Gbit |
| 組織 | 2G x 8 |
| 資料速率 | 4800 Mbps |
| 供應電壓 | 1.1 V |
| Row Address | 12 bits |
| Column Address | 9 bits |
| Die Generation | M-die |
| 工作溫度 | 0C to +95C |
| 封裝 | FBGA-82 (11 x 10 mm) |
| 安裝類型 | Surface Mount |
| 介面類型 | Parallel, DDR5 |
| Memory Class | Synchronous DRAM |
| RoHS 狀態 | Compliant |
| Speed Class | DDR5-4800 (PC5) |
H5CG48MEBDX014N fbga-82 (11 x 10 mm) 腳位配置指南
H5CG48MEBDX014N（fbga-82 (11 x 10 mm) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： H5CG48MEBDX014N.
請參閱 資料表 以查看完整腳位配置。
典型應用
H5CG48MEBDX014N 適用於 6 應用s: Server and Datacenter DIMMs, AI Accelerator and HPC Boards, Desktop and Workstation UDIMMs, Industrial and Embedded Computing, Networking and Telecommunications Equipment, Consumer Electronics and Smart Devices.
Server and Datacenter DIMMs
Server main memory is the primary application for the H5CG48MEBDX014N. Its x8 organization enables ECC-based RDIMM/LRDIMM designs where each memory symbol maps to a single device, delivering chipkill-class fault coverage for cloud and enterprise platforms. The DDR5-4800 speed bin aligns with current Intel Xeon and AMD EPYC memory specifications, while the 1.1 V operation lowers per-module power versus DDR4, reducing datacenter cooling load. The device is soldered onto module PCBs with length-matched fly-by command/address routing and onboard PMIC voltage conversion; the 16 Gb density allows 32 GB and 64 GB module capacity points with fewer devices per rank.
推薦
AI Accelerator and HPC Boards
AI training and inference boards use DDR5 as high-capacity host-side memory feeding accelerators, where the H5CG48MEBDX014N's 16 Gbit density and 4800 Mbps rate provide the bandwidth needed for model weights and activation buffers. According to the HTElec DDR5 comparison guide, this part class is explicitly targeted at AI computing and high-performance embedded designs. In these boards, multiple x8 devices form wide 288-bit (ECC-protected) buses; the split VDD/VDDQ rails and on-die termination of DDR5 maintain signal integrity at 4800 MT/s across long PCB traces typical of accelerator form factors.
推薦
Desktop and Workstation UDIMMs
Consumer and workstation UDIMMs use H5CG48MEBDX014N-class DDR5 devices to reach 16 GB, 32 GB, and 48 GB capacity points at DDR5-4800 speeds. The 1.1 V core voltage and DDR5's on-module PMIC simplify board power design, while x8 organization supports ECC on workstation platforms. In UDIMM assembly, the FBGA-82 devices are mounted on both sides of the PCB with fly-by CA routing; the 0C to +95C operating range covers standard desktop thermal envelopes. Its 4800 Mbps bin matches the memory specifications of mainstream desktop CPUs, making it a high-volume choice for PC OEM module builders.
推薦
Industrial and Embedded Computing
Industrial controllers, edge servers, and network appliances embed DDR5 SO-DIMMs or solder-down memory using parts like the H5CG48MEBDX014N for high-bandwidth data logging, machine vision, and protocol processing. Alibaba listings for this MPN cite industrial control and telecommunications among target uses. The 16 Gbit density allows compact single-device SO-DIMM designs, and DDR5's lower 1.1 V operation reduces thermal design constraints in fanless enclosures. Designers should validate the 0C to +95C operating range against enclosure temperatures and derate bandwidth accordingly in sustained-traffic industrial workloads.
推薦
Networking and Telecommunications Equipment
Routers, switches, and 5G baseband cards require large, fast working memory for packet buffering, flow tables, and control planes, making the H5CG48MEBDX014N a fit for networking line-card designs. Its 4800 Mbps rate supplies the random-access bandwidth needed for high packet-per-second processing, while the 16 Gbit density supports deep buffer scenarios in aggregation and core platforms. Broker channels serving telecom OEMs list this MPN for line-card memory upgrades. In these designs, x8 devices with ECC provide the reliability demanded by carrier-grade uptime requirements, and DDR5 refresh enhancements keep effective bandwidth high under load.
推薦
Consumer Electronics and Smart Devices
Premium consumer electronics - smart TVs, gaming peripherals, set-top boxes, and mini PCs - integrate DDR5 components such as the H5CG48MEBDX014N where the 16 Gbit single-device density enables compact main-memory subsystems. Wolfchip product documentation lists consumer electronics and computing devices among the target applications for this DRAM. The 1.1 V operation meets energy-efficiency expectations of modern consumer platforms, and the FBGA-82 footprint is compatible with cost-optimized 4-layer module PCBs. Designers benefit from DDR5's improved power management architecture, which shifts regulation to a low-cost PMIC and reduces board-level voltage rail count.
推薦
推薦產品摘要
工程參考資料，適用於 H5CG48MEBDX014N — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5CG48MEBDX018N | H5CG48AGBDX014N | H5CG48AGBDX018N | K4RAH086VB-BCQK |
|---|---|---|---|---|---|
| Package | FBGA-82 (11x10 mm) | FBGA-82 (11x10 mm) - same | FBGA-82 (11x10 mm) - same | FBGA-82 (11x10 mm) - same | FBGA-82 (11x10 mm) - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Data Rate | 4800 Mbps | 4800 Mbps family, faster speed suffix | 4800 Mbps | 4800 Mbps family, faster speed suffix | 4800 Mbps class |
| Operating Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
主要差異化特點
- Lower-risk availability via M-die second generation (對比H5CG48AGBDX018N)
- Faster-bin upgrade path within identical footprint (對比H5CG48MEBDX018N)
- JEDEC-standard FBGA-82 enables cross-brand dual sourcing (對比K4RAH086VB-BCQK)
設計說明
DDR5-4800 signaling demands strict fly-by routing of command/address lines with per-byte DQ/DM/DQS length matching per the DDR5 DIMM design guides. Keep DQ trace skew within the controller's training window, use on-die termination settings from the manufacturer datasheet, and simulate eye diagrams at 4800 MT/s on your PCB stackup. Multi-rank configurations amplify stub effects, so validate with full-population modules before locking the layout.
The H5CG48MEBDX014N runs on a 1.1 V core with separate VDD and VDDQ domains per DDR5 architecture. On module designs, generate the 1.1 V rail with a dedicated PMIC (12 V auxiliary input on standard DIMMs). Decouple each supply ball with an array of ceramic capacitors placed within a few millimeters; DDR5 burst currents at 4800 MT/s create high di/dt events that demand low-inductance power delivery to avoid droop-triggered refresh retries.
When substituting M-die for A-die parts (e.g., H5CG48MEBDX014N for H5CG48AGBDX018N), retrain memory on first boot: SPD data, timing tables, and equalization presets differ between die generations even within the same footprint. Counterfeit risk is documented in the broker channel (mislabeled parts failing above 4400 MT/s per community reports), so buy from authorized distributors and verify date codes and speed bins by test.
合規資訊
JLCPCB lists the H5CG48MEBDX014N as ROHS compliant. Other compliance attributes not stated in provided data.
