H5TC4G63CFR-H9I vs H5TC4G63CFR-H9A 比較

詳細並排比較 H5TC4G63CFR-H9I 由 SK hynix 與 H5TC4G63CFR-H9A 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5TC4G63CFR-H9I H5TC4G63CFR-H9I - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63CFR-H9I - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63CFR-H9I ✓ 啟用中
SK hynix
H5TC4G63CFR-H9A H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A ✓ 啟用中

規格比較

參數 H5TC4G63CFR-H9I H5TC4G63CFR-H9A
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR3L SDRAM DDR3L SDRAM
Density 4 Gb —
組織 256M x 16 256M x 16
供應電壓 1.35 V —
I/O Voltage 1.35 V —
資料速率 1866 Mbps (PC3-14900) [DATA_NEEDED: Data rate (e.g., 1866 Mbps)]
封裝 96-ball TFBGA 96-ball TFBGA
Temperature Grade Industrial (-40°C to +95°C) —
Number of Terminals 96 96
Memory Width 16 bits —
Lead-Free Yes Yes
無鹵素 Yes Yes
RoHS Compliant Yes —
CAS 延遲 Programmable (11, 12, 13) [DATA_NEEDED: CAS latency]
Burst Length 8 and 4 8, 4 (with burst chop)
On-Die Termination Yes —
Refresh Modes Auto-refresh, Self-refresh —
Memory Density — 4Gb (4294967296 bit)
Supply Voltage (VDD) — 1.35V + 0.100 / - 0.067V
Supply Voltage (VDDQ) — 1.35V + 0.100 / - 0.067V
Package Shape — RECTANGULAR
工作溫度範圍 — [DATA_NEEDED: Operating temperature range]
RoHS 狀態 — Compliant
Differential Clock Inputs — Yes (CK, CK)
Differential Data Strobe — Yes (DQS, DQS)
On-Chip DLL — Yes
DM (Data Mask) — Yes

資料表與資源

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