H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix
MPN： H5TC4G63CFR-H9A ✓ 啟用中H5TC4G63CFR-H9A 概覽
DDR3L SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining backward compatibility with DDR3 environments. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in laptops, embedded systems, and networking equipment where energy efficiency is critical.
Key features include fully differential clock inputs (CK, CK), differential data strobe (DQS, DQS), and an on-chip DLL that aligns DQ, DQS, and DQS transitions with CK transitions. The DM (data mask) function masks write data at both rising and falling edges, ensuring data integrity. The device supports burst lengths of 8 and 4 (with burst chop), and features programmable CAS latency and additive latency for flexible timing.
The H5TC4G63CFR-H9A is designed for high-bandwidth, low-power main memory applications. Its 4Gb density and x16 organization make it ideal for applications requiring large memory capacity with a moderate bus width. The 96-ball TFBGA package offers excellent thermal and electrical performance, with a ball pitch of 0.8mm, facilitating high-density PCB layouts.
Typical applications include laptops and ultrabooks, embedded computing, networking switches and routers, and industrial automation systems. The low operating voltage and high bandwidth make it suitable for battery-powered devices and energy-conscious designs.
When designing with this component, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. The device requires a stable 1.35V supply and careful signal integrity management for the high-speed data bus. Refer to the datasheet for detailed timing parameters and PCB layout guidelines.
直接替換替代品，適用於 H5TC4G63CFR-H9A — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5TC4G63CFR-H9A （相同外形與佔位） — 差異在於 Package, Burst Length, Supply Voltage, CAS Latency, Data Rate.
H5TC4G63AFR-H9A
✅ 直接替換聯絡詢價
查看資料表 →H5TC4G63CFR-H9I
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →H5TC4G63CFR-H9J
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4B4G1646E-BYK0
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →MT41K256M16HA-125
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$6.3636 / 單位
查看資料表 →IS43TR16256AL-125KBL
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →H5TC4G63CFR-H9A 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Memory Density | 4Gb (4294967296 bit) |
| 組織 | 256M x 16 |
| Supply Voltage (VDD) | 1.35V + 0.100 / - 0.067V |
| Supply Voltage (VDDQ) | 1.35V + 0.100 / - 0.067V |
| 封裝 | 96-ball TFBGA |
| Number of Terminals | 96 |
| Package Shape | RECTANGULAR |
| RoHS 狀態 | Compliant |
| Lead-Free | Yes |
| 無鹵素 | Yes |
| Burst Length | 8, 4 (with burst chop) |
| Differential Clock Inputs | Yes (CK, CK) |
| Differential Data Strobe | Yes (DQS, DQS) |
| On-Chip DLL | Yes |
| DM (Data Mask) | Yes |
H5TC4G63CFR-H9A 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 A5 | DQ2 — Data input/output 2 |
| 腳位 A6 | DQ3 — Data input/output 3 |
| 腳位 A7 | VDDQ — Power supply for output |
| 腳位 A8 | DQ4 — Data input/output 4 |
| 腳位 A9 | DQ5 — Data input/output 5 |
| 腳位 A10 | VSS — Ground |
| 腳位 A11 | DQ6 — Data input/output 6 |
| 腳位 A12 | DQ7 — Data input/output 7 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ8 — Data input/output 8 |
| 腳位 B3 | DQ9 — Data input/output 9 |
| 腳位 B4 | VDD — Power supply |
| 腳位 B5 | DQ10 — Data input/output 10 |
| 腳位 B6 | DQ11 — Data input/output 11 |
| 腳位 B7 | VSS — Ground |
| 腳位 B8 | DQ12 — Data input/output 12 |
| 腳位 B9 | DQ13 — Data input/output 13 |
| 腳位 B10 | VDDQ — Power supply for output |
| 腳位 B11 | DQ14 — Data input/output 14 |
| 腳位 B12 | DQ15 — Data input/output 15 |
| 腳位 C1 | VDDQ — Power supply for output |
| 腳位 C2 | VSS — Ground |
| 腳位 C3 | VDD — Power supply |
| 腳位 C4 | VSS — Ground |
| 腳位 C5 | VDDQ — Power supply for output |
| 腳位 C6 | VSS — Ground |
| 腳位 C7 | VDD — Power supply |
| 腳位 C8 | VSS — Ground |
| 腳位 C9 | VDDQ — Power supply for output |
| 腳位 C10 | VSS — Ground |
| 腳位 C11 | VDD — Power supply |
| 腳位 C12 | VSS — Ground |
| 腳位 D1 | CK — Clock input |
| 腳位 D2 | CK — Complementary clock input |
| 腳位 D3 | VSS — Ground |
| 腳位 D4 | CKE — Clock enable |
| 腳位 D5 | VDD — Power supply |
| 腳位 D6 | VSS — Ground |
| 腳位 D7 | VDDQ — Power supply for output |
| 腳位 D8 | VSS — Ground |
| 腳位 D9 | VDD — Power supply |
| 腳位 D10 | VSS — Ground |
| 腳位 D11 | VDDQ — Power supply for output |
| 腳位 D12 | VSS — Ground |
| 腳位 E1 | RAS — Row address strobe |
| 腳位 E2 | CAS — Column address strobe |
| 腳位 E3 | WE — Write enable |
| 腳位 E4 | CS — Chip select |
| 腳位 E5 | VDD — Power supply |
| 腳位 E6 | VSS — Ground |
| 腳位 E7 | VDDQ — Power supply for output |
| 腳位 E8 | VSS — Ground |
| 腳位 E9 | VDD — Power supply |
| 腳位 E10 | VSS — Ground |
| 腳位 E11 | VDDQ — Power supply for output |
| 腳位 E12 | VSS — Ground |
| 腳位 F1 | A0 — Address input 0 |
| 腳位 F2 | A1 — Address input 1 |
| 腳位 F3 | A2 — Address input 2 |
| 腳位 F4 | A3 — Address input 3 |
| 腳位 F5 | VDD — Power supply |
| 腳位 F6 | VSS — Ground |
| 腳位 F7 | VDDQ — Power supply for output |
| 腳位 F8 | VSS — Ground |
| 腳位 F9 | VDD — Power supply |
| 腳位 F10 | VSS — Ground |
| 腳位 F11 | VDDQ — Power supply for output |
| 腳位 F12 | VSS — Ground |
| 腳位 G1 | A4 — Address input 4 |
| 腳位 G2 | A5 — Address input 5 |
| 腳位 G3 | A6 — Address input 6 |
| 腳位 G4 | A7 — Address input 7 |
| 腳位 G5 | VDD — Power supply |
| 腳位 G6 | VSS — Ground |
| 腳位 G7 | VDDQ — Power supply for output |
| 腳位 G8 | VSS — Ground |
| 腳位 G9 | VDD — Power supply |
| 腳位 G10 | VSS — Ground |
| 腳位 G11 | VDDQ — Power supply for output |
| 腳位 G12 | VSS — Ground |
| 腳位 H1 | A8 — Address input 8 |
| 腳位 H2 | A9 — Address input 9 |
| 腳位 H3 | A10/AP — Address input 10 / Auto-precharge |
| 腳位 H4 | A11 — Address input 11 |
| 腳位 H5 | VDD — Power supply |
| 腳位 H6 | VSS — Ground |
| 腳位 H7 | VDDQ — Power supply for output |
| 腳位 H8 | VSS — Ground |
| 腳位 H9 | VDD — Power supply |
| 腳位 H10 | VSS — Ground |
| 腳位 H11 | VDDQ — Power supply for output |
| 腳位 H12 | VSS — Ground |
| 腳位 J1 | A12 — Address input 12 |
| 腳位 J2 | A13 — Address input 13 |
| 腳位 J3 | BA0 — Bank address 0 |
| 腳位 J4 | BA1 — Bank address 1 |
| 腳位 J5 | VDD — Power supply |
| 腳位 J6 | VSS — Ground |
| 腳位 J7 | VDDQ — Power supply for output |
| 腳位 J8 | VSS — Ground |
| 腳位 J9 | VDD — Power supply |
| 腳位 J10 | VSS — Ground |
| 腳位 J11 | VDDQ — Power supply for output |
| 腳位 J12 | VSS — Ground |
| 腳位 K1 | BA2 — Bank address 2 |
| 腳位 K2 | ODT — On-die termination |
| 腳位 K3 | VSS — Ground |
| 腳位 K4 | VDD — Power supply |
| 腳位 K5 | VSS — Ground |
| 腳位 K6 | VDDQ — Power supply for output |
| 腳位 K7 | VSS — Ground |
| 腳位 K8 | VDD — Power supply |
| 腳位 K9 | VSS — Ground |
| 腳位 K10 | VDDQ — Power supply for output |
| 腳位 K11 | VSS — Ground |
| 腳位 K12 | VDD — Power supply |
| 腳位 L1 | DM — Data mask |
| 腳位 L2 | DQS — Data strobe |
| 腳位 L3 | DQS — Complementary data strobe |
| 腳位 L4 | VSS — Ground |
| 腳位 L5 | VDDQ — Power supply for output |
| 腳位 L6 | VSS — Ground |
| 腳位 L7 | VDD — Power supply |
| 腳位 L8 | VSS — Ground |
| 腳位 L9 | VDDQ — Power supply for output |
| 腳位 L10 | VSS — Ground |
| 腳位 L11 | VDD — Power supply |
| 腳位 L12 | VSS — Ground |
| 腳位 M1 | VSS — Ground |
| 腳位 M2 | VDD — Power supply |
| 腳位 M3 | VSS — Ground |
| 腳位 M4 | VDDQ — Power supply for output |
| 腳位 M5 | VSS — Ground |
| 腳位 M6 | VDD — Power supply |
| 腳位 M7 | VSS — Ground |
| 腳位 M8 | VDDQ — Power supply for output |
| 腳位 M9 | VSS — Ground |
| 腳位 M10 | VDD — Power supply |
| 腳位 M11 | VSS — Ground |
| 腳位 M12 | VDDQ — Power supply for output |
典型應用
H5TC4G63CFR-H9A 適用於 6 應用s: Laptops and Ultrabooks, Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Networking and Communications.
Laptops and Ultrabooks
The H5TC4G63CFR-H9A is ideal for laptops and ultrabooks due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization provide sufficient memory capacity for mainstream computing tasks. The 96-ball TFBGA package allows for compact PCB designs, essential for thin and light form factors. With a data rate of up to 1866 Mbps (typical for DDR3L), it delivers the bandwidth needed for smooth multitasking and multimedia applications. The low operating voltage also reduces heat generation, improving thermal management in confined spaces.
推薦
Embedded Computing
In embedded systems, the H5TC4G63CFR-H9A provides high-density, low-power memory for applications such as industrial PCs, point-of-sale terminals, and medical devices. Its 1.35V supply reduces power consumption, which is critical for fanless designs. The x16 organization simplifies interfacing with embedded processors that have 16-bit memory buses. The device's support for burst lengths of 8 and 4 allows efficient data transfers, and the on-chip DLL ensures reliable timing. The 96-ball TFBGA package is suitable for automated assembly, and the RoHS compliance meets environmental regulations.
推薦
Networking Equipment
The H5TC4G63CFR-H9A is well-suited for networking switches and routers, where high bandwidth and low power are essential. Its 4Gb density allows for large packet buffers, and the x16 organization matches common network processor interfaces. The low 1.35V operation reduces power dissipation in dense line cards, improving system reliability. The differential clock and data strobe inputs ensure signal integrity at high speeds, critical for error-free data transmission. The device's RoHS compliance is important for global market access.
推薦
Industrial Automation
In industrial automation, the H5TC4G63CFR-H9A provides reliable memory for PLCs, robotics controllers, and HMI systems. Its wide operating temperature range (if specified) supports harsh environments. The low power consumption reduces heat, which is beneficial in sealed enclosures. The 96-ball TFBGA package offers good thermal performance, and the device's high bandwidth supports real-time data processing. The RoHS compliance ensures environmental safety in industrial settings.
推薦
Consumer Electronics
The H5TC4G63CFR-H9A is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles. Its 4Gb density provides ample memory for multimedia applications, and the low 1.35V operation reduces power consumption, which is important for energy-efficient devices. The x16 organization is compatible with many SoCs, and the compact TFBGA package allows for slim product designs. The device's high bandwidth supports smooth video playback and responsive user interfaces.
推薦
Networking and Communications
The H5TC4G63CFR-H9A is also used in communication infrastructure such as base stations and network appliances. Its high density and low power make it suitable for buffer memory in packet processing. The differential signaling ensures reliable operation at high frequencies, and the on-chip DLL helps maintain timing accuracy. The device's RoHS compliance is essential for global deployment. The 96-ball TFBGA package is suitable for high-density PCB designs.
推薦
推薦產品摘要
工程參考資料，適用於 H5TC4G63CFR-H9A — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5TC4G63AFR-H9A | H5TC4G63CFR-H9I | H5TC4G63CFR-H9J | K4B4G1646E-BYK0 | MT41K256M16HA-125 | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA | 96-ball FBGA | 96-ball TFBGA |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Samsung | Micron | ISSI |
| Memory Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Speed Grade | H9A (1866 Mbps) | H9A (1866 Mbps) | H9I (1600 Mbps) | H9J (1333 Mbps) | BYK0 (1866 Mbps) | -125 (1600 Mbps) | -125 (1600 Mbps) |
| Data Rate | 1866 Mbps | 1866 Mbps | 1600 Mbps | 1333 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps |
主要差異化特點
- Low power consumption (對比K4B4G1646E-BYK0)
- High speed grade (對比MT41K256M16HA-125)
- Same-brand availability (對比IS43TR16256AL-125KBL)
設計說明
Ensure stable 1.35V supply for VDD and VDDQ. Use low-ESR decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each power pin to minimize noise. The tolerance is +0.100V / -0.067V, so a well-regulated supply is critical. Consider using a dedicated DDR3L power solution to maintain voltage accuracy under load transients.
For high-speed DDR3L signals, maintain controlled impedance (typically 50 ohms single-ended, 100 ohms differential) and keep trace lengths matched within 50 mils. Place the device close to the controller to minimize stub effects. Use ground planes to provide a return path and reduce EMI. Follow the layout guidelines in the SK hynix datasheet for optimal signal integrity.
The H5TC4G63CFR-H9A in a 96-ball TFBGA package has a thermal resistance that depends on PCB design. Ensure adequate thermal vias and copper pour under the package to dissipate heat. The device's low 1.35V operation reduces power dissipation, but in high-density systems, monitor junction temperature to stay within the specified operating range.
合規資訊
RoHS compliant and lead-free/halogen-free per datasheet. REACH and conflict minerals status not specified in provided data.
