IPC50N04S5L5R5ATMA1 vs IPB014N06NATMA1 比較

詳細並排比較 IPC50N04S5L5R5ATMA1 由 Infineon 與 IPB014N06NATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPC50N04S5L5R5ATMA1 IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 ✓ 啟用中

規格比較

參數 IPC50N04S5L5R5ATMA1 IPB014N06NATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Mode Enhancement Mode —
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID, Tc) 50 A —
Maximum Drain Current (silicon-limited, 25 °C) 60 A —
On-Resistance RDS(on) max @ VGS=10 V 5.5 mΩ —
Gate Threshold VGS(th) Logic Level (enhancement at ≤ 4.5 V VGS) —
Power Dissipation (Tc) 42 W —
Thermal Resistance Junction-to-Case RthJC 3.6 K/W —
工作溫度範圍 -55 °C to +175 °C —
封裝 PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) PG-TO263-7 (D2PAK-7)
安裝類型 Surface Mount Surface Mount
AEC-Q101 Qualification Qualified (automotive grade) —
MSL (Moisture Sensitivity Level) MSL1 —
Peak Reflow Temperature 260 °C —
Avalanche Rating 100 % Avalanche Tested 100% avalanche tested
RoHS / REACH RoHS Compliant (Green Product) —
Transistor Polarity — N-Channel
Continuous Drain Current (ID) at Ta — 34 A
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 214 W
On-Resistance RDS(on) max — 1.4 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
工作接面溫度 — -55 °C to +175 °C
Technology — OptiMOS 5 (trench-gate)
Qualification — JEDEC qualified for target applications
Primary Application — Synchronous rectification, motor control

資料表與資源

瀏覽所有產品 建立 BOM 索取報價