IR2127STRPBF vs IR21271STRPBF 比較

詳細並排比較 IR2127STRPBF 由 Infineon 與 IR21271STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IR2127STRPBF IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF ✓ 啟用中

規格比較

參數 IR2127STRPBF IR21271STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration High-Side High-Side or Low-Side
Supply Voltage Range 12 V to 20 V —
Output Voltage (Offset) up to 600 V —
Peak Source Current 250 mA 250 mA
Peak Sink Current 500 mA 500 mA
Propagation Delay 200 ns (typical) 200 ns typical
Input Logic Non-Inverting —
輸出數量 1 1
上升時間 80 ns (typical) [DATA_NEEDED: rise time]
下降時間 60 ns (typical) [DATA_NEEDED: fall time]
工作溫度範圍 -40C to +125C —
封裝 8-SOIC (3.90 mm body) 8-SOIC (3.90 mm)
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL3 (per JEDEC J-STD-020) —
Lead-Free / RoHS Pb-free (PBF), RoHS compliant Yes (Pb-Free, suffix PBF)
dV/dt Immunity Yes (high-side floating channel) Yes
Integrated Current Sense Yes (cycle-by-cycle comparator) Yes (CS pin + shutdown)
Input Polarity — Non-Inverting
Supply Voltage (VCC) — 9 V to 20 V
High-Side Offset Voltage — 600 V max
工作溫度 — -40C to +125C
Negative Transient Tolerance — Yes (high-side rail)

資料表與資源

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