IRF3007STRLPBF vs IRF1018EPBF 比較

詳細並排比較 IRF3007STRLPBF 由 Infineon 與 IRF1018EPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRF3007STRLPBF IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon

IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon

IRF3007STRLPBF ✓ 啟用中

規格比較

參數 IRF3007STRLPBF IRF1018EPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
單價 (USD) — $0.38
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-to-Source Breakdown Voltage (V(BR)DSS) 75 V —
Continuous Drain Current (Id) at Tc=25°C 62 A —
Pulsed Drain Current (Idm) 250 A —
Static Drain-to-Source On-Resistance (RDS(on)) 12.6 mΩ typical at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 110 nC typical 46 nC
Maximum Power Dissipation (Pd) 120 W at Tc=25°C —
工作接面溫度 -55°C to +175°C —
Thermal Resistance Junction-to-Case (RθJC) 1.0 °C/W —
Thermal Resistance Junction-to-Ambient (RθJA) 40 °C/W —
Package Type D2PAK (TO-263), 3-pin (2+Tab), Surface Mount —
安裝類型 Surface Mount Through Hole
RoHS 狀態 Compliant (Lead-Free, PBF suffix) Compliant
Avalanche Rated Yes (Repetitive Avalanche Allowed up to Tjmax) —
FET Type — N-Channel
Technology — HEXFET (Power MOSFET)
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25C — 79 A
Rds(on) max at Vgs=10V — 8.4 mOhm
Gate Drive Voltage (Vgs) — 10 V (optimized; +/-20 V max)
Power Dissipation (Pd) at Tc=25C — 110 W
工作溫度範圍 — -55 C to +175 C (Tj)
封裝 — TO-220AB (through-hole, 3-lead)
Qualification — JEDEC (Industrial market)
Lead-Free (PBF suffix) — Yes
腳位數 — 3 (Gate, Drain, Source)

資料表與資源

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