IRF3007STRLPBF vs IRF1018EPBF 비교
다음의 상세 나란히 비교: IRF3007STRLPBF 제조: Infineon 및 IRF1018EPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF3007STRLPBF | IRF1018EPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.92 | $0.38 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | 75 V | — |
| Continuous Drain Current (Id) at Tc=25°C | 62 A | — |
| Pulsed Drain Current (Idm) | 250 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 12.6 mΩ typical at VGS=10V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 110 nC typical | 46 nC |
| Maximum Power Dissipation (Pd) | 120 W at Tc=25°C | — |
| 동작 접합 온도 | -55°C to +175°C | — |
| Thermal Resistance Junction-to-Case (RθJC) | 1.0 °C/W | — |
| Thermal Resistance Junction-to-Ambient (RθJA) | 40 °C/W | — |
| Package Type | D2PAK (TO-263), 3-pin (2+Tab), Surface Mount | — |
| 실장 유형 | Surface Mount | Through Hole |
| RoHS 상태 | Compliant (Lead-Free, PBF suffix) | Compliant |
| Avalanche Rated | Yes (Repetitive Avalanche Allowed up to Tjmax) | — |
| FET Type | — | N-Channel |
| Technology | — | HEXFET (Power MOSFET) |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 79 A |
| Rds(on) max at Vgs=10V | — | 8.4 mOhm |
| Gate Drive Voltage (Vgs) | — | 10 V (optimized; +/-20 V max) |
| Power Dissipation (Pd) at Tc=25C | — | 110 W |
| 동작 온도 범위 | — | -55 C to +175 C (Tj) |
| 패키지 | — | TO-220AB (through-hole, 3-lead) |
| Qualification | — | JEDEC (Industrial market) |
| Lead-Free (PBF suffix) | — | Yes |
| 핀 수 | — | 3 (Gate, Drain, Source) |