IRF3205STRLPBF vs IPD100N04S402ATMA1 比較
詳細並排比較 IRF3205STRLPBF 由 Infineon 與 IPD100N04S402ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF3205STRLPBF | IPD100N04S402ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 110 A | — |
| Pulsed Drain Current (Idm) | 390 A | — |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΩ max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 97.3 nC typical | — |
| Power Dissipation (Pd) @ Tc=25°C | 200 W | — |
| 工作溫度範圍 | -55 °C to +175 °C (Tj) | — |
| 封裝 | TO-263-3 (D2PAK) | PG-TO252-3-313 surface-mount DPAK |
| 安裝類型 | Surface Mount | Surface mount |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) | — |
| Technology | HEXFET (advanced process) | — |
| Packaging | Tape & Reel (STRL) | — |
| Channel Type | — | N-channel |
| Operating Mode | — | Enhancement mode |
| Drain-Source Voltage | — | 40 V |
| Continuous Drain Current | — | 100 A at Tc |
| Power Dissipation | — | 150 W at Tc |
| On-Resistance | — | 4.0 mΩ |
| Configuration | — | Single MOSFET with built-in diode |
| 腳位數 | — | 3 pins plus tab |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Testing | — | 100% avalanche tested |
| Minimum Operating Temperature | — | -55°C |
| Maximum Operating Temperature | — | 175°C |
| Peak Reflow Temperature | — | 260°C |
| Moisture Sensitivity Level | — | MSL1 |
| RoHS 狀態 | — | Compliant |
| Package Body Material | — | Plastic/epoxy |
| JEDEC Package Code | — | TO-252 |
| Gate Charge | — | [DATA_NEEDED: gate charge] |
| 閘極臨界電壓 | — | [DATA_NEEDED: gate threshold voltage] |
| Reverse-Biased Safe Operating Area | — | [DATA_NEEDED: SOA data] |