IRFR2405TRPBF vs IRF8736TRPBF 比較
詳細並排比較 IRFR2405TRPBF 由 Infineon 與 IRF8736TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR2405TRPBF | IRF8736TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET) | StrongIRFET / HEXFET |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 56 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | — |
| Total Gate Charge (Qg) | 70 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 | TO-252AA (DPAK) | SO-8 (8-SO, MS-012AA) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source) + Tab | — |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant (Lead-Free PBF suffix) | — |
| 無鹵素 | [DATA_NEEDED: halogen-free status] | — |
| Avalanche Rated | Yes (100% avalanche tested) | Yes (fully characterized avalanche voltage) |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| Power Dissipation (PD) Max at TA=25C | — | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | — | 17 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| 工作溫度範圍 | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| Configuration | — | Single |
| Packaging | — | Tape & Reel (TRPBF suffix) |