IRFR3710ZTRPBF vs IRFR6215TRLPBF 比較
詳細並排比較 IRFR3710ZTRPBF 由 Infineon 與 IRFR6215TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR3710ZTRPBF | IRFR6215TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | -150 V |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| 工作接面溫度 | -55C to +175C | — |
| Technology | HEXFET (IR MOSFET) | HEXFET Power MOSFET (Fifth Generation) |
| 封裝 | TO-252AA (DPAK) | TO-252AA (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | -13 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 580 mOhm |
| Total Gate Charge (Qg) typ | — | 44 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Maximum Operating Junction Temperature | — | 175 C |
| MSL 等級 | — | 1 |