IRFS4227TRLPBF vs IPT022N10NF2SATMA1 比較
詳細並排比較 IRFS4227TRLPBF 由 Infineon 與 IPT022N10NF2SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFS4227TRLPBF | IPT022N10NF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) @ Tc = 25C | 62 A | — |
| Maximum Power Dissipation (PD) @ Tc = 25C | 330 W | — |
| On-Resistance RDS(on) max @ VGS = 10V | 26 mOhm | — |
| Total Gate Charge (Qg) | 70 nC | [DATA_NEEDED: Qg typical value] |
| Gate-to-Source Voltage (VGS) max | ±30 V | — |
| Configuration | Single with built-in diode | — |
| Case Connection | DRAIN | — |
| Technology | HEXFET, IR MOSFET | Trench MOSFET |
| 封裝 | D2PAK (TO-263), surface mount | PG-HSOF-8-10 (8 leads + tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -40C to +150C (TJ) | -55C to +175C |
| MSL 等級 | 1 (unlimited) | — |
| RoHS 狀態 | Compliant | Compliant |
| Key Application | PDP Sustain / Energy Recovery Switch | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | StrongIRFET 2 |
| Drain-Source Voltage (V(BR)DSS) | — | 100 V |
| Continuous Drain Current (Id) at Ta | — | 29 A |
| Continuous Drain Current (Id) at Tc | — | 236 A |
| Typical RDS(on) at VGS=10V | — | 2.2 mΩ |
| Power Dissipation at Ta | — | 3.8 W |
| Power Dissipation at Tc | — | 250 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |