IRLR3410TRPBF vs IRLR3410TRLPBF 比較
詳細並排比較 IRLR3410TRPBF 由 Infineon 與 IRLR3410TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR3410TRPBF | IRLR3410TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET, 5th generation) | HEXFET (5th generation) N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Power Dissipation (Pd) at Tc=25C | 79 W | — |
| On-Resistance RDS(on) max | 105 mOhm | — |
| Gate Threshold Voltage Vgs(th) | Logic-level (drive ~4.5V) | — |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC |
| 封裝 | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| 安裝類型 | Surface Mount | Surface Mount (tape and reel) |
| 工作溫度範圍 | -55C to +175C (junction) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| MSL 等級 | 1 (unlimited floor life at <30C/85% RH) | 1 |
| Drain Tab Connection | Tab electrically tied to Drain | — |
| Polarity | N-Channel enhancement mode | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLR3410TRLPBF |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| Pulsed Drain Current (IDM) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 105 mOhm |
| On-Resistance RDS(on) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) @ VGS=5V] |
| Gate-Source Threshold VGS(th) typ | — | 2.0 V |
| Gate Drive Level | — | Logic level (5V capable) |
| Power Dissipation (PD) at TC=25C | — | 79 W |
| 工作接面溫度 | — | -55C to +175C |
| RoHS Compliance | — | Compliant (Pb-free) |
| Avalanche Rated | — | Yes (UIS tested) |