IRLR7843TRPBF vs IRLR3114ZTRPBF 比較
詳細並排比較 IRLR7843TRPBF 由 Infineon 與 IRLR3114ZTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR7843TRPBF | IRLR3114ZTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 161 A | — |
| Power Dissipation (Pd) @ Tc=25C | 140 W | — |
| On-Resistance Rds(on) Max @ Vgs=10V | 3.3 mOhm | — |
| On-Resistance Rds(on) Max @ Vgs=4.5V | 4.5 mOhm (typ) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 34 nC | 40 nC @ VGS=4.5 V |
| Gate-to-Source Voltage Max | ±20 V | — |
| Avalanche Energy (Eas) | Fully characterized | — |
| 工作溫度範圍 | -55C to +175C | — |
| 封裝 | TO-252AA (DPAK) | TO-252AA (DPAK) surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET | HEXFET (IR MOSFET) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25 C) | — | 42 A |
| Continuous Drain Current (ID, Tc=100 C) | — | 30 A |
| Pulsed Drain Current (IDM) | — | 130 A |
| Gate-Source Voltage (VGS) max | — | 16 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V (typ) |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mOhm |
| On-Resistance RDS(on) @ VGS=4.5V | — | 4.9 mOhm |
| Input Capacitance (Ciss) | — | 3.81 nF |
| Power Dissipation (Pd, Tc=25 C) | — | 140 W |
| 工作接面溫度 | — | -55 C to +175 C |
| 腳位數 | — | 3 (2 + tab) |
| RoHS 狀態 | — | Compliant |