IS43TR16256AL-125KBL vs H5AN8G4NCJR-XXC 比較
詳細並排比較 IS43TR16256AL-125KBL 由 ISSI, Integrated Silicon Solution Inc 與 H5AN8G4NCJR-xxC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ 啟用中規格比較
| 參數 | IS43TR16256AL-125KBL | H5AN8G4NCJR-xxC |
|---|---|---|
| 品牌 | ISSI, Integrated Silicon Solution Inc | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | SDRAM - DDR3L | DDR4 SDRAM |
| 記憶體容量 | 4Gbit (256M x 16) | — |
| 介面 | Parallel | — |
| Clock Frequency | 800 MHz | — |
| Access Time | 20 ns | — |
| 供應電壓 | 1.35V (backward compatible to 1.5V) | 1.2V |
| 封裝 | 96-TWBGA (9x13mm) | FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0°C ~ 95°C | [DATA_NEEDED: operating temperature range] |
| Memory Format | DRAM | — |
| Technology | SDRAM - DDR3L | — |
| 資料速率 | 1600 Mbps | [DATA_NEEDED: speed grade from xxC suffix] |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | Yes |
| Number of Terminals | 96 | — |
| Density | — | 8Gb |
| 組織 | — | x4 (H5AN8G4NCJR) |
| RoHS | — | Compliant |
| 無鹵素 | — | Yes |
| Prefetch | — | 8-bit |
| Burst Length | — | 8 (BL8) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes |