ISC024N08NM7ATMA1 vs ISC037N12NM6ATMA1 比較
詳細並排比較 ISC024N08NM7ATMA1 由 Infineon 與 ISC037N12NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC024N08NM7ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) at Ta=25C | 24 A | 19.2 A |
| Continuous Drain Current (Id) at Tc | 167 A | — |
| Power Dissipation (Pd) at Ta=25C | 3 W | — |
| Power Dissipation (Pd) at Tc | 150 W | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 / 外殼 | PG-TDSON-8 (SSO8) | — |
| 工作溫度範圍 | -55 C to +175 C | -55C to +175C (junction) |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) typical value] | — |
| Total Gate Charge Qg (typ) | [DATA_NEEDED: total gate charge] | — |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | — | 120 V |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| 封裝 | — | PG-TDSON-8 FL (SuperSO8) |
| Avalanche Energy Rated | — | Yes (single-pulse) |